Formation And Electrical Properties Of Polyacrylonitrile Thin Films Prepared By Plasma - Polymerisation

Due to the great versatility of the properties of polymer thin films, special interest has been taken in recent years on their preparation and electrical properties. The present thesis is entirely devoted to the study of the formation, structure and electrical properties of plasma» polymerised polyacrylonitrile (PAN) thin films. Eventhough the studies are confined to a single polymer film, the results in general are applicable to similar polar polymer films.

“Reconstruction of Gene Regulatory Network from Expression Profile of Plasma RNA Data of Colorectal Cancer Patients using Soft Computing Techniques”

Microarray data analysis is one of data mining tool which is used to extract meaningful information hidden in biological data. One of the major focuses on microarray data analysis is the reconstruction of gene regulatory network that may be used to provide a broader understanding on the functioning of complex cellular systems. Since cancer is a genetic disease arising from the abnormal gene function, the identification of cancerous genes and the regulatory pathways they control will provide a better platform for understanding the tumor formation and development. The major focus of this thesis is to understand the regulation of genes responsible for the development of cancer, particularly colorectal cancer by analyzing the microarray expression data. In this thesis, four computational algorithms namely fuzzy logic algorithm, modified genetic algorithm, dynamic neural fuzzy network and Takagi Sugeno Kang-type recurrent neural fuzzy network are used to extract cancer specific gene regulatory network from plasma RNA dataset of colorectal cancer patients. Plasma RNA is highly attractive for cancer analysis since it requires a collection of small amount of blood and it can be obtained at any time in repetitive fashion allowing the analysis of disease progression and treatment response.

Nd:Glass Laser-Induced Damage To Thin Films, Two-Photon Excited Fluorescence And Plasma Studies

Laser-induced damage is the principal limiting constraint in the design and operation of high-power laser systems used in fusion and other high-energy laser applications. Therefore, an understanding of the mechanisms which cause the radiation damage to the components employed in building a laser and a knowledge of the damage threshold of these materials are of great importance in designing a laser system and to operate it without appreciable degradation in performance. This thesis, even though covers three distinct problems for investigations using a dye Q-switched multimode Nd:glass laser operating at 1062 nm and emitting 25 ns (FWHM) pulses, lays its main thrust on damage threshold studies on thin films. Using the same glass laser two-photon excited fluorescence in rhodamine 6G and generation and characterisation of a carbon plasma have also been carried out.

Studies an Optical and X-ray Emission Processes in Laser Produced Plasma

Developments in laser technology over the past few years have made it possible to do experiments with focused intensities of IO"-102' Wcm'z. Short-pulse high-intensity lasers are able to accelerate protons and heavier ions to multi-MeV energies during their interaction with solid targets, gas jets and clusters. When such a laser radiation is focused at the intensity above 10” Wcm'2, local electric field strength will be almost equivalent to that within an atom. Hence, new nonlinear optical phenomena will be expected in the field of light matter interaction. Most of the research in the material interaction using high power lasers, especially related to plasma interaction, has been directed to the short pulse x-ray generation- Nanosecond laser interactions with solid targets also generate plasmas which emit radiation mainly in the optical region, the understanding of which is far from satisfactory. This thesis deals with a detailed study of some of the dynamical processes in plasmas generated by nanosecond and femtosecond lasers

Plasma Assisted Deposition Technique for Synthesis of low Dielectric Constant Polyanisidine Thin Films

Plasma Science, 2002. ICOPS 2002. IEEE Conference Record-Abstracts. The 29th IEEE International Conference on

