UV-sensitive P compounds: Release mechanism, seasonal fluctuation and inhibitory effects on alkaline phosphatase activity in a shallow Chinese freshwater lake (Donghu Lake)

Filtrable phosphorus compounds in a shallow Chinese freshwater lake (Donghu Lake) were fractionated by Sephadex G-25 gel-filtration chromatography. Some portions of those compounds released soluble reactive phosphorus upon irradiation with low dose ultraviolet light. Catalase and a hydroxyl radical scavenger (mannitol) markedly prevented photosensitive phosphorus release. The observed effects may be explained by the action of oxidizing reagents such as hydroxyl radicals, produced in photochemical reactions between UV irradiation and humic substances in the water. There was a strong seasonality in UV-sensitive P (UVSP) release. Michaels constants (K-m) of total alkaline phosphatase in the lake water showed a direct positive relation to UVSP. Plot of K-m against the UVSP/phosphomonoester ratio reveals a strong relationship between the two variables. These results suggest that in some situations UVSP may be a competitive inhibitor of alkaline phosphatase activity in the lake. The competitive inhibition of fractionated UVSP on alkaline phosphatase reagent (Sigma) apparently supports this hypothesis.

Rapid bioassay as indicator of potentially harmful effects for dioxin-like compounds in sample of Ya-Er Lake, China: Requirements for clean-up and comparison to chemical analysis

A rapid bioassay was established measuring the extracts of wildlife samples which were taken from Ya-Er Lake area, China. In extracts of these samples containing PCDD/Fs and PCBs, bioassay and chemically derived TCDD-equivalents (TEQs) were nearly identical. Our results indicate this bioassay is an excellent complement to chemical residue analysis and a useful tool in understanding the complex interactions of halogenated hydrocarbons. However, it must be mentioned that the proper prior clean-up method is very important for using the bioassay.

Optically controlled quantum dot gated transistors with high on/off ratio

We report the design and fabrication of InAs quantum dot gated transistors, which are normally-on, where the channel current can be switched off by laser illumination. Laser light at 650 nm with a power of 850 pW switches the channel current from 5 mu A to 2 pA, resulting in an on/off ratio of more than 60 dB. The switch-off mechanism and carrier dynamics are analyzed with simulated band structure.

Ultrafast dynamics of four-state magnetization reversal in (Ga,Mn)As

The ultrafast dynamics of in-plane four-state magnetization reversal from compressively strained (Ga,Mn)As film was investigated by magneto-optical Kerr rotation measurement. The magnetization reversal signal was dramatically suppressed upon pumping, and recovered slowly with time evolution. The low switching field H-c1 increased abruptly from 30 to 108 G on the first several picoseconds and recovered back to the value before optical pumping within about 500 ps, whereas the high switching field H-c2 did not change obviously upon pumping, implying a domain-wall nucleation/propagation at low fields and coherent magnetization rotation at high fields in the magnetization reversal process.

Anisotropy of magnetic properties in ferrimagnetic ytterbium iron garnet under high magnetic fields

The magnetic anisotropy in ytterbium iron garnet (YbIG) is theoretically investigated under high magnetic fields (up to 160 kOe). According to the crystal field effect in ytterbium gallium garnet (YbGaG), a detailed discussion of crystal-field interaction in YbIG is presented where a suitable set of crystal-field parameters is obtained. Meanwhile, the influences of nine crystal-field parameters on the crystal-field energy splitting are analyzed. On the other hand, considering the ytterbium-iron (Yb-Fe) superexchange interaction of YbIG, the spontaneous magnetization is calculated at different temperatures for the [111] direction. In particular, we demonstrate that the Wesis constant lambda is the function of 1/T in YbIG. In addition, the field dependences of the magnetization for the [110] and [111] directions are theoretically described where a noticeable anisotropy can be found. Our theory further confirms the great contribution of anisotropic Yb-Fe superexchange interaction to the anisotropy of the magnetization in YbIG. Moreover, our theoretical results are compared with the available experiments.

