A study on the minority carrier diffusion length in n-type GaN films

The minority carrier diffusion length of n-type GaN films grown by metalorganic chemical vapor deposition (MOCVD) has been studied by measuring the surface photovoltaic (PV) spectra. It was found that the minority carrier diffusion length of undoped n-type GaN is considerably larger than that in lightly Si-doped GaN. However, the data suggested that the dislocation and electron concentration appear not to be responsible for the minority carrier diffusion length. It is suggested that Si doping plays an important role in decreasing the minority carrier diffusion length.

Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells

Thermal annealing of GaInAs/GaNAs quantum wells (QWs) as well as other nitrogen- and indium-contained QW structures grown by molecular beam epitaxy and its effect on optical properties are investigated. The photoluminescence (PL) and photovoltaic (PV) spectra of annealed GaInAs/GaNAs QWs show that the luminescence properties become degraded due to the N diffusion from the GaNAs barrier layers to the GaInAs well layer. Meantime, the annealing-induced blueshift of the PL peak in this QW system is mainly induced by the change of In distribution, suggesting that the In reorganization is greatly assisted by the N-induced defects. The elucidation of annealing effect in GaInAs/GaNAs QW samples is helpful for a better understanding to the annealing effect in the GaInNAs/GaAs QWs. (C) 2003 Elsevier Science B.V. All rights reserved.

Calculation of the hourly and daily radiation incident on three step tracking planes

Mathematical formulas for estimating the hourly and daily radiation incident on planes of azimuth three step tracking and hour angle three step tracking have been derived in this paper. Based on the hourly solar radiation data of an average day in each month at Er-Lian-Hao-Te city, the hourly and monthly radiation received by planes of these two kinds of tracking have been calculated. The results show that in this district, one axis azimuth three step tracking and hour angle three step tracking could, respectively, obtain 66.5% and 63.3% higher radiation than that on the horizontal surface all year. Moreover, a two axis azimuth three step tracking plane could receive 72% more radiation than the horizontal surface. (C) 2002 Elsevier Science Ltd. All rights reserved.

Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots

The ground and excited state excitonic transitions of stacked InAs self-organized quantum dots (QDs) in a laser diode structure are studied. The interband absorption transitions of QDs are investigated by non-destructive PV spectra, indicating that the strongest absorption is related to the excited states with a high density and coincides with the photon energy of lasing emission. The temperature and excitation (electric injection) intensity dependences of photoluminescence and electroluminescence indicate the influence of state filling effect on the luminescence of threefold stacked QDs. The results indicate that different coupling channels exist between electronic states in both vertical and lateral directions.

The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy

The surface photovoltage (SPV) effect induced by the defect states in semi-insulating (SI) GaAs was studied. The PV response below the band edge was measured at room temperature with a de optical biasing. The spectra were found to be strongly dependent on the surface recombination and were attributed to formation of the carrier concentration gradient near the surface region, showing that SPV is a very sensitive and nondestructive technique for characterizing the surface quality of the SI-GaAs wafers.

Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making 3-5 um photovoltaic infrared (IR) detectors with a peak detectivity of 5 x 10(11) cm Hz(1/2)/W at 80 K. Double crystal X-ray diffraction is combined with synchrotron radiation X-ray analysis to determine successfully the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spectra of the linear array of the detectors are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region. The spectral response of the IR photocurrent of the devices is also measured and compared with the temperature dependent IR absorption of the DBQW samples in order to get a better understanding of the bias-controlled optical and transport behavior of the detector photoresponse and thus to optimize the detector performance. (C) 1999 Elsevier Science Ltd. All rights reserved.

Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots

We present a detailed study of the interband excitonic transitions of InAs/GaAs self-organized quantum dots (QDs) based on photovoltage (PV) photoreflectance (PR) and photoluminescence (PL) spectroscopy. At room temperature, the interband absorption transitions of QDs have been observed by using PV spectrum, which clearly exhibits four well-resolved excitonic absorption peaks. The absorption line shape is Gaussian-like. Furthermore, the corresponding excitonic transitions are also observed in PR experiment at 77 K. The first derivative of a Gaussian profile can fit the experimental data well. (C) 1998 American Institute of Physics. [S0003-6951(98)00743-8]

双面太阳电池垂直安装发电性能的测试

双面太阳电池是一种非常规太阳电池。本文通过建立光伏组件-控制器-蓄电池-负载试验系统，对日立公司双面受光单晶硅太阳电池组件分别在东西和南北朝向情况下垂直地面安装时的功率输出特性进行了测试和分析。根据应用测试结果，总结了双面受光太阳电池的应用优缺点和可能的应用方式。

黄土丘陵区免耕条件下两种土壤酶活性变化

为了确定合理环保的耕作制度,2007~2008安塞田间定位试验黄土丘陵旱作农区大豆(Glycine maxL)、玉米(Zea maysL)、红小豆(Semen Phaseoli)、马铃薯(Solanum tuberosumLinn.)在翻耕化肥(CF)、翻耕有机肥(CM)、翻耕无肥(CN)、免耕化肥(NF)、免耕有机肥(NM)、免耕无肥(NN)等水平下的农田土壤脲酶、蔗糖酶活性。结果表明:在作物花期,大豆、玉米土壤脲酶活性较高,蔗糖酶活性较低,而红小豆、马铃薯则与之相反,差异极显著。到作物收获后,玉米土壤脲酶、蔗糖酶活性增高,增幅在83%以上,而马铃薯、红小豆、大豆三种作物土壤脲酶活性降低,降幅在10%以上,蔗糖酶活性增强,增幅在40%以上。从花期到收获后,免耕降低了土壤脲酶活性,提高了土壤蔗糖酶活性,在黄土丘陵沟壑旱作农区两种土壤酶活性表现较优的作物为大豆、玉米,较优的处理为NM玉米、NF大豆,其田间环保效应为:作物生长期间两种酶活性比较高,收获后两种酶活性则降低,有利于提高作物生长期土壤肥效利用率,减少作物收获后温室气体的排放。

陕北黄土丘陵沟壑区水土保持耕作及施肥下农田土壤种子库特征

为了探明多年免耕下农田恶性杂草发生的机理,提高保护性耕作下作物对农田恶性杂草持久稳定的抑制效果,依据陕西安塞田间4a的定位试验,采用小区调查取样和室内实验相结合的方法,从物种组成、密度特征、多样性以及相似性特征等方面,研究了黄土丘陵旱作农区大豆(Glycine max)、玉米(Zea mays)、红小豆(Semen Phaseoli)、马铃薯(Solanum tuberosum)在翻耕化肥(CF)、翻耕有机肥(CM)、翻耕无肥(CN)、免耕化肥(NF)、免耕有机肥(NM)、免耕无肥(NN)等水平下的农田土壤种子库。结果表明:(1)4种作物24种土样中共萌发出12个物种1965株幼苗,隶属于7科12属。1年生杂草占94%,棒头草(fugax nees ex steud)、苋菜(Acalypha australis)、马唐(Digitaria sanguinalis)、早熟禾(Poasphondylodes)为优势种,占87%。(2)在0～20cm土层不同处理间,土壤种子库的密度变动于(282.9±63.4)～(7482.5±1078.3)粒.m-2,其中,红小豆小区>马铃薯小区>大豆小区>玉米小区;翻耕小区>免...