Surface morphology of ion-beam deposited carbon films under high temperature


Autoria(s): Liao MY; Chai CL; Yang SY; Liu ZK; Qin FG; Wang ZG
Data(s)

2002

Resumo

Carbon films with an open-ended structure were obtained by mass-selected ion-beam deposition technique at 800degreesC. Raman spectra show that these films are mainly sp(2)-bonded. In our case, threshold ion energy of 140 eV was found for the formation of such surface morphology. High deposition temperature and ion-beam current density are also responsible for the growth of this structure. Additionally, the growth mechanism of the carbon films is discussed in this article. It was found that the ions sputtered pits on the substrate in the initial stage play a key role in the tubular surface morphology. (C) 2002 American Vacuum Society.

Identificador

http://ir.semi.ac.cn/handle/172111/11726

http://www.irgrid.ac.cn/handle/1471x/64833

Idioma(s)

英语

Fonte

Liao MY; Chai CL; Yang SY; Liu ZK; Qin FG; Wang ZG .Surface morphology of ion-beam deposited carbon films under high temperature ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,2002 ,20 (6):2072-2074

Palavras-Chave #半导体材料 #ENERGY #NANOTUBES #SILICON #GROWTH
Tipo

期刊论文