A bottom-up energy analysis across a diverse urban building portfolio: Retrofits for the buildings at the Royal Botanic Gardens, Kew, UK

A methodology for the analysis of building energy retrofits has been developed for a diverse set of buildings at the Royal Botanic Gardens (RBG), Kew in southwest London, UK. The methodology requires selection of appropriate building simulation tools dependent on the nature of the principal energy demand. This has involved the development of a stand-alone model to simulate the heat flow in botanical glasshouses, as well as stochastic simulation of electricity demand for buildings with high equipment density and occupancy-led operation. Application of the methodology to the buildings at RBG Kew illustrates the potential reduction in energy consumption at the building scale achievable from the application of retrofit measures deemed appropriate for heritage buildings and the potential benefit to be gained from onsite generation and supply of energy. © 2014 Elsevier Ltd.

Parametric resonance for vibration energy harvesting with design techniques to passively reduce the initiation threshold amplitude

A vibration energy harvester designed to access parametric resonance can potentially outperform the conventional direct resonant approach in terms of power output achievable given the same drive acceleration. Although linear damping does not limit the resonant growth of parametric resonance, a damping dependent initiation threshold amplitude exists and limits its onset. Design approaches have been explored in this paper to passively overcome this limitation in order to practically realize and exploit the potential advantages. Two distinct design routes have been explored, namely an intrinsically lower threshold through a pendulum-lever configuration and amplification of base excitation fed into the parametric resonator through a cantilever-initial-spring configuration. Experimental results of the parametric resonant harvesters with these additional enabling designs demonstrated an initiation threshold up to an order of magnitude lower than otherwise, while attaining a much higher power peak than direct resonance. © 2014 IOP Publishing Ltd.

Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of ΔEt 0.3 eV and with a density of state distribution as Dt(Et-j)=Dt0exp(-ΔEt/ kT)with Dt0 = 5.02 × 1011 cm-2 eV-1. Such a model is useful for developing simulation tools for circuit design. © 2014 AIP Publishing LLC.

Effect of ration on the growth and energy budget of Chinese longsnout catfish, Leiocassis longirostris Gunther

The effect of ration on growth and energy budget of Chinese longsnout catfish was investigated in a growth trial. Fish of initial body weight of 6.5 g were fed at six ration levels (RLs): starvation, 0.8%, 1.6%, 2.4%, 3.2% of body weight per day, and apparent satiation for 8 weeks. Fish were weighed biweekly to adjust feed amount. The results showed that specific growth rate in wet weight, protein and energy increased logarithmically with increased RLs. The relationship of specific growth rate in wet weight (SGRw, % day(-1)) and RL (%) was a decelerating curve: SGRw=-0.62+3.10 Ln(RL+1). The energy budget equation at satiation was: 100 IE=12.94 FE+5.50(ZE+UE)+40.07 HE+41.49 RE, where IE, FE, (ZE+UE), HE, RE are food energy, faecal energy, excretory energy, heat production and recovered energy respectively. Body composition was slightly but significantly affected by ration size except for protein content. The most efficient ration based on the relationship between RL and feed efficiency ratio in energy (FERe) was 1.8% of body weight per day.

Effect of body size on growth and energy budget of Nile tilapia, Oreochromis niloticus

A growth trial was conducted at 30 degrees C to investigate the effect of body size on growth and energy budget of Nile tilapia. The average initial body weights of the four size groups tested were 9.3, 34.1, 80.3 and 172.4 g, respectively. Fish were fed to satiation twice a day with a diet containing 35.6% crude protein. Food consumption (C-max: kJ/day) increased with body size (W: g) according to the relationship: Ln C-max = 1.45 + 0.42 LnW. The final body contents of dry matter, crude protein and ash per unit body weight increased with increasing body size while contents of fat and energy were independent of body size. Specific growth rates of wet weight, dry weight, protein and energy decreased as the fish increased in size. Feed efficiencies in wet weigh, dry weight and crude protein decreased with increasing body size, while that of energy remained unchanged. The proportions of energy intake allocated to the various components (faecal energy, excretory energy, heat production and recovered energy) of the energy budget were not significantly affected by body size, and the average budget was: 100IE-18.5(+/- 1.33)FE + 5.9 (+/- 3.09)(ZE + UE) + 49.3(+/- 3.77)HE + 26.3(+/- 6.23)RE, where IE, FE, (ZE + UE), HE and RE represent gross energy intake, faecal energy, excretory (non-faecal) energy loss, heat production and recovered energy (growth), respectively. It is suggested that the decrease in growth rate in larger fish is mainly due to the decrease in relative food intake. (C) 1997 Elsevier Science B.V.

