Self-organized hexagonal ordering of quantum dot arrays

We report a structure of (In, Ga)As/GaAs quantum dots which are vertically correlated and laterally aligned in a hexagonal way thus forming three-dimensionally ordered arrays. The growth pathway is based on a mechanism of self-assembly by strain-mediated multilayer vertical stacking on a planar GaAs(100) substrate, rather than molecular-beam epitaxy on a prepatterned substrate. The strain energy of lateral island-island interaction is minimum for the arrangement of hexagonal ordering. However, realization of hexagonal ordering not only depends on a complicated trade-off between lateral and vertical island-island interaction but is also related to a delicate and narrow growth kinetics window.

Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs

Periodical alignment of the InAs dots along the < 100 > and < 110 > directions was observed on an elastically relaxed InGaAs buffer layer grown at 500 and 450 degrees C, respectively, on the vicinal GaAs(001) substrate. Due to alignment along these directions, the InAs dots were arranged into a quasi-two-dimensional hexagonal lattice. Such a periodical arrangement of InAs dots may be explained in terms of modulation in strain as well as composition along [110] as observed by using cross-sectional transmission electron microscopy.

Efficiently producing single-walled carbon nanotube rings and investigation of their field emission properties

Single-walled carbon nanotube (SWNT) rings with a diameter of about 100 nm have been prepared by thermally decomposing hydrocarbon in a floating catalyst system. These rings appeared to consist mostly of SWNT toroids. High resolution transmission electron microscopy showed that these rings were composed of tens of SWNTs with a tightly packed arrangement. The production of SWNT rings was improved through optimizing various growth parameters, such as growth temperature, sublimation temperature of the catalyst, different gas flows and different catalyst components. The growth mechanism of the SWNT rings is discussed. In the field emission measurements we found that field emission from a halved ring is better than that from a whole SWNT ring, which contributed to the better emission from two opened ends of the nanotubes of the halved SWNT ring.

Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces

Two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(311)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows deferring from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-xAs solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [01 (1) over bar] and [(2) over bar 33], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between neighbouring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. Photoluminescence (PL) result demonstrates that QDs grown on (311)B have the narrowest linewidth and the strongest integrated intensity, compared to those grown on (100) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces

The two-dimensional (2D) ordering of self-assembled InxGa1-xAs quantum dots (QDs) fabricated on GaAs(3 1 1)B surface by molecular beam epitaxy (MBE) are reported. The QDs are aligned into rows differing from the direction of the misorientation of the substrate, and strongly dependent on the mole In content x of InxGa1-As-x solid solution. The ordering alignment deteriorates significantly as the In content is increased to above 0.5. The 2D ordering can be described as a centered rectangular unit mesh with the two sides parallel to [0 1 (1) over bar] and [(2) over bar 3 3], respectively. Their relative arrangement seems to be determined by a combination of the strongly repulsive elastic interaction between the neighboring islands and the minimization of the strain energy of the whole system. The ordering also helps to improve the size homogeneity of the InGaAs islands. The photoluminescence (PL) result demonstrates that QDs grown on (3 1 1)B have the narrowest linewidth and the strongest integrated intensity, compared to those on (1 0 0) and other high-index planes under the same condition. (C) 1999 Elsevier Science B.V. All rights reserved.

Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy

InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP substrates were grown by solid source molecular beam epitaxy (MBE) using the Stranski-Krastanow mode. Preliminary characterizations have been performed using photoluminescence and transmission electron microscopy. The geometrical arrangement of the quantum dots is found to be strongly dependent on the amount of coverage. At low deposition thickness. InAs QDs are arranged in chains along [1(1) over bar0$] directions. Luminescence from the quantum dots and the wetting layer consisting of quantum wells with well widths of 1, 2, and 3 monolayers is observed. (C) 1998 American Institute of Physics.

Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots

The influence of interdot electronic coupling on photoluminescence (PL) spectra of self-assembled InAs/GaAs quantum dots (QDs) has been systematically investigated combining with the measurement of transmission electron microscopy. The experimentally observed fast red-shift of PL energy and an anomalous reduction of the linewidth with increasing temperature indicate that the QD ensemble can be regarded as a coupled system. The study of multilayer vertically coupled QD structures shows that a red-shift of PL peak energy and a reduction of PL linewidth are expected as the number of QD layers is increased. On the other hand, two layer QDs with different sizes have been grown according to the mechanism of a vertically correlated arrangement. However, only one PL peak related to the large QD ensemble has been observed due to the strong coupling in InAs pairs. A new possible mechanism to reduce the PL linewidth of QD ensemble is also discussed.

The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105

Thick GaN films were grown on sapphire in a home-made vertical HVPE reactor. Effect of nucleation treatments on the properties of GaN films was investigated, including the nitridation of sapphire, low temperature GaN buffer and MOCVD-template. Various material characterization techniques, including AFM, SEM, XRD, CL and PL have been used to assess these GaN epitaxial films. It was found that the surface of sapphire after high temperature nitridation was flat and showed high density nucleation centers. In addition, smooth Ga-polarity surface of epitaxial layer can be obtained on the nitridation sapphire placed in air for several days due to polarity inversion. This may be caused by the atoms re-arrangement because of oxidation. The roughness of N-polarity film was caused by the huge inverted taper domains, which can penetrate up to the surface. The low temperature GaN buffer gown at 650 degrees C is favorable for subsequent epitaxial film, which had narrow FWHM of 307 arcsec. The epitaxial growth on MOCVD-template directly came into quasi-2D growth mode due to enough nucleation centers, and high quality GaN films were acquired with the values of the FWHM of 141 arcsec for (002) reflections. After etching in boiled KOH, that the total etch-pit density was only 5 x 106 cm(-2) illustrated high quality of the thick film on template. The photoluminescence spectrum of GaN film on the MOCVD-template showed the narrowest line-width of the band edge emission in comparison with other two growth modes.

