The effect of the incident relative phase on the four-wave mixing field and the electromagnetically induced transparency

In a A-type system employing a two-photon pump field, a four-wave mixing field can be generated simultaneously and, hence, a closed-loop system forms. We study theoretically the effect of the relative phase between the two incident fields on the generated four-wave mixing field and the electromagnetically induced transparency. It is found that the phase of the generated four-wave mixing field is the sum of the incident relative phase and a fixed phase that is irrelative to the incident relative phase. Hence, the total phase of the closed-loop system is independent of the incident relative phase. As a result, the incident relative phase has no effect on the electromagnetically induced transparency, which is different from the case of a A-type loop system closed by a third incident field. (c) 2005 Pleiades Publishing, Inc.

High-coherence hybrid Si/III-V semiconductor lasers

The relentlessly increasing demand for network bandwidth, driven primarily by Internet-based services such as mobile computing, cloud storage and video-on-demand, calls for more efficient utilization of the available communication spectrum, as that afforded by the resurging DSP-powered coherent optical communications. Encoding information in the phase of the optical carrier, using multilevel phase modulationformats, and employing coherent detection at the receiver allows for enhanced spectral efficiency and thus enables increased network capacity. The distributed feedback semiconductor laser (DFB) has served as the near exclusive light source powering the fiber optic, long-haul network for over 30 years. The transition to coherent communication systems is pushing the DFB laser to the limits of its abilities. This is due to its limited temporal coherence that directly translates into the number of different phases that can be imparted to a single optical pulse and thus to the data capacity. Temporal coherence, most commonly quantified in the spectral linewidth Δν, is limited by phase noise, result of quantum-mandated spontaneous emission of photons due to random recombination of carriers in the active region of the laser.

In this work we develop a generically new type of semiconductor laser with the requisite coherence properties. We demonstrate electrically driven lasers characterized by a quantum noise-limited spectral linewidth as low as 18 kHz. This narrow linewidth is result of a fundamentally new laser design philosophy that separates the functions of photon generation and storage and is enabled by a hybrid Si/III-V integration platform. Photons generated in the active region of the III-V material are readily stored away in the low loss Si that hosts the bulk of the laser field, thereby enabling high-Q photon storage. The storage of a large number of coherent quanta acts as an optical flywheel, which by its inertia reduces the effect of the spontaneous emission-mandated phase perturbations on the laser field, while the enhanced photon lifetime effectively reduces the emission rate of incoherent quanta into the lasing mode. Narrow linewidths are obtained over a wavelength bandwidth spanning the entire optical communication C-band (1530-1575nm) at only a fraction of the input power required by conventional DFB lasers. The results presented in this thesis hold great promise for the large scale integration of lithographically tuned, high-coherence laser arrays for use in coherent communications, that will enable Tb/s-scale data capacities.

The effect of electric field maximum on the Rabi flopping and generated higher frequency spectra

We investigate the effect of the electric field maximum on the Rabi flopping and the generated higher frequency spectra properties by solving Maxwell-Bloch equations without invoking any standard approximations. It is found that the maximum of the electric field will lead to carrier-wave Rabi flopping (CWRF) through reversion dynamics which will be more evident when the applied field enters the sub-one-cycle regime. Therefore, under the interaction of sub-one-cycle pulses, the Rabi flopping follows the transient electric field tightly through the oscillation and reversion dynamics, which is in contrast to the conventional envelope Rabi flopping. Complete or incomplete population inversion can be realized through the control of the carrier-envelope phase (CEP). Furthermore, the generated higher frequency spectra will be changed from distinct to continuous or irregular with the variation of the CEP. Our results demonstrate that due to the evident maximum behavior of the electric field, pulses with different CEP give rise to different CWRFs, and then different degree of interferences lead to different higher frequency spectral features.

