999 resultados para Beam profiling


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Based on the perturbative series representation of a complex-source-point spherical wave an expression for cylindrically symmetrical complex-argument Laguerre-Gauss beams of radial order n is derived. This description acquires the accuracy up to any order of diffraction angle, and its first three corrected terms are in accordance with those given by Seshadri [Opt. Lett. 27, 1872 (2002)] based on the virtual source method. Numerical results show that on the beam axis the number of orders of nonvanishing nonparaxial corrections is equal to n. Meanwhile a higher radial mode number n leads to a smaller convergent domain of radius. (C) 2008 Optical Society of America.

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An accurate description of a radially polarized fundamental Gaussian beam is presented on the basis of complex-source-point spherical waves (CSPSWs). In contrast to other descriptions based on the perturbative Lax series, the expressions for the electromagnetic field components of this description have explicit and simple mathematical forms. Numerical calculations show that both paraxial and fifth-order corrected beam descriptions have large relative error when the diffraction angle is large, while the accurate description based on the CSPSW approach proposed here can give field expressions which satisfy Maxwell's equations with great accuracy.

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Anisotropic gratings are recorded on bacteriorhodopsin films by two parallelly polarized beams, and the effect of the polarization orientation of the reconstructing beam on the diffraction efficiency kinetics is studied. A theoretical model for the diffraction efficiency kinetics of the anisotropic grating is developed by combining Jones-matrix and photochromic two-state theory. It is found that the polarization azimuth of the reconstructing beam produces a cosine modulation on the kinetics of the diffraction efficiency, being positive at the peak efficiency and negative for steady state. By adding auxiliary violet light during grating formation, the saturation of the grating can be restrained. As a result, the negative cosine modulation for the steady-state diffraction efficiency changes to a positive one. In addition, the steady-state diffraction efficiency is increased appreciably for all reconstructing polarization orientations. (c) 2008 Optical Society of America.

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The same-beam VLBI observations of Rstar and Vstar, which were two small satellites of Japanese lunar mission, SELENE, were successfully performed by using Shanghai and Urumqi 25-m telescopes. When the separation angle between Rstar and Vstar was less than 0.1 deg, the differential phase delay of the X-band signals between Rstar and Vstar on Shanghai-Urumqi baseline was obtained with a very small error of 0.15 mm rms, which was reduced by 1-2 order compared with the former VLBI results. When the separation angle was less than 0.56 deg, the differential phase delay of the S-band signals was also obtained with a very small error of several mm rms. The orbit determination for Rstar and Vstar was performed, and the accuracy was improved to a level of several meters by using VLBI and Doppler data. The high-accuracy same-beam differential VLBI technique is very useful in orbit determination for a spacecraft, and will be used in orbit determination for Mars missions of China Yinghuo-1 and Russia Phobos-grunt.

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GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.

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Using gas-source molecular beam epitaxy, we have obtained high-quality GaInP and (AlGa)InP epilayers lattice-matched to (100) GaAs substrates. All grown layers exhibited mirror-like surfaces. For a 1.7 mum thick Ga0.5In0.5P film, the Hall electron mobility was 3400 and 30,000 CM2/V. s at 300 and 77 K, respectively. The luminescence wavelength of (AlxGa1-x)InP samples ranged from 680 nm (for GaInP) to 590 nm (for AlInP) at room temperature, and from 644 to 513 nm at 77 K. The multiple quantum well (MQW) structure with well width of 40 angstrom showed strong luminescence intensity with wavelength of 647 nm (300 K) or 622 nm (80 K). The satellite peaks can be detected in double-crystal X-ray (DCXR) diffraction measurements of the MQW samples, which indicates the perfect structural periodicity.