Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions


Autoria(s): Kumar, Mahesh; Roul, Basanta; Bhat, Thirumaleshwara N; Rajpalke, Mohana K; Kalghatgi, AT; Krupanidhi, SB
Data(s)

01/05/2012

Resumo

GaN/Si3N4/n-Si and InN/Si3N4/n-Si heterojunctions (HJs) were fabricated using plasma-assisted molecular beam epitaxy for a comparison study. Single-crystalline wurtzite structures of GaN and InN epilayers were confirmed by high-resolution X-ray diffraction and thickness of ultrathin Si3N4 layer was measured by transmission electron microscopy. n-GaN/Si3N4/n-Si HJs show diode-like rectifying current-voltage (I-V) characteristic, while n-InN/Si3N4/n-Si HJs show symmetric nonlinear I-V behavior. The I-V characteristics of both HJs were discussed in terms of the band diagram of HJs and the carrier transport mechanism. The activation energies of carrier conduction were estimated to be similar to 29 meV for GaN/Si3N4/Si and similar to 95 meV for InN/Si3N4/Si HJs. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/44597/1/PHY_%20STA_%20SOL_%20A-APP_%20AND_%20MAT_%20SCI_%20209_5_994-997_%202012.pdf

Kumar, Mahesh and Roul, Basanta and Bhat, Thirumaleshwara N and Rajpalke, Mohana K and Kalghatgi, AT and Krupanidhi, SB (2012) Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions. In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209 (5). pp. 994-997.

Publicador

Wiley

Relação

http://dx.doi.org/10.1002/pssa.201127721

http://eprints.iisc.ernet.in/44597/

Palavras-Chave #Materials Research Centre
Tipo

Journal Article

PeerReviewed