Spin relaxation and dephasing mechanism in (Ga,Mn)As studied by time-resolved Kerr rotation

Spin dynamics in (Ga,Mn)As films grown on GaAs(001) was investigated by Time-resolved magneto-optical Kerr effect. The Kerr signal decay time of (Ga,Mn)As without external magnetic field applied was found to be several hundreds picoseconds, which suggested that photogenerated polarized holes and magnetic ions are coupled as a ferromagnetic system. Nonmonotonic temperature dependence of relaxation and dephasing (R&D) time and Larmor frequency manifests that Bir-Aronov-Pikus mechanism dominates the spin R&D time at low temperature, while D'yakonov-Perel mechanism dominates the spin R&D time at high temperature, and the crossover between the two regimes is Curie temperature.

Magnetic ordering and irreversible magnetization between ZFC and FC states in RCo5Ga7 compounds

The magnetic properties of RCo5Ga7 (R = Y, Tb, Dy, Ho and Er) compounds which crystallize in the ScFe6Ga6-type structure have been studied. The compounds with R, Y, Tb, Dy, Ho and Er display behaviour similar to semiconductors. The Co transition metal sublattice is ferrimagnetic with a very low spontaneous magnetization. The ferrimagnetic ordering observed for R = Y, Tb, Dy, Ho and Er is due to the transition metal sublattice with transition temperatures at about 295 K. At low temperatures, the magnetic ordering for R Tb, Dy, Ho and Er is due to the rare-earth sublattice, which is ferromagnetic with a Curie temperature below 5 K. By fitting the linear part of the inverse magnetization, the effective magnetic moment of the R ion is found to be close to its expected theoretical value, with paramagnetic Curie temperatures below 5 K. Due to the paramagnetic nature of the R sublattice above 60 K, the ferrimagnetic ordering temperature of the Co sublattice does not vary with the type of rare-earth ion. The irreversibility of the magnetization of YCo5Ga7, as measured in zero-field cooled (ZFC) and field cooled (FC) states, is attributed to movement of domain walls. Application of a large enough applied field completes the movement of the domain wall from the low-temperature to the high-temperature one at 5 K. With a very low magnetic field 100 Oe, the difference between the ZFC and the FC shrinks. (C) 2004 Elsevier B.V. All rights reserved.

(Ga,Mn,N) compounds growth with mass-analyzed low energy dual ion beam deposition

The (Ga,Mn,N) samples were grown by the implantation of low-energy Mn ions into GaN/Al2O3 substrate at different elevated substrate temperatures with mass-analyzed low-energy dual ion beam deposition system. Auger electron spectroscopy depth profile of samples grown at different substrate temperatures indicates that the Mn ions reach deeper in samples with higher substrate temperatures. Clear X-ray diffraction peak from (Ga,Mn)N is observed in samples grown at the higher substrate temperature. It indicates that under optimized substrate temperature and annealing conditions the solid solution (Ga,Mn)N phase in samples was formed with the same lattice structure as GaN and different lattice constant. (C) 2003 Elsevier Science B.V. All rights reserved.

Investigation progress on key photonic integration for application in optical communication network

Proceeding from the consideration of the demands from the functional architecture of high speed, high capacity optical communication network, this paper points out that photonic integrated devices, including high speed response laser source, narrow band response photodetector high speed wavelength converter, dense wavelength multi/demultiplexer, low loss high speed response photo-switch and multi-beam coupler are the key components in the system. The, investigation progress in the laboratory will be introduced.

(Ga,Mn,As) compounds grown on semi-insulating GaAs with mass-analyzed low energy dual ion beam depositionw

The (Ga,Mn,As) compounds were obtained by the implantation of Mn ions into semi-insulating GaAs substrate with mass-analyzed low energy dual ion beam deposition technique. Auger electron spectroscopy depth profile of a typical sample grown at the substrate temperature of 250degreesC showed that the Mn ions were successfully implanted into GaAs substrate with the implantation depth of 160 nm. X-ray diffraction was employed for the structural analyses of all samples. The experimental results were greatly affected by the substrate temperature. Ga5.2Mn was obtained in the sample grown at the substrate temperature of 250degreesC. Ga5.2Mn, Ga5Mn8 and Mn3Ga were obtained in the sample grown at the substrate temperature of 400degreesC. However, there is no new phase in the sample grown at the substrate temperature of 200degreesC. The sample grown at 400degreesC was annealed at 840degreesC. In this annealed sample Mn3Ga disappeared, Ga5Mn8 tended to disappear,Ga5.2Mn crystallized better and a new phase of Mn2As was generated. (C) 2002 Elsevier Science B,V. All rights reserved.

Syntheses, crystallographic and magnetic properties of Nd3Fe29-xCrx and other associated compounds

A systematic study of syntheses and magnetic properties of the Nd-3 Fe29-xCrx (x=4.5, 4.7, 5.0, and 5.5) compounds has been performed. The single-phase compounds of Nd3Fe29-xCrx can be formed in the range 4.5 less than or equal to x less than or equal to 5.5. The Curie temperature Tc, the saturation magnetization M-S at 4.2 K, the anisotropy field H-A at 4.2 K and room temperature, and the intra-sublattice exchange coupling parameter j(FeFe) at 4.2 K for the Nd3Fe29-xCrx compounds decrease with increasing Cr composition from x=4.5 to 5.5, respectively. Nitrogenation and carbonation, unlike hydrogenation, result mainly in improvements of the Curie temperature, the saturation magnetization and the anisotropy field at 4.2 K and room temperature for the Nd3Fe29-xCrx compounds compared with their parent compounds.

Photoluminescence enhancement of porous silicon by organic cyano compounds

A pronounced photoluminescence enhancement on chemically oxidized porous silicon was induced by a series of organic cyano compounds including 1,2-dicyanoethylene (CE), 1,3-dicyanobenzene (1,3-CB), 1,4-dicyanobenzene (1,4-CB), 1-cyanonaphthalene (1-CN), and 9-cyanoanthracene (9-CA). Photoluminescence enhancement effects were reversible for all compounds studies in this work. A dependence of photoluminescence enhancement on the steric effect and the electronic characteristics of these compounds and the structure of the porous silicon substrates were analyzed in terms of the photoluminescence enhancing factors. Surface chemical composition examined by Fourier transform infrared (FTIR) spectra demonstrated that the surface Si-H bonds were not changed and no new luminescent compounds were formed on porous silicon surface during adsorption of cyano compounds. A mechanism based on induced surface states acting as radiative recombination centers by cyano compounds adsorption was suggested.

Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

In this letter, we present a facet coating design to delay the excited state (ES) lasing for 1310 nm InAs/GaAs quantum dot lasers. The key point of our design is to ensure that the mirror loss of ES is larger than that of the ground state by decreasing the reflectivity of the ES. In the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are Ta2O5 and SiO2, respectively. Compared with the traditional Si/SiO2 facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the ES lasing has been delayed from 90 to 100 degrees C for the laser diodes with cavity length of 1.2 mm. Furthermore, the characteristic temperature (T-0) of the laser diodes is also improved.

RSA-Based Password-Authenticated Key Exchange, Revisited

The RSA-based Password-Authenticated Key Exchange (PAKE) protocols have been proposed to realize both mutual authentication and generation of secure session keys where a client is sharing his/her password only with a server and the latter should generate its RSA public/private key pair (e, n), (d, n) every time due to the lack of PKI (Public-Key Infrastructures). One of the ways to avoid a special kind of off-line (so called e-residue) attacks in the RSA-based PAKE protocols is to deploy a challenge/response method by which a client verifies the relative primality of e and φ(n) interactively with a server. However, this kind of RSA-based PAKE protocols did not give any proof of the underlying challenge/response method and therefore could not specify the exact complexity of their protocols since there exists another security parameter, needed in the challenge/response method. In this paper, we first present an RSA-based PAKE (RSA-PAKE) protocol that can deploy two different challenge/response methods (denoted by Challenge/Response Method1 and Challenge/Response Method2). The main contributions of this work include: (1) Based on the number theory, we prove that the Challenge/Response Method1 and the Challenge/Response Method2 are secure against e-residue attacks for any odd prime e; (2) With the security parameter for the on-line attacks, we show that the RSA-PAKE protocol is provably secure in the random oracle model where all of the off-line attacks are not more efficient than on-line dictionary attacks; and (3) By considering the Hamming weight of e and its complexity in the RSA-PAKE protocol, we search for primes to be recommended for a practical use. We also compare the RSA-PAKE protocol with the previous ones mainly in terms of computation and communication complexities.