大型制冷机组的冲洗与调试

大型制冷机组部件众多，管路比较复杂，又是必须承受高压的容器，安装、调试都有严格的要求。以30HXC165A制冷机组的现场冲洗、调试为例，详细介绍了大型制冷机组在试运行之前标准的准备工作。这些工作包括吹扫、试压、排污、充注制冷剂和冲洗调试等全部过程及注意事项。本文为大型螺杆式制冷机组这种压力容器设备的运行和维护管理提供了工程实践经验。结果表明：在施工调试过程中，只有各方互相协调，并且严格按照相关文件和规范要求才能顺利完成制冷机组的安装调试，为以后的正常运行打下基础。

Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks

Time-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of similar to 40 Ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks.

The structures and transformations on Si(113) surface

The surface structures of the Si(113)-(1 X 1), Si(113)-(3 X 1) and Si(113)-(3 X 2) have been studied theoretically by means of an ab initio quantum chemical CNDO method. We address not only the importance of the surface energy but also the energy minimization and the barrier height in the different structural conversion. We found that (1) the relaxed Si(113)-(1 X 1) structure. (2) the Si(113)-(3 X 1) close to the Si(113) Ranke (3 X 1)-2 model; (3) the atomic positions of Si(113)-(3 X 2) corrugated arrangement. (C) 1997 Elsevier Science B.V.

Optimization of Global Signal Networks for Island-Style FPGAs

We present a staggered buffer connection method that provides flexibility for buffer insertion while designing global signal networks using the tile-based FPGA design methodology. An exhaustive algorithm is used to analyze the trade-off between area and speed of the global signal networks for this staggered buffer insertion scheme, and the criterion for determining the design parameters is presented. The comparative analytic result shows that the methods in this paper are proven to be more efficient for FPGAs with a large array size.

Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots

The influence of interdot electronic coupling on photoluminescence (PL) spectra of self-assembled InAs/GaAs quantum dots (QDs) has been systematically investigated combining with the measurement of transmission electron microscopy. The experimentally observed fast red-shift of PL energy and an anomalous reduction of the linewidth with increasing temperature indicate that the QD ensemble can be regarded as a coupled system. The study of multilayer vertically coupled QD structures shows that a red-shift of PL peak energy and a reduction of PL linewidth are expected as the number of QD layers is increased. On the other hand, two layer QDs with different sizes have been grown according to the mechanism of a vertically correlated arrangement. However, only one PL peak related to the large QD ensemble has been observed due to the strong coupling in InAs pairs. A new possible mechanism to reduce the PL linewidth of QD ensemble is also discussed.

Electron trapping materials for use in a picosecond infrared streak camera

We describe our research on the employment of an infrared upconversion screen made of electron trapping material (ETM) in combination with the high sensitivity of the S-20 photocathode responsive to visible radiation to produce a streak camera arrangement capable of viewing and recording infrared incident pulses. The ETM-based upconversion screen converts 800-1600 nm infrared radiation to visible light which is viewed or recorded by the S-20 photocathode. The peak values of the upconversion efficiency are located at 1165 nm for CaS:Eu, Sm and 1060 nm for CaS:Ce, Sm. The present experiment showed time resolution was 12.3 ps for a CaS:Eu, Sm screen and 8.4 ps for a CaS:Ce, Sm screen. The minimum detectability is 4.8 x 10(-9) J/mm(2) (minimum detectability of the coupled visible streak camera is 8.3x10(-10) J/mm(2)). Other parameters, such as spatial resolution and dynamic range, have also been measured and analyzed. The results show ETM can be used in the measurement of infrared ultrafast phenomena up to picosecond time domain. In consideration of the limited number of trapped electrons in ETM, the infrared-sensitive streak camera consisting of an ETM-based upconversion screen is suitable to operate in the single shot mode. (C) 1999 American Institute of Physics. [S0034-6748(99)00112-4].

Numerical simulation of a bubble rising in shear-thinning fluids

The motion of a single bubble rising freely in quiescent non-Newtonian viscous fluids was investigated experimentally and computationally. The non-Newtonian effects in the flow of viscous inelastic fluids are modeled by the Carreau theological model. An improved level set approach for computing the incompressible two-phase flow with deformable free interface is used. The control volume formulation with the SIMPLEC algorithm incorporated is used to solve the governing equations on a staggered Eulerian grid. The simulation results demonstrate that the algorithm is robust for shear-thinning liquids with large density (rho(1)/rho(g) up to 10(3)) and high viscosity (eta(1)/eta(g) up to 10(4)). The comparison of the experimental measurements of terminal bubble shape and velocity with the computational results is satisfactory. It is shown that the local change in viscosity around a bubble greatly depends on the bubble shape and the zero-shear viscosity of non-Newtonian shear-thinning liquids. The shear-rate distribution and velocity fields are used to elucidate the formation of a region of large viscosity at the rear of a bubble as a result of the rather stagnant flow behind the bubble. The numerical results provide the basis for further investigations, such as the numerical simulation of viscoelastic fluids. (C) 2010 Elsevier B.V. All rights reserved.