Transport processes in one component plasmas using Landau equation

A system of transport equations have been obtained for plasma of electrons and having a background of positive ions in the presence of an electric and magnetic field. The starting kinetic equation is the well-known Landau kinetic equation. The distribution function of the kinetic equation has been expanded in powers of generalized Hermite polynomials and following Grad, a consistent set of transport equations have been obtained. The expressions for viscosity and heat conductivity have been deduced from the transport equation.

Elerctron Transport Coefficients in N2 in Crossed Fields at Low E/p

The numerical solutions of Boltzmann transpott equation for the energy distribution of electrons moving in crossed fields in nitrogen have been obtained for 100 ÿ E/p ÿ 1000 V M-1 Torr-1 and for 0ÿ B/p ÿ 0.02 Tesla Torr-1 using the concept of energy dependent effective field intensity. From the derived distribution functions the electron mean energy, the tranaverse and perpendicular drift velocities and the averaged effective field intensity (Eavef) which signifies the average field intensity experienced by electron swarms in E àB field have been derived. The maximum difference between the electron mean energy for a given E ÃÂB field and that corresponding to Eavef/p (p is the gas pressure) is found to be within ñ3.5%.

Structural and dielectric behavior of pulsed laser ablated Sr(0.6)Ca(0.4)TiO(3) thin film and asymmetric multilayer of SrTiO(3) and CaTiO(3)

Homogeneous thin films of Sr(0.6)Ca(0.4)TiO(3) (SCT40) and asymmetric multilayer of SrTiO(3) (STO) and CaTiO(3) (CTO) were fabricated on Pt/Ti/SiO(2)/Si substrates by using pulsed laser deposition technique. The electrical behavior of films was observed within a temperature range of 153 K-373 K. A feeble dielectric peak of SCT40 thin film at 273 K is justified as paraelectric to antiferroelectric phase transition. Moreover, the Curie-Weiss temperature, determined from the epsilon'(T) data above the transition temperature is found to be negative. Using Landau theory, the negative Curie-Weiss temperature is interpreted in terms of an antiferroelectric transition. The asymmetric multilayer exhibits a broad dielectric peak at 273 K. and is attributed to interdiffusion at several interfaces of multilayer. The average dielectric constants for homogeneous Sr(0.6)Ca(0.4)TiO(3) films (similar to 650) and asymmetric multilayered films (similar to 350) at room temperature are recognized as a consequence of grain size effect. Small frequency dispersion in the real part of the dielectric constants and relatively low dielectric losses for both cases ensure high quality of the films applicable for next generation integrated devices. (C) 2011 Elsevier B.V. All rights reserved.

Macromolecular Transport Through Porous Arterial Walls

Arteries are heterogeneous, composite structures that undergo large cyclic deformations during blood transport. Presence, build-up and consequent rupture of blockages in blood vessels, called atherosclerotic plaques, lead to disruption in the blood flow that can eventually be fatal. Abnormal lipid profile and hypertension are the main risk factors for plaque progression. Treatments span from pharmacological methods, to minimally invasive balloon angioplasty and stent procedures, and finally to surgical alternatives. There is a need to understand arterial disease progression and devise methods to detect, control, treat and manage arterial disease through early intervention. Local delivery through drug eluting stents also provide an attractive option for maintaining vessel integrity and restoring blood flow while releasing controlled amount of drug to reduce and alleviate symptoms. Development of drug eluting stents is hence interesting albeit challenging because it requires an integration of knowledge of mechanical properties with material transport of drug through the arterial wall to produce a desired biochemical effect. Although experimental models are useful in studying such complex multivariate phenomena, numerical models of mass transport in the vessel have proved immensely useful to understand and delineate complex interactions between chemical species, physical parameters and biological variables. The goals of this review are to summarize literature based on studies of mass transport involving low density lipoproteins in the arterial wall. We also discuss numerical models of drug elution from stents in layered and porous arterial walls that provide a unique platform that can be exploited for the design of novel drug eluting stents.

Anisotropic electrical transport properties of poly(methyl methacrylate) infiltrated aligned carbon nanotube mats

We report the electrical anisotropic transport properties of poly(methyl methacrylate) infiltrated aligned carbon nanotube mats. The anisotropy in the resistivity increases with decreasing temperature and the conduction mechanism in the parallel and perpendicular direction is different. Magnetoresistance (MR) studies also suggest anisotropic behavior of the infiltrated mats. Though MR is negative, an upturn is observed when the magnetic field is increased. This is due to the interplay of electron weak localization and electron-electron interactions mechanisms. Overall, infiltrated carbon nanotube mat is a good candidate for anisotropically conductive polymer composite and a simple fabrication method has been reported. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675873]

Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN NRs have sharp peaks E(2)(high) at 490.2 cm(-1) and A(1)(LO) at 591 cm(-1). The current transport mechanism of the NRs is limited by three types of mechanisms depending on applied bias voltages. The electrical transport properties of the device were studied in the range of 80 to 450 K. The faster rise and decay time indicate that the InN NRs/n-Si heterojunction is highly sensitive to IR light.

