Microscale thermal engineering of electronic systems

The electronics industry is encountering thermal challenges and opportunities with lengthscales comparable to or much less than one micrometer. Examples include nanoscale phonon hotspots in transistors and the increasing temperature rise in onchip interconnects. Millimeter-scale hotspots on microprocessors, resulting from varying rates of power consumption, are being addressed using two-phase microchannel heat sinks. Nanoscale thermal data storage technology has received much attention recently. This paper provides an overview of these topics with a focus on related research at Stanford University.

Thermal control of electronics: Perspectives and prospects

One of the most prominent industrial applications of heat transfer science and engineering has been electronics thermal control. Driven by the relentless increase in spatial density of microelectronic devices, integrated circuit chip powers have risen by a factor of 100 over the past twenty years, with a somewhat smaller increase in heat flux. The traditional approaches using natural convection and forced-air cooling are becoming less viable as power levels increase. This paper provides a high-level overview of the thermal management problem from the perspective of a practitioner, as well as speculation on the prospects for electronics thermal engineering in years to come.

Thermal Noise Behavior of the Bridge Circuit

This paper considers a connection between the deterministic and noisy behavior of nonlinear networks. Specifically, a particular bridge circuit is examined which has two possibly nonlinear energy storage elements. By proper choice of the constitutive relations for the network elements, the deterministic terminal behavior reduces to that of a single linear resistor. This reduction of the deterministic terminal behavior, in which a natural frequency of a linear circuit does not appear in the driving-point impedance, has been shown in classical circuit theory books (e.g. [1, 2]). The paper shows that, in addition to the reduction of the deterministic behavior, the thermal noise at the terminals of the network, arising from the usual Nyquist-Johnson noise model associated with each resistor in the network, is also exactly that of a single linear resistor. While this result for the linear time-invariant (LTI) case is a direct consequence of a well-known result for RLC circuits, the nonlinear result is novel. We show that the terminal noise current is precisely that predicted by the Nyquist-Johnson model for R if the driving voltage is zero or constant, but not if the driving voltage is time-dependent or the inductor and capacitor are time-varying

PILT Threshold 1

Files used for and during the Threshold 1 workshop

PILT Threshold 2

Files used for and during the Threshold 2 workshop

Uso del test de cuantificación sensitiva para el estudio de la neuropatía de fibra pequeña

Introducción La mutación genética Val30Met de la proteína transtiretina (TTR) es causante de la polineuropatía amiloidótica familiar, comprometiendo en fases iniciales las fibras nerviosas pequeñas (mielinizadas Aδ y amielínicas tipo C), involucradas en funciones autonómicas, nocicepción, percepción térmica y sudoración. Los métodos neurofisiológicos convencionales, no logran detectar dichas anormalidades, retardando el inicio de tratamientos específicos para la enfermedad. Metodología El objetivo principal fue evaluar el test de cuantificación sensitiva (QST) como método de detección temprana de anormalidades de fibra pequeña, en individuos Val30Met, seguidos en el Hospital Universitario Santa María, Lisboa. Se clasificaron los pacientes en 3 grupos, según sintomatología y examen neurológico. Se analizaron los umbrales para percepción de frío, dolor con el calor y vibración en los grupos, en correlación con controles sanos. Resultados 18 registros de controles sanos y 33 de individuos con la mutación, divididos en asintomáticos (24,2%), sintomáticos con examen neurológico normal (42,4%) y sintomáticos con examen neurológico anormal (33,3%). No se encontraron diferencias entre los pacientes asintomáticos y los controles. Los umbrales para frío (p=0,042) y en el dolor intermedio con el calor (HP 5) (p=0,007) se encuentran elevados en individuos Val30Met sintomáticos con examen normal. En los pacientes sintomáticos con alteraciones al examen, también se presentaron alteraciones en el intervalo entre el inicio y el dolor intermedio con el calor (HP 5-0,5) (p=0,009). Discusión Los umbrales de frío y de percepción de dolor con el calor, permiten detectar anormalidades en personas con la mutación TTR Val30Met, sintomáticos, incluyendo aquellos sin cambios objetivos al examen neurológico.

Student support materials por AQA A2 Physics : unit 5 nuclear and thermal physics and option units.

Libro de apoyo a los alumnos de bachillerato en el área de la Física. Abarca los siguientes temas: radioactividad, energía nuclear, física térmica, astrofísica, física médica, física aplicada e hitos en la historia de la física. Incluye también una sección para la preparación de los exámenes oficiales con ayudas sobre el funcionamiento de la ciencia, el uso de algoritmos y logaritmos, datos y fórmulas, preguntas similares a los exámenes oficiales, y respuestas, explicaciones y consejos para la superación de las pruebas.

Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation

A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions

Relaxation and derelaxation of pure and hydrogenated amorphous silicon during thermal annealing experiments

The structural relaxation of pure amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) materials, that occurs during thermal annealing experiments, has been analyzed by Raman spectroscopy and differential scanning calorimetry. Unlike a-Si, the heat evolved from a-Si:H cannot be explained by relaxation of the Si-Si network strain but it reveals a derelaxation of the bond angle strain. Since the state of relaxation after annealing is very similar for pure and hydrogenated materials, our results give strong experimental support to the predicted configurational gap between a-Si and crystalline silicon

A comparison of physical measurements of pure-tones, third-octave bands of noise and third-octave bands of speech to subjective judgments of audibility threshold, MCL and UCL for three normally hearing listeners

This study investigates the relation between physical measurements of pure-tones, third-octave bands of noise and third-octave bands of speech and subjective judgments of auditory threshold, most-comfortable listening level (MCL) and uncomfortable-listening level (UCL) for three normally hearing listeners.

The reliability and validity of monitored connected discourse as a test of the threshold of intelligibility

This paper discusses a study undertaken to determine whether a normal hearing person or hearing impaired person can reliably select a threshold of intelligibility and if so, whether this can be considered a valid measurement.

A study of threshold and loudness summation in listeners with sensorineural hearing impairments

This paper investigates loudness summation in a group of listeners with moderate to severe hearing losses and the applicability of this information to hearing aid fittings.