Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

The dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials in crystalline and amorphous states on temperature was measured and analyzed. The results show that in the crystalline state, the thermal properties monotonically decrease with the temperature and present obvious crystalline semiconductor characteristics. The heat capacity, thermal diffusivity, and thermal conductivity decrease from 0.35 J/g K, 1.85 mm(2)/s, and 4.0 W/m K at 300 K to 0.025 J/g K, 1.475 mm(2)/s, and 0.25 W/m K at 600 K, respectively. In the amorphous state, while the dependence of thermal properties on temperature does not present significant changes, the materials retain the glass-like thermal characteristics. Within the temperature range from 320 K to 440 K, the heat capacity fluctuates between 0.27 J/g K and 0.075 J/g K, the thermal diffusivity basically maintains at 0.525 mm(2)/s, and the thermal conductivity decreases from 1.02 W/m K at 320 K to 0.2 W/m K at 440 K. Whether in the crystalline or amorphous state, Ag8In14Sb55Te23 are more thermally active than Ge2Sb2Te5, that is, the Ag8In14Sb55Te23 composites bear stronger thermal conduction and diffusion than the Ge2Sb2Te5 phase-change memory materials.

Selected topics in financial engineering: first-exit times and dependence structures of Marshall-Olkin Kind

146 p.

Gain Scheduling Control of an Islanded Microgrid Voltage

The aim of this research study has been to design a gain scheduling (GS) digital controller in order to control the voltage of an islanded microgrid in the presence of fast varying loads (FVLs), and to compare it to a robust controller. The inverter which feeds the microgrid is connected to it through an inductance-capacitor-inductance (LCL) filter. The oscillatory and nonlinear behaviour of the plant is analyzed in the whole operating zone. Afterwards, the design of the controllers which contain two loops in cascade are described. The first loop concerns the current control, while the second is linked to the voltage regulation. Two controllers, one defined as Robust and another one as GS controller, are designed for the two loops, emphasizing in their robustness and their ability to damp the oscillatory plant behaviour. To finish, some simulations are carried out to study and compare the two kinds of controllers in different operating points. The results show that both controllers damp the oscillatory behaviour of the plant in closed loop (CL), and that the GS controller ensures a better rejection of current disturbances from FVLs.

Mechanisms and concentrations dependence of up-conversion luminescence in Tm3+/Yb3+ codoped oxyfluoride glass-ceramics

The up-conversion properties of Tm3+/Yb3+ codoped oxyfluoride glass-ceramics under 980 nm excitation were investigated. Intense blue up-conversion luminescence due to the Tm3+: (1)G(4) -> H-3(6) transition was observed in the glass-ceramics. The intensity of the blue up-conversion luminescence in a 1 mol% YbF3-containing glass-ceramic was found to be about 40 times stronger than that in the precursor oxyfluoride glass. The up-conversion mechanism is proposed. The reason for the intense Tm3+ up-conversion luminescence in the oxyfluoride glass-ceramics and the concentrations dependence of upconversion luminescence are also discussed. (c) 2005 Elsevier B.V. All rights reserved.

Temperature dependence of femtosecond laser induced refractive index change in Nd3+-doped phosphate glass

We report refractive index change in a femtosecond laser irradiated Nd3+-doped phosphate glass. The effects of annealing temperature on the refractive index change of the glass have been investigated. Absorption spectra of the glass sample before and after femtosecond laser irradiation and subsequent annealing were measured. The results indicate that multiphoton absorption can undertake although there are intrinsic absorption for the glass in irradiation wavelength. The results may be useful for fabrication of three-dimensional integrated optics devices and waveguide laser devices in this glass. (c) 2004 Elsevier B.V. All rights reserved.

Temperature dependence of the 1.03 mu m stimulated emission cross section of Cr : Yb : YAG crystal

The fluorescence emission spectra of Cr:Yb:YAG crystal are measured and the effective stimulated emission cross section of the crystal are obtained from -80 degrees C to +80 degrees C. A linear temperature dependence between -80 degrees C and +80 degrees C is reported for the 1.03 mu m peak stimulated emission cross section of Cr:Yb:YAG crystal. (c) 2004 Elsevier B.V. All rights reserved.

Temperature dependence of the 1.064-mu m stimulated emission cross-section of Cr : Nd : YAG crystal

The fluorescence emission spectra of Cr:Nd:YAG crystal are measured and the effective stimulated emission cross-section of the crystal is obtained from -80 to +80 degrees C. A linear temperature dependence between -80 and +80 degrees C is reported for the 1.064-mu m peak stimulated emission cross-section of Cr:Nd:YAG crystal. (C) 2005 Elsevier Ltd. All rights reserved.

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.

CGP37157, an inhibitor of the mitochondrial Na+/Ca2+ exchanger, protects neurons from excitotoxicity by blocking voltage-gated Ca2+ channels

Inhibition of the mitochondrial Na+/Ca2+ exchanger (NCLX) by CGP37157 is protective in models of neuronal injury that involve disruption of intracellular Ca2+ homeostasis. However, the Ca2+ signaling pathways and stores underlying neuroprotection by that inhibitor are not well defined. In the present study, we analyzed how intracellular Ca2+ levels are modulated by CGP37157 (10 mu M) during NMDA insults in primary cultures of rat cortical neurons. We initially assessed the presence of NCLX in mitochondria of cultured neurons by immunolabeling, and subsequently, we analyzed the effects of CGP37157 on neuronal Ca2+ homeostasis using cameleon-based mitochondrial Ca2+ and cytosolic Ca2+ ([Ca2+](i)) live imaging. We observed that NCLX-driven mitochondrial Ca2+ exchange occurs in cortical neurons under basal conditions as CGP37157 induced a decrease in [Ca-2](i) concomitant with a Ca2+ accumulation inside the mitochondria. In turn, CGP37157 also inhibited mitochondrial Ca2+ efflux after the stimulation of acetylcholine receptors. In contrast, CGP37157 strongly prevented depolarization-induced [Ca2+](i) increase by blocking voltage-gated Ca2+ channels (VGCCs), whereas it did not induce depletion of ER Ca2+ stores. Moreover, mitochondrial Ca2+ overload was reduced as a consequence of diminished Ca2+ entry through VGCCs. The decrease in cytosolic and mitochondrial Ca2+ overload by CGP37157 resulted in a reduction of excitotoxic mitochondrial damage, characterized here by a reduction in mitochondrial membrane depolarization, oxidative stress and calpain activation. In summary, our results provide evidence that during excitotoxicity CGP37157 modulates cytosolic and mitochondrial Ca2+ dynamics that leads to attenuation of NMDA-induced mitochondrial dysfunction and neuronal cell death by blocking VGCCs.