Lithography-free micro- and nanostructuring based on conventional plasma etching

In now-a-days semiconductor and MEMS technologies the photolithography is the working horse for fabrication of functional devices. The conventional way (so called Top-Down approach) of microstructuring starts with photolithography, followed by patterning the structures using etching, especially dry etching. The requirements for smaller and hence faster devices lead to decrease of the feature size to the range of several nanometers. However, the production of devices in this scale range needs photolithography equipment, which must overcome the diffraction limit. Therefore, new photolithography techniques have been recently developed, but they are rather expensive and restricted to plane surfaces. Recently a new route has been presented - so-called Bottom-Up approach - where from a single atom or a molecule it is possible to obtain functional devices. This creates new field - Nanotechnology - where one speaks about structures with dimensions 1 - 100 nm, and which has the possibility to replace the conventional photolithography concerning its integral part - the self-assembly. However, this technique requires additional and special equipment and therefore is not yet widely applicable. This work presents a general scheme for the fabrication of silicon and silicon dioxide structures with lateral dimensions of less than 100 nm that avoids high-resolution photolithography processes. For the self-aligned formation of extremely small openings in silicon dioxide layers at in depth sharpened surface structures, the angle dependent etching rate distribution of silicon dioxide against plasma etching with a fluorocarbon gas (CHF3) was exploited. Subsequent anisotropic plasma etching of the silicon substrate material through the perforated silicon dioxide masking layer results in high aspect ratio trenches of approximately the same lateral dimensions. The latter can be reduced and precisely adjusted between 0 and 200 nm by thermal oxidation of the silicon structures owing to the volume expansion of silicon during the oxidation. On the basis of this a technology for the fabrication of SNOM calibration standards is presented. Additionally so-formed trenches were used as a template for CVD deposition of diamond resulting in high aspect ratio diamond knife. A lithography-free method for production of periodic and nonperiodic surface structures using the angular dependence of the etching rate is also presented. It combines the self-assembly of masking particles with the conventional plasma etching techniques known from microelectromechanical system technology. The method is generally applicable to bulk as well as layered materials. In this work, layers of glass spheres of different diameters were assembled on the sample surface forming a mask against plasma etching. Silicon surface structures with periodicity of 500 nm and feature dimensions of 20 nm were produced in this way. Thermal oxidation of the so structured silicon substrate offers the capability to vary the fill factor of the periodic structure owing to the volume expansion during oxidation but also to define silicon dioxide surface structures by selective plasma etching. Similar structures can be simply obtained by structuring silicon dioxide layers on silicon. The method offers a simple route for bridging the Nano- and Microtechnology and moreover, an uncomplicated way for photonic crystal fabrication.

Profile simulations of gas chopping etching processes : model development and comparison with experiments

The progress in microsystem technology or nano technology places extended requirements to the fabrication processes. The trend is moving towards structuring within the nanometer scale on the one hand, and towards fabrication of structures with high aspect ratio (ratio of vertical vs. lateral dimensions) and large depths in the 100 µm scale on the other hand. Current procedures for the microstructuring of silicon are wet chemical etching and dry or plasma etching. A modern plasma etching technique for the structuring of silicon is the so-called "gas chopping" etching technique (also called "time-multiplexed etching"). In this etching technique, passivation cycles, which prevent lateral underetching of sidewalls, and etching cycles, which etch preferably in the vertical direction because of the sidewall passivation, are constantly alternated during the complete etching process. To do this, a CHF3/CH4 plasma, which generates CF monomeres is employed during the passivation cycle, and a SF6/Ar, which generates fluorine radicals and ions plasma is employed during the etching cycle. Depending on the requirements on the etched profile, the durations of the individual passivation and etching cycles are in the range of a few seconds up to several minutes. The profiles achieved with this etching process crucially depend on the flow of reactants, i.e. CF monomeres during the passivation cycle, and ions and fluorine radicals during the etching cycle, to the bottom of the profile, especially for profiles with high aspect ratio. With regard to the predictability of the etching processes, knowledge of the fundamental effects taking place during a gas chopping etching process, and their impact onto the resulting profile is required. For this purpose in the context of this work, a model for the description of the profile evolution of such etching processes is proposed, which considers the reactions (etching or deposition) at the sample surface on a phenomenological basis. Furthermore, the reactant transport inside the etching trench is modelled, based on angular distribution functions and on absorption probabilities at the sidewalls and bottom of the trench. A comparison of the simulated profiles with corresponding experimental profiles reveals that the proposed model reproduces the experimental profiles, if the angular distribution functions and absorption probabilities employed in the model is in agreement with data found in the literature. Therefor the model developed in the context of this work is an adequate description of the effects taking place during a gas chopping plasma etching process.

THz Plasma Waves in Field-Effect-Transistors: A Monte Carlo Study

Sensing with electromagnetic waves having frequencies in the Terahertz-range is a very attractive investigative method with applications in fundamental research and industrial settings. Up to now, a lot of sources and detectors are available. However, most of these systems are bulky and have to be used in controllable environments such as laboratories. In 1993 Dyakonov and Shur suggested that plasma waves developing in field-effect-transistors can be used to emit and detect THz-radiation. Later on, it was shown that these plasma waves lead to rectification and allows for building efficient detectors. In contrast to the prediction that these plasma waves lead to new promising solid-state sources, only a few weak sources are known up to now. This work studies THz plasma waves in semiconductor devices using the Monte Carlo method in order to resolve this issue. A fast Monte Carlo solver was developed implementing a nonparabolic bandstructure representation of the used semiconductors. By investigating simplified field-effect-transistors it was found that the plasma frequency follows under equilibrium conditions the analytical predictions. However, no current oscillations were found at room temperature or with a current flowing in the channel. For more complex structures, consisting of ungated and gated regions, it was found that the plasma frequency does not follow the value predicted by the dispersion relation of the gated nor the ungated device.

