Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction

A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. In this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. This structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. Low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of Si:GaAs/C:GaAs tunnel junctions, GaAs/InGaAs strain quantum well active regions. External differential quantum efficiency as high as 2.2 and light power output of 2.5 W per facet (under 2A drive current) are achieved from an uncoated novel laser device with three active regions.

Synthesis and characterization of an active styrlthiophene monomer and its polyurethane with second-order optical nonlinearity

A novel monomer, (trans)-7-[4-N,N-(di-beta-hydroxyethyl) amino-benzene]-ethenyl-3,5-dinitrothiophene (HBDT), and the corresponding prepolymer, polyurethane were synthesized and characterized. The details of synthesis of the monomer and its further polymerization were presented. The prepolymer and polyurethane exhibited good thermal stability and good solubility in common organic solvents. The d(33) coefficient of the poled films was determined to be 40.3 pm/V. (C) 2000 Kluwer Academic Publishers.

High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

We report on the material growth and fabrication of high-performance 980-nm strained quantum-well lasers employing a hybrid material system consisting of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in flexibility of laser design, simple epitaxial growth, and improvement of surface morphology and laser performance. The as-grown InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.95 eV) lasers achieve a low threshold current density of 150 A/cm(2) (at a cavity length of 1500 mu m), internal quantum efficiency of similar to 95%, and low internal loss of 1.8 cm(-1). Both broad-area and ridge-waveguide laser devices are fabricated. For 100-mu m-wide stripe lasers with a cavity length of 800 Irm, a slope efficiency of 1.05 W/A and a characteristic temperature coefficient (T-0) of 230 K are achieved. The lifetime test demonstrates a reliable performance. The comparison with our fabricated InGaAs-InGaAsP(1.6 eV)-AlGaAs(1.87 eV) lasers and Al-free InGaAs-InGaAsP (1.6 eV)-InGaP lasers are also given and discussed. The selective etching between AlGaAs and InGaAsP is successfully used for the formation of a ridge-waveguide structure. For 4-mu m-wide ridge-waveguide laser devices, a maximum output power of 350 mW is achieved. The fundamental mode output power can be up to 190 mW with a slope efficiency as high as 0.94 W/A.

Design of Low Power Multi-Standard Active-RC Filter for WLAN and DVB-H

In this paper, a low-power, highly linear, integrated, active-RC filter exhibiting a multi-standard (IEEE 802.11a/b/g and DVB-H) application and bandwidth (3MHz, 4MHz, 9.5MHz) is present. The filter exploits digitally-controlled polysilicon resister banks and an accurate automatic tuning scheme to account for process and temperature variations. The automatic frequency calibration scheme provides better than 3% corner frequency accuracy. The Butterworth filter is design for receiver (WLAN and DVB-H mode) and transmitter (WLAN mode). The filter dissipation is 3.4 mA in RX mode and 2.3 mA (only for one path) in TX mode from 2.85-V supply. The dissipation of calibration consumes 2mA. The circuit has been fabricated in a 0.35um 47-GHz SiGe BiCMOS technology, the receiver and transmitter occupy 0.28-mm(2) and 0.16-mm(2) (calibration circuit excluded), respectively.

measuring acoustic wave transit time in furnace based on active acoustic source signal

Accurate measurement of transit time for acoustic wave between two sensors installed on two sides of a furnace is a key to implementing the temperature field measurement technique based on acoustical method. A new method for measuring transit time of acoustic wave based on active acoustic source signal is proposed in this paper, which includes the followings: the time when the acoustic source signal arrives at the two sensors is measured first; then, the difference of two arriving time arguments is computed, thereby we get the transit time of the acoustic wave between two sensors installed on the two sides of the furnace. Avoiding the restriction on acoustic source signal and background noise, the new method can get the transit time of acoustic wave with higher precision and stronger ability of resisting noise interference.

network and device-level impacts: performance and reliability of active i/o storage systems

中国计算机学会

Large and negative lateral displacement in an active dielectric slab configuration

We investigate the large negative lateral displacements of TE polarized light beams reflected from or transmitted through an active slab surrounded by transparent medium. The large negative displacements can be achieved when the incidence angle of the beam is less than but close to the critical angle for total reflection. It is also shown that both the reflectivity and transmissivity of the beam that correspond to the large negative displacements can be enhanced by active medium. These phenomena may lead to convenient measurements and interesting applications in optical devices. (c) 2006 Elsevier B.V. All rights reserved.

Broadly tunable SOA-based active mode-locked fibre ring laser by forward injection optical pulse

We present a broadly tunable active mode- locked. bre ring laser based on a semiconductor optical ampli. er ( SOA), with forward injection optical pulses. The laser can generate pulse sequence with pulsewidth about 12 ps and high output power up to 8.56dBm at 2.5 GHz stably. Incorporated with a wavelength- tunable optical bandpass. lter, the pulse laser can operate with a broad wavelength tunable span up to 37nm with almost constant pulsewidth. A detailed experimental analysis is also carried out to investigate the relationship between the power of the internal cavity and the pulsewidth of the output pulse sequence. The experimental con. guration of the pulse laser is very simple and easy to setup with no polarization- sensitive components.

FET ACTIVE SLOTLINE NOTCH ANTENNAS FOR QUASI-OPTICAL POWER COMBINING

A new active antenna structure with applications in quasi-optical power combining is described. The active antenna combines a slotline FET oscillator with a notch antenna. The new structure was successfully used to create both E-plane and H-plane linear arrays as well as a 2-D array. Preliminary results of radiation patterns and the power combining efficiencies of the arrays are discussed.

Influence of the semi-insulating GaAs Schottky pad on the Schottky barrier in the active layer

The influence of the sidegate voltage on the Schottky barrier in the ion-implanted active layer via the Schottky pad on the semi-insulating GaAs substrate was observed, and the mechanism for such an influence was proposed. (C) 1996 American Institute of Physics.