Real-time density matrix renormalization group dynamics of spin and charge transport in push-pull polyenes and related systems

In this paper we investigate the effect of terminal substituents on the dynamics of spin and charge transport in donor-acceptor substituted polyenes [D-(CH)(x)-A] chains, also known as push-pull polyenes. We employ a long-range correlated model Hamiltonian for the D-(CH)(x)-A system, and time-dependent density matrix renormalization group technique for time propagating the wave packet obtained by injecting a hole at a terminal site, in the ground state of the system. Our studies reveal that the end groups do not affect spin and charge velocities in any significant way, but change the amount of charge transported. We have compared these push-pull systems with donor-acceptor substituted polymethine imine (PMI), D-(CHN)(x)-A, systems in which besides electron affinities, the nature of p(z) orbitals in conjugation also alternate from site to site. We note that spin and charge dynamics in the PMIs are very different from that observed in the case of push-pull polyenes, and within the time scale of our studies, transport of spin and charge leads to the formation of a ``quasi-static'' state.

Transport, optical and magnetotransport properties of hetero-epitaxial InAsxSb1−x/GaAs(x0.06) and bulk View the MathML source crystals: experiment and theoretical analysis

We briefly review the growth and structural properties of View the MathML source bulk single crystals and View the MathML source epitaxial films grown on semi-insulating GaAs substrates. Temperature-dependent transport measurements on these samples are then correlated with the information obtained from structural (XRD, TEM, SEM) and optical (FTIR absorption) investigations. The temperature dependence of mobility and the Hall coefficient are theoretically modelled by exactly solving the linearized Boltzmann transport equation by inversion of the collision matrix and the relative role of various scattering mechanisms in limiting the low temperature and View the MathML source mobility is estimated. Finally, the first observation of Shubnikov oscillations in InAsSb is discussed.

Universalities in vortex transport at the melting transition

We consider the jump in resistance at the melting transition, which is experimentally observed to be constant, independent of magnetic field (vortex density). We present an explanation of this effect based on vortex cuttings, and universalities of the structure factor at the freezing transition (the Hansen-Verlet criterion).

Efficient Runtime Detection and Toleration of Asymmetric Races

We introduce ToleRace, a runtime system that allows programs to detect and even tolerate asymmetric data races. Asymmetric races are race conditions where one thread correctly acquires and releases a lock for a shared variable while another thread improperly accesses the same variable. ToleRace provides approximate isolation in the critical sections of lock-based parallel programs by creating a local copy of each shared variable when entering a critical section, operating on the local copies, and propagating the appropriate copies upon leaving the critical section. We start by characterizing all possible interleavings that can cause races and precisely describe the effect of ToleRace in each case. Then, we study the theoretical aspects of an oracle that knows exactly what type of interleaving has occurred. Finally, we present software implementations of ToleRace and evaluate them on multithreaded applications from the SPLASH2 and PARSEC suites.

Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas

Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic, and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I (V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I (V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.

Ion Transport in Liquid Salt Solutions with Oxide Dispersions:``Soggy Sand'' Electrolytes

``Soggy sand'' electrolyte, which essentially consists of oxide dispersions in nonaqueous liquid salt solutions, comprises an important class of soft matter electrolytes. The ion transport mechanism of soggy sand electrolyte is complex. The configuration of particles in the liquid solution has been observed to depend in a nontrivial manner on various parameters related to the oxide (concentration, size, surface chemistry) and solvent (dielectric constant, viscosity) as well as time. The state of the particles in solution not only affects ionic conductivity but also effectively the mechanical and electrochemical properties of the solid liquid composite. Apart from comprehensive understanding of the underlying phenomena that govern ion transport, which will benefit design of better electrolytes, the problem has far-reaching implications in diverse fields such as catalysis, colloid chemistry, and biotechnology.

Pt/CdTe/Pt asymmetric nano-Schottky diodes from colloidal quantum dots

We have fabricated nano-Schottky diodes of CdTe QDs with platinum metal electrodes in metal-semiconductor-metal planar configuration by drop-casting. The observed high value of ideality factor (13.3) of the diode was possibly due to the presence of defects in colloidal QDs. We observed asymmetry and non-linear nature of I-V characteristics between forward and reverse directions, which has been explained in terms of size distributions of quantum dots due to coffee ring effect. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. doi:10.1063/1.3669408]

Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions

GaN/Si3N4/n-Si and InN/Si3N4/n-Si heterojunctions (HJs) were fabricated using plasma-assisted molecular beam epitaxy for a comparison study. Single-crystalline wurtzite structures of GaN and InN epilayers were confirmed by high-resolution X-ray diffraction and thickness of ultrathin Si3N4 layer was measured by transmission electron microscopy. n-GaN/Si3N4/n-Si HJs show diode-like rectifying current-voltage (I-V) characteristic, while n-InN/Si3N4/n-Si HJs show symmetric nonlinear I-V behavior. The I-V characteristics of both HJs were discussed in terms of the band diagram of HJs and the carrier transport mechanism. The activation energies of carrier conduction were estimated to be similar to 29 meV for GaN/Si3N4/Si and similar to 95 meV for InN/Si3N4/Si HJs. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim