Efficient two-step digit-set-restricted modified signed-digit algorithm based on optoelectronic shared content-addressable memory

A two-step digit-set-restricted modified signed-digit (MSD) adder based on symbolic substitution is presented. In the proposed addition algorithm, carry propagation is avoided by using reference digits to restrict the intermediate MSD carry and sum digits into {(1) over bar ,0} and {0, 1}, respectively. The algorithm requires only 12 minterms to generate the final results, and no complementarity operations for nonzero outputs are involved, which simplifies the system complexity significantly. An optoelectronic shared content-addressable memory based on an incoherent correlator is used for experimental demonstration. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Research on a scanner for tilting orthogonal double prisms

The original scanner for tilting orthogonal double prisms is studied to test the tracking performance in intersatellite laser communications. With a reduction ratio of more than 100 times from the change rate of the angle of beam deviation to that of the tilting angle of each prism, the theoretical analysis performed, as well as the verification experiment, indicates that the scanner can meet the requirements of the scanning accuracy superior to 0.5 mu rad with the scanning range greater than 500 mu rad and can facilitate the mechanical structure design. (c) 2006 Optical Society of America.

Firing Patterns of Cerebellar Purkinje Cells During Locomotion and Sleep

The cerebellum is a major supraspinal center involved in the coordination of movement. The principal neurons of the cerebellar cortex, Purkinje cells, receive excitatory synaptic input from two sources: the parallel and climbing fibers. These pathways have markedly different effects: the parallel fibers control the rate of simple sodium spikes, while the climbing fibers induce characteristic complex spike bursts, which are accompanied by dendritic calcium transients and play a key role in regulating synaptic plasticity. While many studies using a variety of species, behaviors, and cerebellar regions have documented modulation in Purkinje cell activity during movement, few have attempted to record from these neurons in unrestrained rodents. In this dissertation, we use chronic, multi-tetrode recording in freely-behaving rats to study simple and complex spike firing patterns during locomotion and sleep. Purkinje cells discharge rhythmically during stepping, but this activity is highly variable across steps. We show that behavioral variables systematically influence the step-locked firing rate in a step-phase-dependent way, revealing a functional clustering of Purkinje cells. Furthermore, we find a pronounced disassociation between patterns of variability driven by the parallel and climbing fibers, as well as functional differences between cerebellar lobules. These results suggest that Purkinje cell activity not only represents step phase within each cycle, but is also shaped by behavior across steps, facilitating control of movement under dynamic conditions. During sleep, we observe an attenuation of both simple and complex spiking, relative to awake behavior. Although firing rates during slow wave sleep (SWS) and rapid eye movement sleep (REM) are similar, simple spike activity is highly regular in SWS, while REM is characterized by phasic increases and pauses in simple spiking. This phasic activity in REM is associated with pontine waves, which propagate into the cerebellar cortex and modulate both simple and complex spiking. Such a temporal coincidence between parallel and climbing fiber activity is known to drive plasticity at parallel fiber synapses; consequently, pontocerebellar waves may provide a mechanism for tuning synaptic weights in the cerebellum during active sleep.

A hybrid-parallel framework for the nonlinear seismic analysis of very tall buildings

FRAME3D, a program for the nonlinear seismic analysis of steel structures, has previously been used to study the collapse mechanisms of steel buildings up to 20 stories tall. The present thesis is inspired by the need to conduct similar analysis for much taller structures. It improves FRAME3D in two primary ways.

First, FRAME3D is revised to address specific nonlinear situations involving large displacement/rotation increments, the backup-subdivide algorithm, element failure, and extremely narrow joint hysteresis. The revisions result in superior convergence capabilities when modeling earthquake-induced collapse. The material model of a steel fiber is also modified to allow for post-rupture compressive strength.

Second, a parallel FRAME3D (PFRAME3D) is developed. The serial code is optimized and then parallelized. A distributed-memory divide-and-conquer approach is used for both the global direct solver and element-state updates. The result is an implicit finite-element hybrid-parallel program that takes advantage of the narrow-band nature of very tall buildings and uses nearest-neighbor-only communication patterns.

Using three structures of varied sized, PFRAME3D is shown to compute reproducible results that agree with that of the optimized 1-core version (displacement time-history response root-mean-squared errors are ~〖10〗^(-5) m) with much less wall time (e.g., a dynamic time-history collapse simulation of a 60-story building is computed in 5.69 hrs with 128 cores—a speedup of 14.7 vs. the optimized 1-core version). The maximum speedups attained are shown to increase with building height (as the total number of cores used also increases), and the parallel framework can be expected to be suitable for buildings taller than the ones presented here.

PFRAME3D is used to analyze a hypothetical 60-story steel moment-frame tube building (fundamental period of 6.16 sec) designed according to the 1994 Uniform Building Code. Dynamic pushover and time-history analyses are conducted. Multi-story shear-band collapse mechanisms are observed around mid-height of the building. The use of closely-spaced columns and deep beams is found to contribute to the building's “somewhat brittle” behavior (ductility ratio ~2.0). Overall building strength is observed to be sensitive to whether a model is fracture-capable.

Feedback communication using orthogonal signals

This research is concerned with block coding for a feedback communication system in which the forward and feedback channels are independently disturbed by additive white Gaussian noise and average power constrained. Two coding schemes are proposed in which the messages to be coded for transmission over the forward channel are realized as a set of orthogonal waveforms. A finite number of forward and feedback transmissions (iterations) per message is made. Information received over the feedback channel is used to modify the waveform transmitted on successive forward iterations in such a way that the expected value of forward signal energy is zero on all iterations after the first. Similarly, information is sent over the feedback channel in such a way that the expected value of feedback signal energy is also zero on all iterations after the first. These schemes are shown to achieve a lower probability of error than the best one-way coding scheme at all rates up to the forward channel capacity, provided only that the feedback channel capacity be greater than the forward channel capacity. These schemes make more efficient use of the available feedback power than existing feedback coding schemes, and therefore require less feedback power to achieve a given error performance.

Activity patterns of Kemp's ridley turtles, Lepidochelys kempii, in the coastal waters of the Cedar Keys, Florida

Radio and sonic telemetry were used to investigate the tidal orientation, rate of movement (ROM), and surfacing behavior of nine Kemp's ridley turtles, Lepidochelys kempii, tracked east of the Cedar Keys, Florida. The mean of mean turtle bearings on incoming (48 ± 49 0) and falling (232 ± 41 0) tides was significantly oriented to the mean directions of tidal flow (37±9°, P<0.0025, and 234±9 0, P<0.005, respectively). Turtles had a mean ROM of 0.44±0.33 km/h (range: 0.004-1.758 km/h), a mean surface duration of 18± 15 s (range: 1-88 s), and a mean submergence duration of 8.4± 6.4 min (range: 0.2-60.0 min). ROM was negatively correlated with surface and submergence durations and positively correlated with the number of surfacings. Furthermore, ROMs were higher and surface and submergence durations were shorter during the day. Daily activities of turtles were attributed to food acquisition and bioenergetics.

Effect of elliptical manufacture error of an axicon on the diffraction-free beam patterns

Based on the generalized Huygens-Fresnel diffraction integral theory and the stationary-phase method, we analyze the influence on diffraction-free beam patterns of an elliptical manufacture error in an axicon. The numerical simulation is compared with the beam patterns photographed by using a CCD camera. Theoretical simulation and experimental results indicate that the intensity of the central spot decreases with increasing elliptical manufacture defect and propagation distance. Meanwhile, the bright rings around the central spot are gradually split into four or more symmetrical bright spots. The experimental results fit the theoretical simulation very well. (C) 2008 Society of Photo-Optical Instrumentation Engineers.

Read-only memory disk with AgOx and AgInSbTe superresolution mask layer

Two novel read-only memory (ROM) disks, one with an AgOx mask layer and the other with an AgInSbTe mask layer, are proposed and studied. The AgOx and the AgInSbTe films sputtered on the premastered substrates with pit depths of 50 nm and pit lengths (space) of 380 nm are studied by atomic force microscopy. Disk readout measurement is carried out using a dynamic setup with a laser wavelength of 632.8 nm and an object lens numerical aperture (NA) of 0.40. Results show that the superresolution effect happens only at a suitable oxygen flow ratio for the AgOx ROM disk. The best superresolution readout effect is achieved at an oxygen flow ratio of 0.5 with the smoothest film surface. Compared with the AgOx ROM disk, the AgInSbTe ROM disk has a much smoother film surface and better superresolution effect. A carrier-to-noise ratio (CNR) of above 40 dB can be obtained at an appropriate readout power and readout velocity. The readout CNR of both the AgOx and AgInSbTe ROM disks have a nonlinear dependence on the readout power. The superresolution readout mechanisms for these ROM disks are analyzed and compared as well. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Read-only memory disk with AgOx super-resolution mask layer

A novel read-only memory (ROM) disk with an AgOx mask layer was proposed and studied in this letter. The AgOx films sputtered on the premastered substrates, with pits depth of 50 nm and pits length of 380 nm, were studied by an atomic force microscopy. The transmittances of these AgOx films were also measured by a spectrophotometer. Disk measurement was carried out by a dynamic setup with a laser wavelength of 632.8 nm and a lens numerical aperture (NA) of 0.40. The readout resolution limit of this setup was λ/(4NA) (400 nm). Results showed that the super-resolution readout happened only when the oxygen flow ratios were at suitable values for these disks. The best super-resolution performance was achieved at the oxygen flow ratio of 0.5 with the smoothest film surface. The super-resolution readout mechanism of these ROM disks was analyzed as well.

Molecular ecology of european mustelids: Unraveling evolutionary and ecological patterns in Martes and Lutra genera

208 p.

Read-only memory disk with AgOx and AgInSbTe superresolution mask layer

Two novel read-only memory (ROM) disks, one with an AgOx mask layer and the other with an AgInSbTe mask layer, are proposed and studied. The AgOx and the AgInSbTe films sputtered on the premastered substrates with pit depths of 50 nm and pit lengths (space) of 380 nm are studied by atomic force microscopy. Disk readout measurement is carried out using a dynamic setup with a laser wavelength of 632.8 nm and an object lens numerical aperture (NA) of 0.40. Results show that the superresolution effect happens only at a suitable oxygen flow ratio for the AgOx ROM disk. The best superresolution readout effect is achieved at an oxygen flow ratio of 0.5 with the smoothest film surface. Compared with the AgOx ROM disk, the AgInSbTe ROM disk has a much smoother film surface and better superresolution effect. A carrier-to-noise ratio (CNR) of above 40 dB can be obtained at an appropriate readout power and readout velocity. The readout CNR of both the AgOx and AgInSbTe ROM disks have a nonlinear dependence on the readout power. The superresolution readout mechanisms for these ROM disks are analyzed and compared as well. (c) 2005 Society of Photo-Optical Instrumentation Engineers.

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

The dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/g K, 1.85 mm(2)/s, and 4.0 W/m K at 300 K to 0.025 J/g K, 1.475 mm(2)/s, and 0.25 W/m K at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm(2)/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/m K at 440 K. Whether in the crystalline or amorphous state, Ag8In14Sb55Te23 are more thermally active than Ge2Sb2Te5, that is, the Ag8In14Sb55Te23 composites bear stronger thermal conduction and diffusion than the Ge2Sb2Te5 phase-change memory materials.