Optical properties of organo-soluble polyimide thin films and their applications in liquid crystal displays

Three organo-soluble polyimide powders have been synthesized. Their imidization was verified by Fourier transform infrared (FTIR) and thermal gravimetric analysis (TGA) techniques. The amorphous morphology of their thin films were confirmed by X-ray diffraction. Polyimide thin films were prepared by solution casting or spin coating. UV-visible transmission spectra of thin films revealed that they are almost transparent in the range of visible light. With in-plane orientation, revealed by FTIR spectra, negative birefringence (Delta n) of thin films were observed, and refractive indices of the thin films along the film plane (n(TE)) and normal to the plane (n(TM)) were measured by a prism coupler. Because of negative birefringence of the thin films, they tan be substituted for the compensation films for twisted nematic liquid crystal displays (TN-LCDs) to extend their viewing angles. In this paper, a 90 degrees C TN-LCD and 120 degrees C TN-LCD were taken as examples to show the compensation effect of thin films of a qualified polyimide. (C) 1998 Elsevier Science S.A. All rights reserved.

Optical anisotropy of flexible polyimide thin films

Optical anisotropy of thin films of an organo-soluble flexible polyimide based on 1,4-bis(3,4-dicarboxyphenoxy) benzene dianhydride (HQDPA) and 2,2-dimethyl-4,4'-methylene dianiline (DMMDA) was detected by a prism-coupler technique. A mechanism is proposed, based on the model of gel film collapse. The degrees of optical anisotropy of the thin films were evaluated via the level of negative birefringence. The residual solvent in the films lessens the levels of negative birefringence so that the residual solvent must be evacuated. The levels of negative birefringence are independent on the solid content of the initial solution, but dependent on the thickness of the films. For a film of 16 mu m thick, zero birefringence was achieved, postulated from the dependence of negative birefringence on the thickness of thin films. The relationship between the optical anisotropy and solution properties shows that the degrees of optical anisotropy of thin films on the same scale of thickness depend on macromolecular sizes in their dilute solutions.

Correlation between chain conformations and optical anisotropy of thin films of an organo-soluble polyimide

An organo-soluble polyimide was successfully synthesized by two step polycondensation accompanied with chemical imidization. Optical anisotropy of thin films was detected by a prism-coupler technique. The results showed that the optical anisotropic properties of thin films prepared from solutions in different solvents depend on the solution properties. It is concluded that the more expanded the chain conformation in solution, the larger the negative birefringence of thin films. (C) 1997 Elsevier Science Ltd.

Study of molecular order in organo-soluble polyimide thin films

The changes in refractive indices (n(TE) and n(TM)) in a direction normal to the plane of thin films of an organo-soluble polyimide based on 1,4-bis(3,4-dicarboxyphenoxy) benzene dianhydride and 2,2'-dimethyl-4,4'-methylene dianiline were measured by a prism coupler. The results implied that the molecules near the substrate-polyimide interface were much ordered, while those near the polyimide-air interface were less ordered, judging from the variation in the level of negative birefringence with the depth of the films. The molecules are more condensed near the substrate surface, as seen by the average refractive index increasing from the polyimide-air interface to the substrate-polyimide interface, which implies that the condensed states of polyimide molecules change gradually in the depth direction. (C) 1997 Elsevier Science B.V.

Polyimide thin films as compensators for liquid crystal displays

The disadvantages of NW-TN-LCD (normally white twisted nematic liquid crystal display) are discussed. The reason that the negative birefringent polyimide thin films are used to compensate NW-TN-LCD to decrease off-axis leakage, improve contrast ratios and enlarge viewing angeles is explained. A certain polyimide thin film is taken as an example to show the compensation effect on NW-TN-LCD. (C) 1997 by John Wiley & Sons, Ltd.

Compensation effect of polyimide thin films on normally white twisted nematic liquid crystal displays

The disadvantages of Normally White Twisted Nematic Liquid Crystal Display (NW-TN-LCD) were discussed. The reason that the negative birefringent polyimide thin films were used to compensate NW-TN-LCD to decrease off-axis leakage, improve contrast ratios and enlarge viewing angles was explained in this paper. A certain polyimide thin film was taken as an example to show compensation effect on NW-TN-LCD.

The fabrication of dipped CdS and sputtered ITO thin films for photovoltaic solar cells

Stable bilayer thin films of indium tin oxide (ITO) on CdS and CdS on ITO were formed for the window material of solar cells by chemical bath and sputtering methods. Scanning electron microscopy and X-ray diffraction studies have shown that both the ITO and CdS films are continuous, homogeneous, with high compactness. Measurement of the CdS film thickness across the 2 x 4 cm(2) reveals the good uniformity of these films. Four-point probe measurements show that the resistivity of a CdS film on an ITO surface is much better than that of the single CdS film The thermal stability of an ITO/CdS bilayer, interfacial reaction and optical transmittance were investigated at different annealing temperatures and environments (air, vacuum and N-2 + H-2). The results showed that the ITO/CdS bilayer film is a good window material for the CuInSe2 and CdTe cells. It is a simple method using a small amount of the cadmium compound.