Correcting the systematic error of the density functional theory calculation: the alternate combination approach of genetic algorithm and neural network

The alternate combinational approach of genetic algorithm and neural network (AGANN) has been presented to correct the systematic error of the density functional theory (DFT) calculation. It treats the DFT as a black box and models the error through external statistical information. As a demonstration, the AGANN method has been applied in the correction of the lattice energies from the DFT calculation for 72 metal halides and hydrides. Through the AGANN correction, the mean absolute value of the relative errors of the calculated lattice energies to the experimental values decreases from 4.93% to 1.20% in the testing set. For comparison, the neural network approach reduces the mean value to 2.56%. And for the common combinational approach of genetic algorithm and neural network, the value drops to 2.15%. The multiple linear regression method almost has no correction effect here.

Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well

Hexagonal nanopillars with a single InGaAs/GaAs quantum well (QW) were fabricated on a GaAs (111) B substrate by selective-area metal-organic vapor phase epitaxy. The standard deviations in diameter and height of the nanopillars are about 2% and 5%, respectively. Zincblende structure and rotation twins were identified in both the GaAs and the InGaAs layers by electron diffraction. The excitation-power-density-dependent micro-photoluminescence (mu-PL) of the nanopillars was measured at 4.2, 50, 100 and 150 K. It was shown that, with increasing excitation power density, the mu-PL peak's positions shift to a higher energy, and their intensity and width increase, which were rationalized using a model that includes the effects of piezoelectricity, photon-screening and band-filling. It was also revealed that the rotation twins significantly reduce the diffusion length of the carriers in the nanopillars, compared to that in the regular semiconductors.

The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD

The effects of growth temperature and V/III ratio on the InN initial nucleation of islands on the GaN (0 0 0 1) surface were investigated. It is found that InN nuclei density increases with decreasing growth temperature between 375 and 525 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters of less than 100 nm, whereas at elevated temperatures the InN islands can grow larger and well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. At a given growth temperature of 500 degrees C, a controllable density and size of separated InN islands can be achieved by adjusting the V/III ratio. The larger islands lead to fewer defects when they are coalesced. Comparatively, the electrical properties of the films grown under higher V/III ratio are improved.

Stone-Wales defects created by low energy recoils in single-walled silicon carbide nanotubes

The defect creation at low energy events was studied using density functional theory molecular dynamics simulations in silicon carbide nanotubes, and the displacement threshold energies determined exhibit a dependence on sizes, which decrease with decreasing diameter of the nanotubes. The Stone-Wales (SW) defect, which is a common defect configurations induced through irradiation in nanotubes, has also been investigated, and the formation energies of the SW defects increase with increasing diameter of the nanotubes. The mean threshold energies were found to be 23 and 18 eV for Si and C in armchair (5,5) nanotubes. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3238307]

Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods

The atomistic pseudopotential quantum mechanical calculations are used to study the transport in million atom nanosized metal-oxide-semiconductor field-effect transistors. In the charge self-consistent calculation, the quantum mechanical eigenstates of closed systems instead of scattering states of open systems are calculated. The question of how to use these eigenstates to simulate a nonequilibrium system, and how to calculate the electric currents, is addressed. Two methods to occupy the electron eigenstates to yield the charge density in a nonequilibrium condition are tested and compared. One is a partition method and another is a quasi-Fermi level method. Two methods are also used to evaluate the current: one uses the ballistic and tunneling current approximation, another uses the drift-diffusion method. (C) 2009 American Institute of Physics. [doi:10.1063/1.3248262]

Observation of intershell and hybridized energy states in InAs/GaAs quantum dots

We have investigated the evolution of exciton state filling as a function of excitation power density in InAs/GaAs quantum dots (QDs). In addition to the emission bands of exciton recombination corresponding to the atom-like S, P, and D, etc. shells of quantum dots, it was observed that some extra states, P-' (between the S and P shells) and D-' (between the P and D shells), appear in the spectra with increasing number of excitons occupying the QDs. The emergence of these intershell excitonic levels is an experimental demonstration of strong exciton-exciton exchange interaction and coupling as well as state mixing and hybridization of a multiexciton system in quantum dots.

Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density

In order to obtain greater radiation hardness for SIMOX (separation by implanted oxygen) materials, nitrogen was implanted into SIMOX BOX (buried oxide). However, it has been found by the C-V technique employed in this work that there is an obvious increase of the fixed positive charge density in the nitrogen-implanted BOX with a 150 out thickness and 4 x 10(15) cm(-2) nitrogen implantation dose, compared with that unimplanted with nitrogen. On the other hand, for the BOX layers with a 375 nm thickness and implanted with 2 x 10(15) and 3 x 10(15) cm(-2) nitrogen doses respectively, the increase of the fixed positive charge density induced by implanted nitrogen has not been observed. The post-implantation annealing conditions are identical for all the nitrogen-implanted samples. The increase in fixed positive charge density in the nitrogen-implanted 150 nm BOX is ascribed to the accumulation of implanted nitrogen near the BOX/Si interface due to the post-implantation annealing process according to SIMS results. In addition, it has also been found that the fixed positive charge density in initial BOX is very small. This means SIMOX BOX has a much lower oxide charge density than thermal SiO2 which contains a lot of oxide charges in most cases.

Quantum master equation scheme of time-dependent density functional theory to time-dependent transport in nanoelectronic devices

In this work a practical scheme is developed for the first-principles study of time-dependent quantum transport. The basic idea is to combine the transport master equation with the well-known time-dependent density functional theory. The key ingredients of this paper include (i) the partitioning-free initial condition and the consideration of the time-dependent bias voltages which base our treatment on the Runge-Gross existence theorem; (ii) the non-Markovian master equation for the reduced (many-body) central system (i.e., the device); and (iii) the construction of Kohn-Sham master equations for the reduced single-particle density matrix, where a number of auxiliary functions are introduced and their equations of motion (EOMs) are established based on the technique of spectral decomposition. As a result, starting with a well-defined initial state, the time-dependent transport current can be calculated simultaneously along with the propagation of the Kohn-Sham master equation and the EOMs of the auxiliary functions.

Correlation effects for semiconducting single-wall carbon nanotubes: A density matrix renormalization group study

In this paper we report the applicability of the density matrix renormalization group (DMRG) approach to the cylindrical single wall carbon nanotube (SWCN) for the purpose of its correlation effect. By applying the DMRG approach to the t+U+V model, with t and V being the hopping and Coulomb energies between the nearest neighboring sites, respectively, and U the on-site Coulomb energy, we calculate the phase diagram for the SWCN with chiral numbers (n(1)=3, n(2)=2), which reflects the competition between the correlation energy U and V. Within reasonable parameter ranges, we investigate possible correlated ground states, the lowest excitations, and the corresponding correlation functions in which the connection with the excitonic insulator is particularly addressed.

Surface morphology of ion-beam deposited carbon films under high temperature

Carbon films with an open-ended structure were obtained by mass-selected ion-beam deposition technique at 800degreesC. Raman spectra show that these films are mainly sp(2)-bonded. In our case, threshold ion energy of 140 eV was found for the formation of such surface morphology. High deposition temperature and ion-beam current density are also responsible for the growth of this structure. Additionally, the growth mechanism of the carbon films is discussed in this article. It was found that the ions sputtered pits on the substrate in the initial stage play a key role in the tubular surface morphology. (C) 2002 American Vacuum Society.