Climatological observations from ship logbooks between 1750 and 1854 (release 2.1)

The Climatological Database for the World's Oceans: 1750-1854 (CLIWOC) project, which concluded in 2004, abstracted more than 280,000 daily weather observations from ships' logbooks from British, Dutch, French, and Spanish naval vessels engaged in imperial business in the eighteenth and nineteenth centuries. These data, now compiled into a database, provide valuable information for the reconstruction of oceanic wind field patterns for this key period that precedes the time in which anthropogenic influences on climate became evident. These reconstructions, in turn, provide evidence for such phenomena as the El Niño-Southern Oscillation and the North Atlantic Oscillation. Of equal importance is the finding that the CLIWOC database the first coordinated attempt to harness the scientific potential of this resource represents less than 10 percent of the volume of data currently known to reside in this important but hitherto neglected source.

Discarge compilation from The Global River Discharge (RivDIS) Project

The Global River Discharge (RivDIS) data set contains monthly discharge measurements for 1018 stations located throughout the world. The period of record varies widely from station to station, with a mean of 21.5 years. These data were digitized from published UNESCO archives by Charles Voromarty, Balaze Fekete, and B.A. Tucker of the Complex Systems Research Center (CSRC) at the University of New Hampshire. River discharge is typically measured through the use of a rating curve that relates local water level height to discharge. This rating curve is used to estimate discharge from the observed water level. The rating curves are periodically rechecked and recalibrated through on-site measurement of discharge and river stage.

Price Formation and Real Estate Characteristics Residential Real Estate, Lisbon - Portugal

Análisis del proceso de formación de precios en el mercado residencial de Lisboa desde el punto de vista de la eliminación de los aspectos subjetivos de la apreciación por el tasador de las características de los inmuebles

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-V-compounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). In these cases, a general task must be accomplished successfully, i.e. the growth of polar materials on non-polar substrates and, beyond that, very specific variations such as the individual interface formation and the atomic step structure, have to be controlled. Above all, the method of choice to grow industrial relevant high-performance device structures is MOVPE, not normally compatible with surface and interface sensitive characterization tools, which are commonly based on ultrahigh vacuum (UHV) ambients. A dedicated sample transfer system from MOVPE environment to UHV enabled us to benchmark the optical in-situ spectra with results from various surfaces science instruments without considering disruptive contaminants. X-ray photoelectron spectroscopy (XPS) provided direct observation of different terminations such as arsenic and phosphorous and verified oxide removal under various specific process parameters. Absorption lines in Fourier-transform infrared (FTIR) spectra were used to identify specific stretch modes of coupled hydrides and the polarization dependence of the anti-symmetric stretch modes distinguished different dimer orientations. Scanning tunnelling microscopy (STM) studied the atomic arrangement of dimers and steps and tip-induced H-desorption proved the saturation of dangling bonds after preparati- n. In-situ RAS was employed to display details transiently such as the presence of H on the surface at lower temperatures (T <; 800°C) and the absence of Si-H bonds at elevated annealing temperature and also surface terminations. Ge buffer growth by the use of GeH4 enables the preparation of smooth surfaces and leads to a more pronounced amplitude of the features in the spectra which indicates improvements of the surface quality.

Optimizing Bottom Subcells for III-V-on-Si MultiJunction Solar Cells

Dual-junction solar cells formed by a GaAsP or GaInP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. Such integration would offer a cost breakthrough for photovoltaic technology, unifying the low cost of silicon and the efficiency potential of III-V multijunction solar cells. In this study, we analyze several factors influencing the performance of the bottom subcell of this dual-junction, namely, 1) the formation of the emitter as a result of the phosphorus diffusion that takes place during the prenucleation temperature ramp and during the growth of the III-V layers; 2) the degradation in surface morphology during diffusion; and 3) the quality needed for the passivation provided by the GaP layer on the emitter.