PHOTOELECTROCHEMISTRY OF ELECTRODEPOSITED POLYCRYSTALLINE CUINSE2 THIN-FILMS .1. ELECTRODEPOSITION OF CUINSE2 FILMS

Electrodeposition of CuInSe2 was investigated in acidic solutions containing Cu2+, In3+ and HSeO2+ ions. The electrodeposition condition was optimized with the aim of obtaining uniform thin films on titanium substrate. The mechanism of the electrodeposition process is discussed. Structure analysis of the deposited film shows a typical polycrystalline chalcopyrite structure, good crystallinity and homogeneous dispersion. The photoelectrochemical cells made of these kinds of deposited films in polysulfide redox solution give distinct photoresponse.

THE PHOTOELECTRIC PROPERTIES OF THIN-FILMS OF RARE-EARTH MONOPHOSPHIDES

The optical, electrical and photoelectric properties of rare earth monophosphides (LnP, Ln = La, Nd, Sm, Y, Dy and Yb) have been studied in thin films. The films exhibit semiconducting behaviour with energy gaps of 1.0-1.46 eV and n-type electrical conduction. Their resistivities are 10(-2) OMEGA-cm with corresponding Hall mobilities of 8.5-400 cm2 V-1 s-1. The films are deposited on a p-type silicon substrate in vacuum. Voltage-current characteristic measurements show that a p-n junction has been formed between LnP and silicon. Spectral sensitivity and a photovoltaic effect have been observed in LnP-Si junctions. They may be useful photoelectric materials.

TRANSPORT OF ELECTROACTIVE SPECIES FE-2+ THROUGH THIN-FILMS OF VANADIUM HEXACYANOFERRATE

It is demonstrated that the electroactive species Fe~(2+) ion can transport easily through the thin films of vanadium hexacyanoferrate (VHF) to the underlaying glassy carbon (GC)electrode surface to be oxidized directly at less positive potential and that it can also be oxidized at the film at more positive potential through the media- tion of redox sites in the film. These two processes yield sequentially clearly distinguished first and second wave in stationary current-potential curves resulting...

Internal structure of copper(II)-phthalocyanine thin films on SiO2/Si substrates investigated by grazing incidence x-ray reflectometry

Jenkins, Tudor; Brieva, A.C.; Jones, D.G.; Evans, D.A., (2006) 'Internal structure of copper(II)-phthalocyanine thin films on SiO2/Si substrates investigated by grazing incidence x-ray reflectometry', Journal of Applied Physics 99 pp.73504 RAE2008

Computational study of the growth of copper thin films by atomic layer deposition

Copper is the main interconnect material in microelectronic devices, and a 2 nm-thick continuous Cu film seed layer needs to be deposited to produce microelectronic devices with the smallest features and more functionality. Atomic layer deposition (ALD) is the most suitable method to deposit such thin films. However, the reaction mechanism and the surface chemistry of copper ALD remain unclear, which is deterring the development of better precursors and design of new ALD processes. In this thesis, we study the surface chemistries during ALD of copper by means of density functional theory (DFT). To understand the effect of temperature and pressure on the composition of copper with substrates, we used ab initio atomistic thermodynamics to obtain phase diagram of the Cu(111)/SiO2(0001) interface. We found that the interfacial oxide Cu2O phases prefer high oxygen pressure and low temperature while the silicide phases are stable at low oxygen pressure and high temperature for Cu/SiO2 interface, which is in good agreement with experimental observations. Understanding the precursor adsorption on surfaces is important for understanding the surface chemistry and reaction mechanism of the Cu ALD process. Focusing on two common Cu ALD precursors, Cu(dmap)2 and Cu(acac)2, we studied the precursor adsorption on Cu surfaces by means of van der Waals (vdW) inclusive DFT methods. We found that the adsorption energies and adsorption geometries are dependent on the adsorption sites and on the method used to include vdW in the DFT calculation. Both precursor molecules are partially decomposed and the Cu cations are partially reduced in their chemisorbed structure. It is found that clean cleavage of the ligand−metal bond is one of the requirements for selecting precursors for ALD of metals. 2 Bonding between surface and an atom in the ligand which is not coordinated with the Cu may result in impurities in the thin film. To have insight into the reaction mechanism of a full ALD cycle of Cu ALD, we proposed reaction pathways based on activation energies and reaction energies for a range of surface reactions between Cu(dmap)2 and Et2Zn. The butane formation and desorption steps are found to be extremely exothermic, explaining the ALD reaction scheme of original experimental work. Endothermic ligand diffusion and re-ordering steps may result in residual dmap ligands blocking surface sites at the end of the Et2Zn pulse, and in residual Zn being reduced and incorporated as an impurity. This may lead to very slow growth rate, as was the case in the experimental work. By investigating the reduction of CuO to metallic Cu, we elucidated the role of the reducing agent in indirect ALD of Cu. We found that CuO bulk is protected from reduction during vacuum annealing by the CuO surface and that H2 is required in order to reduce that surface, which shows that the strength of reducing agent is important to obtain fully reduced metal thin films during indirect ALD processes. Overall, in this thesis, we studied the surface chemistries and reaction mechanisms of Cu ALD processes and the nucleation of Cu to form a thin film.