Factores asociados al desarrollo de eventos adversos con transfusión de plasma fresco congelado en la Fundación Cardioinfantil-Instituto de Cardiología

Objetivo: Determinar los factores asociados con reacciones adversas transfusionales al Plasma Fresco Congelado en la FCI-IC durante los años 2008-2010. Metodología: Estudio de Casos y Controles, en relación 1:3. Pacientes mayores de 18 años transfundidos con plasma fresco congelado en la FCI-IC durante los años 2008-2010. Se definieron como casos pacientes identificados a partir del registro de eventos adversos transfusionales de la FCI que presentaron una reacción adversa transfusional a Plasma Fresco Congelado de los siguientes tipos: alérgica, febril, edema pulmonar no cardiogénico, sobrecarga volumen, CID o PTT. Los controles se definieron como personas que recibieron transfusión de plasma fresco congelado y cumpliendo los criterios de selección, no presentaron reacción adversa transfusional. Resultados: La edad de los casos fue significativamente menor (52,4 vs. 60,5 p=0,001). Para las reacciones alérgicas, el número de unidades de plasma provenientes de una unidad externa (0,7 vs. 0,0 p=0,003), de una donante de sexo femenino (2,5 vs. 1,4 p=0,11) y la paridad de dichas donantes (4,0 vs. 2,6 p=0,04), fueron en promedio mayor que para los controles. La presencia de sépsis (OR:0.01, IC95%:0,01-0,87, p=0,015) y de diabetes (OR:0.9, IC95%:0,01-0,54, p=0,003) se comportaron como factores protectores para el desarrollo de una reacción alérgica. Discusión y Conclusiones: Los resultados de este trabajo son compatibles con el hecho de que las reacciones adversas transfusionales están relacionadas con plasma provenientes de un banco de sangre externo, de donantes mujeres y de mujeres con un mayor número de gestaciones.

Eficacia del plasma rico en plaquetas en procedimientos médicos estéticos faciales . Evaluación en contorno de ojos.

Introducción: En la actualidad se están implementando nuevas técnicas, para el tratamiento de líneas de expresión facial. El Plasma Rico en Plaquetas (PRP) utiliza factores de crecimiento humano autólogos con fines médicos estéticos. El objetivo de este trabajo fue evaluar el tratamiento con plasma rico en plaquetas en el manejo del rejuvenecimiento periocular. Materiales y métodos: Estudio descriptivo retrospectivo en una cohorte de 27 pacientes entre 30 a 70 años de ambos sexos,tratados con PRP sin tratamientos médicos estéticos previos . Se compararon fotografías del sistema VISIA®, previo y posterior el PRP, para determinar los cambios del área periocular. Con análisis comparativo de medias utilizando pruebas t de student. Resultados: De 27 historias clínicas revisadas 96,3% eran mujeres, la edad promedio fue de 52.67 años. Se observaron cambios clínicos satisfactorios en el manejo del foto envejecimiento periocular con mejoría estadísticamente significativa entre el promedio inicial y el post tratamiento en arrugas, textura y porfirinas (p: 0.000). No se observaron diferencias estadísticamente significativas entre los grupos de edad (p = 0,62). Los pacientes analizados posterior al tratamiento se encuentran en mejor estado que el 63,78% de la población de su mismo sexo, edad y fototipo de piel. Los eventos adversos fueron disminuyendo en su frecuencia en cada una de las sesiones siguientes. Discusión: El PRP proporciona una mejoría global en los parámetros de envejecimiento periocular lo cual se correlaciono con los estudios previos in vitro. Conclusiones: El PRP es seguro y eficaz en contorno de ojos.

Corticosterone plasma concentrations in Carioca High- and Low-Conditioned freezing rats after a fear conditioned task

Our group in the Psychology Department at Pontifícia Universidade Católica do Rio de Janeiro (PUC-Rio) developed a rat genetic model of extreme freezing in response to contextual cues in an experimental chamber previously associated with footshock. One of the lines, Carioca High Freezing (CHF), exhibits an enhanced conditioned freezing response, whereas the other line, Carioca Low Freezing (CLF), shows the opposite response. The present study investigated corticosterone concentration between these two lines of animals and a random (RND) line of rats both under basal conditions and test condition after an emotional challenge using a contextual fear conditioning protocol. Comparisons between basal and test plasma corticosterone concentrations suggested differential basal and fear-induced differences between the two lines. The differences between basal conditions is an important and relevant aspect to be considered in behavioral experiments using or assessing stress and could help to understand variability in naïve populations.

Proyecto Plasma "Metodología de análisis entre Monopolio y Monopsonio"

muestra las opciones de negociación que tienen un Monopolio y un Monopsonio, donde los agentes se encuentran obligados a variar completamente el curso de sus estrategias.

Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition

Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases. The analysis allows us to determine the sample temperature. The local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggested that the photoluminescence observed in porous silicon and similar materials could, in some cases, be blackbody radiation

Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature