Low-Complexity Detection in Large-Dimension MIMO-ISI Channels Using Graphical Models

In this paper, we deal with low-complexity near-optimal detection/equalization in large-dimension multiple-input multiple-output inter-symbol interference (MIMO-ISI) channels using message passing on graphical models. A key contribution in the paper is the demonstration that near-optimal performance in MIMO-ISI channels with large dimensions can be achieved at low complexities through simple yet effective simplifications/approximations, although the graphical models that represent MIMO-ISI channels are fully/densely connected (loopy graphs). These include 1) use of Markov random field (MRF)-based graphical model with pairwise interaction, in conjunction with message damping, and 2) use of factor graph (FG)-based graphical model with Gaussian approximation of interference (GAI). The per-symbol complexities are O(K(2)n(t)(2)) and O(Kn(t)) for the MRF and the FG with GAI approaches, respectively, where K and n(t) denote the number of channel uses per frame, and number of transmit antennas, respectively. These low-complexities are quite attractive for large dimensions, i.e., for large Kn(t). From a performance perspective, these algorithms are even more interesting in large-dimensions since they achieve increasingly closer to optimum detection performance for increasing Kn(t). Also, we show that these message passing algorithms can be used in an iterative manner with local neighborhood search algorithms to improve the reliability/performance of M-QAM symbol detection.

Low‐voltage varistors based on zinc antimony spinel Zn7Sb2O12

It is possible to prepare low‐voltage varistors from the zinc antimony spinel Zn7Sb2O12 with breakdown voltages in the range of 3–20 V and nonlinearity coefficient α=7–15. The varistor property is due to the formation of high ohmic potential barriers at the grain boundary regions on low‐ohmic n‐type grain interiors of the polycrystalline samples. The method of preparation of the spinel, synthesized by coprecipitation followed by annealing under restricted partial pressures of oxygen, controls the mixed valence states for antimony, namely, Sb3+ and Sb5+. This is critical in attaining high nonlinearity and lower breakdown voltages.

A mostly-digital analog scan-out chain for low bandwidth voltage measurement for analog IP test

A method of precise measurement of on-chip analog voltages in a mostly-digital manner, with minimal overhead, is presented. A pair of clock signals is routed to the node of an analog voltage. This analog voltage controls the delay between this pair of clock signals, which is then measured in an all-digital manner using the technique of sub-sampling. This sub-sampling technique, having measurement time and accuracy trade-off, is well suited for low bandwidth signals. This concept is validated by designing delay cells, using current starved inverters in UMC 130nm CMOS process. Sub-mV accuracy is demonstrated for a measurement time of few seconds.

Low ML Decoding Complexity STBCs via Codes Over the Klein Group

In this paper, we give a new framework for constructing low ML decoding complexity space-time block codes (STBCs) using codes over the Klein group K. Almost all known low ML decoding complexity STBCs can be obtained via this approach. New full- diversity STBCs with low ML decoding complexity and cubic shaping property are constructed, via codes over K, for number of transmit antennas N = 2(m), m >= 1, and rates R > 1 complex symbols per channel use. When R = N, the new STBCs are information- lossless as well. The new class of STBCs have the least knownML decoding complexity among all the codes available in the literature for a large set of (N, R) pairs.

Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics

A highly transparent all ZnO thin film transistor (ZnO-TFT) with a transmittance of above 80% in the visible part of the spectrum, was fabricated by direct current magnetron sputtering, with a bottom gate configuration. The ZnO-TFT with undoped ZnO channel layers deposited on 300 nm Zn0.7Mg0.3O gate dielectric layers attains an on/off ratio of 104 and mobility of 20 cm2/V s. The capacitance-voltage (C−V) characteristics of the ZnO-TFT exhibited a transition from depletion to accumulation with a small hysteresis indicating the presence of oxide traps. The trap density was also computed from the Levinson’s plot. The use of Zn0.7Mg0.3O as a dielectric layer adds additional dimension to its applications. The room temperature processing of the device depicts the possibility of the use of flexible substrates such as polymer substrates. The results provide the realization of transparent electronics for next-generation optoelectronics.

Low loss and frequency (1 kHz–1 MHz) independent dielectric characteristics of 3BaO–3TiO2–B2O3 glasses

X-ray powder diffraction along with differential thermal analysis carried out on the as-quenched samples in the 3BaO–3TiO2–B2O3 system confirmed their amorphous and glassy nature, respectively. The dielectric constants in the 1 kHz–1 MHz frequency range were measured as a function of temperature (323–748 K). The dielectric constant and loss were found to be frequency independent in the 323–473 K temperature range. The temperature coefficient of dielectric constant was estimated using Havinga’s formula and found to be 16 ppm K−1. The electrical relaxation was rationalized using the electric modulus formalism. The dielectric constant and loss were 17±0.5 and 0.005±0.001, respectively at 323 K in the 1 kHz–1 MHz frequency range which may be of considerable interest to capacitor industry.

Structural and electrical properties of low pressure metalorganic chemical vapor deposition grown Eu2O3 films on Si(100)

Structural and electrical properties of Eu2O3 films grown on Si(100) in 500–600 °C temperature range by low pressure metalorganic chemical vapor deposition are reported. As-grown films also possess the impurity Eu1−xO phase, which has been removed upon annealing in O2 ambient. Film’s morphology comprises uniform spherical mounds (40–60 nm). Electrical properties of the films, as examined by capacitance-voltage measurements, exhibit fixed oxide charges in the range of −1.5×1011 to −6.0×1010 cm−2 and dielectric constant in the range of 8–23. Annealing has resulted in drastic improvement of their electrical properties. Effect of oxygen nonstoichiometry on the film’s property is briefly discussed.

Elerctron Transport Coefficients in N2 in Crossed Fields at Low E/p

The numerical solutions of Boltzmann transpott equation for the energy distribution of electrons moving in crossed fields in nitrogen have been obtained for 100 ÿ E/p ÿ 1000 V M-1 Torr-1 and for 0ÿ B/p ÿ 0.02 Tesla Torr-1 using the concept of energy dependent effective field intensity. From the derived distribution functions the electron mean energy, the tranaverse and perpendicular drift velocities and the averaged effective field intensity (Eavef) which signifies the average field intensity experienced by electron swarms in E àB field have been derived. The maximum difference between the electron mean energy for a given E ÃÂB field and that corresponding to Eavef/p (p is the gas pressure) is found to be within ñ3.5%.

Low Voltage Firing Characteristics of a Simple Triggered Vacuum Gap

The firing characteristics of the simple triggered vacuum gap (TVG) using lead zirconate titanate as dielectric material in the triggered gap are described. This TVG has a long life of about 2000 firings without appreciable deterioration of the electrical properties for main discharge currents upto 3 kA and is much superior to these made with Supramica (Mycalex Corporation of America) and silicon carbide as used in our earlier investigations. The effects of the variation of trigger voltage, trigger curcit, trigger pulse duration, trigger pulse energy, main gap voltage, main gap separation and main circuit energy on the firing characteristics have been studied. Trigger resistance progressively decreases with the number of firings of the trigger gap and as well as of the main gap. This decrease in the trigger resistance is more pronounced for main discharge currents exceeding 10 kA. The minimum trigger current required for reliable firing decreases with increase of trigger voltage upto a threshold value of 1.2 kV and there-onwards saturates at 3.0 A. This value is less than that obtained with Supramica as dielectric material. One hundred percent firing probability of the TVG at main gap voltages as low as 50 V is possible and this low voltage breakdown of the main gap appears to be similar to the breakdown at low pressures between moving plasma by other workers. and the cold electrodes immersed in it, as reported.

Influence of Tempered Microstructures on the Transformation Behaviour of Cold Deformed and Intercritically Annealed Medium Carbon Low Alloy Steel

This research is focused on understanding the role of microstructural variables and processing parameters in obtaining optimised dual phase structures in medium carbon low alloy steels. Tempered Martensite structures produced at 300, 500, and 650 degrees C, were cold rolled to varied degrees ranging from 20 to 80% deformation. Intercritical annealing was then performed at 740, 760, and 780 degrees C for various time duration ranging from 60 seconds to 60 minutes before quenching in water. The transformation behaviour was studied with the aid of optical microscopy and hardness curves. From the results, it is observed that microstructural condition, deformation, and intercritical temperatures influenced the chronological order of the competing stress relaxation and decomposition phase reactions which interfered with the rate of the expected alpha -> gamma transformation. The three unique transformation trends observed are systematically analyzed. It was also observed that the 300 and 500 degrees C tempered initial microstructures were unsuitable for the production of dual structures with optimized strength characteristics.

Low-inductance axial flux BLDC motor drive for more electric aircraft

As aircraft technology is moving towards more electric architecture, use of electric motors in aircraft is increasing. Axial flux BLDC motors (brushless DC motors) are becoming popular in aero application because of their ability to meet the demand of light weight, high power density, high efficiency and high reliability. Axial flux BLDC motors, in general, and ironless axial flux BLDC motors, in particular, come with very low inductance Owing to this, they need special care to limit the magnitude of ripple current in motor winding. In most of the new more electric aircraft applications, BLDC motor needs to be driven from 300 or 600 Vdc bus. In such cases, particularly for operation from 600 Vdc bus, insulated-gate bipolar transistor (IGBT)-based inverters are used for BLDC motor drive. IGBT-based inverters have limitation on increasing the switching frequency, and hence they are not very suitable for driving BLDC motors with low winding inductance. In this study, a three-level neutral point clamped (NPC) inverter is proposed to drive axial flux BLDC motors. Operation of a BLDC motor driven from three-level NPC inverter is explained and experimental results are presented.

Conformation-Changing Aggregation in Hydroxyacetone: A Combined Low-Temperature FTIR, Jet, and Crystallographic Study

Aggregation in hydroxyacetone (HA) is studied using low-temperature FTIR, supersonic jet expansion, and X-ray crystallographic (in situ cryocrystallization) techniques. Along with quantum chemical methods (MP2 and DFT), the experiments unravel the conformational preferences of HA upon aggregation to dinners and oligomers. The O-H center dot center dot center dot O=C intramolecular hydrogen bond present in the gas-phase monomer partially opens upon aggregation in supersonic expansions, giving rise to intermolecular cooperatively enhanced O-H center dot center dot center dot O-H hydrogen bonds in competition with isolated O-H center dot center dot center dot O=C hydrogen bonds. On the other hand, low-temperature IR studies on the neat solid and X-ray crystallographic data reveal that HA undergoes profound conformational changes upon crystallization, with the HOCC dihedral angle changing from similar to 0 degrees in the gas phase to similar to 180 degrees in the crystalline phase, hence giving rise to a completely new conformation. These conclusions are supported by theoretical calculations performed on the geometry derived from the crystalline phase.

Passive vibration isolation of reaction wheel disturbances using a low frequency flexible space platform

Reaction wheel assemblies (RWAs) are momentum exchange devices used in fine pointing control of spacecrafts. Even though the spinning rotor of the reaction wheel is precisely balanced to minimize emitted vibration due to static and dynamic imbalances, precision instrument payloads placed in the neighborhood can always be severely impacted by residual vibration forces emitted by reaction wheel assemblies. The reduction of the vibration level at sensitive payloads can be achieved by placing the RWA on appropriate mountings. A low frequency flexible space platform consisting of folded continuous beams has been designed to serve as a mount for isolating a disturbance source in precision payloads equipped spacecrafts. Analytical and experimental investigations have been carried out to test the usefulness of the low frequency flexible platform as a vibration isolator for RWAs. Measurements and tests have been conducted at varying wheel speeds, to quantify and characterize the amount of isolation obtained from the reaction wheel generated vibration. These tests are further extended to other variants of similar design in order to bring out the best isolation for given disturbance loads. Both time and frequency domain analysis of test data show that the flexible beam platform as a mount for reaction wheels is quite effective and can be used in spacecrafts for passive vibration control. (C) 2011 Elsevier Ltd. All rights reserved.

A comparative study of erbium oxide and gadolinium oxide high-k dielectric thin films grown by low-pressure metalorganic chemical vapour deposition (MOCVD) using beta-Diketonates as precursors

In this paper, a comparative study of thin films of Er2O3 and Gd2O3 grown on n-type Si(100) by low-pressure metalorganic chemical vapour deposition (MOCVD) under the identical conditions has been presented. beta-Diketonate complex of rate earth metals was used as precursor. Description on the evolution of the morphology, structure, optical, and electrical characteristics of films with respect to growth parameters and post-deposition annealing process has been presented. As-gown Gd2O3 films grow with <111> texture, whereas the texture of Er2O3 films strongly depends on the growth temperature (either <100> or <111>). Compositional analysis reveals that the Gd2O3 films grown at or above 500degreesC are carbon free whereas Er2O3 films at upto 525degreesC show the presence of heteroatoms and Er2O3 films grown above 525degreesC are carbon five. The effective dielectric constant is in the range of 7-24, while the fixed charge density is in the range - 10(11) to 10(10) CM-2 as extracted from the C-V characteristics. DC I-V study was carried out to examine the leakage behaviour of films. It reveals that the as-grown Gd2O3 film was very leakey in nature. Annealing of the films in oxidizing ambient for a period of 20 min results in a drastic improvement in the leakage behaviour. The presence of heteroatoms (such as carbon) and their effect on the properties of films are discussed.

Low temperature synthesis of layered NaxCoO2 and KxCoO2 from NaOH/KOH fluxes and their ion exchange properties

We report a low temperature synthesis of layered Na0×20CoO2 and K0×44CoO2 phases from NaOH and KOH fluxes at 400°C. These layered oxides are employed to prepare hexagonal HCoO2, LixCoO2 and Delafossite AgCoO2 phases by ion exchange method. The resulting oxides were characterised by powder X-ray diffraction, X-ray photoelectron spectroscopy, SEM and EDX analysis. Final compositions of all these oxides are obtained from chemical analysis of elements present. Na0×20CoO2 oxide exhibits insulating to metal like behaviour, whereas AgCoO2 is semiconducting.