Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots


Autoria(s): Sun BQ; Lu ZD; Jiang DS; Wu JQ; Xu ZY; Wang YQ; Wang JN; Ge WK
Data(s)

1998

Resumo

We present a detailed study of the interband excitonic transitions of InAs/GaAs self-organized quantum dots (QDs) based on photovoltage (PV) photoreflectance (PR) and photoluminescence (PL) spectroscopy. At room temperature, the interband absorption transitions of QDs have been observed by using PV spectrum, which clearly exhibits four well-resolved excitonic absorption peaks. The absorption line shape is Gaussian-like. Furthermore, the corresponding excitonic transitions are also observed in PR experiment at 77 K. The first derivative of a Gaussian profile can fit the experimental data well. (C) 1998 American Institute of Physics. [S0003-6951(98)00743-8]

Identificador

http://ir.semi.ac.cn/handle/172111/13078

http://www.irgrid.ac.cn/handle/1471x/65509

Idioma(s)

英语

Fonte

Sun BQ; Lu ZD; Jiang DS; Wu JQ; Xu ZY; Wang YQ; Wang JN; Ge WK .Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots ,APPLIED PHYSICS LETTERS,1998,73(18):2657-2659

Palavras-Chave #半导体物理 #CARRIER RELAXATION #EXCITED-STATES #ELECTROREFLECTANCE
Tipo

期刊论文