New optoelectronic devices using GaAs-GaAlAs epitaxy

Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis. They are:

1. Embedded Epitaxy

This is a technique of selective multilayer growth of GaAs- Ga_1-xAl_xAs single crystal structures through stripe openings in masking layers on GaAs substrates. This technique results in prismatic layers of GaAs and Ga_1-xAl_xAs "embedded" in each other and leads to controllable uniform structures terminated by crystal faces. The dependence of the growth habit on the orientation of the stripe openings has been studied. Room temperature embedded double heterostructure lasers have been fabricated using this technique. Threshold current densities as low as 1.5 KA/cm² have been achieved.

2. Barrier Controlled PNPN Laser Diode

It is found that the I-V characteristics of a PNPN device can be controlled by using potential barriers in the base regions. Based on this principle, GaAs-GaAlAs heterostructure PNPN laser diodes have been fabricated. GaAlAs potential barriers in the bases control not only the electrical but also the optical properties of the device. PNPN lasers with low threshold currents and high breakover voltage have been achieved. Numerical calculations of this barrier controlled structure are presented in the ranges where the total current is below the holding point and near the lasing threshold.

3. Injection Lasers on Semi-Insulating Substrates

GaAs-GaAlAs heterostructure lasers fabricated on semi-insulating substrates have been studied. Two different laser structures achieved are: (1) Crowding effect lasers, (2) Lateral injection lasers. Experimental results and the working principles underlying the operation of these lasers are presented. The gain induced guiding mechanism is used to explain the lasers' far field radiation patterns. It is found that Zn diffusion in Ga_1-xAl_xAs depends on the Al content x, and that GaAs can be used as the diffusion mask for Zn diffusion in Ga_1-xAl_xAs. Lasers having very low threshold currents and operating in a stable single mode have been achieved. Because these lasers are fabricated on semi-insulating substrates, it is possible to integrate them with other electronic devices on the same substrate. An integrated device, which consists of a crowding effect laser and a Gunn oscillator on a common semi-insulating GaAs substrate, has been achieved.

Development of Microfluidic Devices with the Use of Nanotechnology to Aid in the Analysis of Biological Systems Including Membrane Protein Separation, Single Cell Analysis, and Genetic Markers

Computation technology has dramatically changed the world around us; you can hardly find an area where cell phones have not saturated the market, yet there is a significant lack of breakthroughs in the development to integrate the computer with biological environments. This is largely the result of the incompatibility of the materials used in both environments; biological environments and experiments tend to need aqueous environments. To help aid in these development chemists, engineers, physicists and biologists have begun to develop microfluidics to help bridge this divide. Unfortunately, the microfluidic devices required large external support equipment to run the device. This thesis presents a series of several microfluidic methods that can help integrate engineering and biology by exploiting nanotechnology to help push the field of microfluidics back to its intended purpose, small integrated biological and electrical devices. I demonstrate this goal by developing different methods and devices to (1) separate membrane bound proteins with the use of microfluidics, (2) use optical technology to make fiber optic cables into protein sensors, (3) generate new fluidic devices using semiconductor material to manipulate single cells, and (4) develop a new genetic microfluidic based diagnostic assay that works with current PCR methodology to provide faster and cheaper results. All of these methods and systems can be used as components to build a self-contained biomedical device.

Generation of near-field hexagonal array illumination with a phase grating

A hexagonal array not only is a nature-preferred pattern but also is widely used in optoelectronical materials and devices. We report a simple method of hexagonal array illumination based on the Talbot effect that has a theoretical efficiency of 100%. An experimental efficiency of 90.6% with a binary phase (0, pi) hexagonal grating is given. This method should be highly interesting for applications of hexagonal array illumination in optical devices as well as in other hexagonal cells. (C) 2002 Optical Society of America.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

Near-field hexagonal array illumination based on fractional Talbot effect

Hexagonal array is a basic structure widely exists in nature and adopted by optoclectronic device. A phase plate based on the fractional Talbot effect that converts a single expanded laser beam into a regular hexagonal array of uniformly illuminated apertures with virtually 100% efficiency is presented. The uniform hexagonal array illumination with a fill factor of 1/12 is demonstrated by the computer simulation. (C) 2006 Elsevier GmbH. All rights reserved.

Chemical and Electrochemical Behavior of Graphene-Covered Silicon Photoanodes

This dissertation describes efforts over the last five years to develop protective layers for semiconductor photoelectrodes based on monolayer or few-layer graphene sheets. Graphene is an attractive candidate for a protective layer because of its known chemical inertness, transparency, ease of deposition, and limited number of electronic states. Monolayer graphene was found to effectively inhibit loss of photocurrent over 1000 seconds at n-Si/aqueous electrolyte interfaces that exhibit total loss over photocurrent over 100 seconds. Further, the presence of graphene was found to effect only partial Fermi level pinning at the Si/graphene interface with respect to a range of nonaqueous electrolytes. Fluorination of graphene was found to extend the stability imparted on n-Si by the monolayer sheet in aqueous Fe(CN)₆^3-/4- electrolyte to over 100,000 seconds. It was demonstrated that the stability of the photocurrent of n-Si/fluorinated graphene/aqueous electrolyte interfaces relative to n-Si/aqueous electrolyte interfaces is likely attributable to the inhibition of oxidation of the silicon surface.

This dissertation also relates efforts to describe and define terminology relevant to the field of photoelectrochemistry and solar fuels production. Terminology describing varying interfaces employed in electrochemical solar fuels devices are defined, and the research challenges associated with each are discussed. Methods for determining the efficiency of varying photoelectrochemical and solar-fuel-producing cells from the current-voltage behavior of the individual components of such a device without requiring the device be constructed are described, and a range of commonly employed performance metrics are explored.

Talbot effect of a high-density grating under femtosecond laser illumination

The Talbot effect of a high-density grating under femtosecond laser illumination is analyzed with rigorous electromagnetic theory which is based on the Fourier decomposition and the rigorous coupled-wave analysis (RCWA). Numerical simulations show that the contrast of the Talbot images steadily decreases as the transmitted femtosecond laser pulses propagate forward and with wider spectrum width of the femtosecond laser pulses. The Talbot images of high-density gratings have much higher sensitivity of the spectrum widths of the incident laser pulses than those of the traditional low-density gratings. In experiments, the spectrums and the pulse widths of the incident pulses are measured with a frequency-resolved optical grating (FROG) apparatus. The Talbot images are detected by using a Talbot scanning near-field optical microscopy (Talbot-SNOM) technique, which are in coincidence with the numerical simulations. This effect should be useful for developing new femtosecond laser techniques and devices. (C) 2008 Elsevier B.V. All rights reserved.

Structure-change-dependent transmittance of PtOx thin film in super-resolution near-field structure: Diffraction effect analysis

To study working mechanism of super-resolution near-field structure (super-RENS) optical disk from a far-field optics view is very necessary because of the actual far-field writing/readout process in the optical disk system. A Gaussian diffraction model based on Fresnel-Kirchhoff diffraction theory of PtOx-type super-RENS has been set up in this Letter. The relationship between micro-structural deformation (change of bubble structure and refractive index profile) with far-field optical response of PtOx thin film has been studied with it in detail. The simulation results are in good agreement with the experimental results reported in literatures with a designed configuration. These results may provide more quantitative information for better understanding of the working mechanism of metal-oxide-type super-RENS. (c) 2007 Elsevier B.V. All rights reserved.

High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3 SiO2 films

4H-silicon carbide (SiC) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with Al2O3/SiO2 (A/S) films employed as antireflection/passivation layers have been demonstrated. The devices showed a peak responsivity of 0.12 A/W at 290 nm and maximum external quantum efficiency of 50% at 280 nm under 20 V electrical bias, which were much larger than conventional MSM detectors. The redshift of peak responsivity and response restriction effect were found and analyzed. The A/S/4H-SiC MSM photodetectors were also shown to possess outstanding features including high UV to visible rejection ratio, large photocurrent, etc. These results demonstrate A/S/4H-SiC photodetectors as a promising candidate for OEIC applications. (C) 2008 American Institute of Physics.