Integration of III-V materials on Silicon Substrates for Multi-junction Solar Cell Applications

The work presented here aims to reduce the cost of multijunction solar cell technology by developing ways to manufacture them on cheap substrates such as silicon. In particular, our main objective is the growth of III-V semiconductors on silicon substrates for photovoltaic applications. The goal is to create a GaAsP/Si virtual substrates onto which other III-V cells could be integrated with an interesting efficiency potential. This technology involves several challenges due to the difficulty of growing III-V materials on silicon. In this paper, our first work done aimed at developing such structure is presented. It was focused on the development of phosphorus diffusion models on silicon and on the preparation of an optimal silicon surface to grow on it III-V materials.

XPS as Characterization Tool for PV: From the Substrate to Complete III-V Multijunction Solar Cells

This contribution aims to illustrate the potential of the X-ray photoelectron spectroscopy (XPS) technique as a tool to analyze different parts of a solar cell (surface state, heterointerfaces, profile composition of ohmic contacts, etc). Here, the analysis is specifically applied to III-V multijunction solar cells used in concentrator systems. The information provided from such XPS analysis has helped to understand the physico-chemical nature of these surfaces and interfaces, and thus has guided the technological process in order to improve the solar cell performance.

Design, manufacturing and measurements of a metal-less V-groove RXI collimator

A metal-less RXI collimator has been designed. Unlike to the conventional RXI collimators, whose back surface and central part of the front surface have to be metalized, this collimator does not include any mirrored surface. The back surface is designed as a grooved surface providing two TIR reflections for all rays impinging on it. The main advantage of the presented design is lower manufacturing cost since there is no need for the expensive process of metalization. Also, unlike to the conventional RXI collimators this design performs good colour mixing. The first prototype of V-groove RXI collimator has been made of PMMA by direct cutting using a five axis diamond turning machine. The experimental measurements of the first prototype are presented.

Ordenanzas de la Ilustre Universidad y Casa de Contratación de la M.N. y M.L. Villa de Bilbao : (insertos sus reales privilegios), aprobadas y confirmadas por el Rey nuestro Señor Don Phelipe Quinto (que Dios guarde) año de 1737.

Sign.: []2, A-Z4, 2A-Z4, 3A-3H4, []1

Demostración del sentido verdadero de las autoridades de que se vale el Doctor Don Juan Antonio de Llorente, canónigo de la Catedral de Toledo, en el tomo I de "Las noticias históricas de las tres provincias vascongadas" : y de lo que en verdad resulta de los historiadores que cita, con respecto solamente al Muy Noble y Muy Leal Señorío de Vizcaya / por Francisco de Aranguren y Sobrado.

Digitalización Vitoria-Gasteiz Archivos y Bibliotecas Abril 1994 18-6

Repetitio. ru. [et] ca. p[er] v[est]ras de donationib[us] int[er] virum [et] vxorem / edita a Joa[n]ne lupi de palacios ruuios ...

Sign.: []2, a-z8, [et]8, [cum]8, [rum]8, 2a-2d8, 2e-2f6, A10, a8, b10

Las quatro partes enteras dela Cronica de España, que mando componer el Serenissimo rey don Alonso llamado el sabio : donde se contienen los acontescimientos y hazañas mayores y mas señaladas que suçedieron en España, desde su primera poblaçion hasta casi

Pie de imp. tomado del colofón

Impact of MOVPE Environment on Silicon Substrates for III-V-on-Si Multijunction Solar Cells

With the final goal of integrating III-V materials to silicon for tandem solar cells, the influence of the metal-organic vapor phase epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell device. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. The effect of the formation of the emitter by phosphorus diffusion has also been evaluated.

Urtearen domeca guztiñetaraco berbaldiac / Andres Iturzaetac eta Juan Antonio de Unzuetac Bizcaico eusqueran ibiniac.

I. Urtearen domeca guztiñetaraco berbaldiac