Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas
Data(s) |
23/02/2012
|
---|---|
Resumo |
Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic, and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I (V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I (V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena. |
Formato |
application/pdf |
Identificador |
http://eprints.iisc.ernet.in/44016/1/Transport_through.pdf Goswami, Srijit and Aamir, MA and Siegert, Christoph and Pepper, Michael and Farrer, Ian and Ritchie, David A and Ghosh, Arindam (2012) Transport through an electrostatically defined quantum dot lattice in a two-dimensional electron gas. In: Physical Review B: Condensed Matter and Materials Physics, 85 (7). 075427-1-075427-5. |
Publicador |
American Physical Society |
Relação |
http://prb.aps.org/abstract/PRB/v85/i7/e075427 http://eprints.iisc.ernet.in/44016/ |
Palavras-Chave | #Physics |
Tipo |
Journal Article PeerReviewed |