Man-made desert algal crusts as affected by environmental factors in Inner Mongolia, China

Man-made desert algal crusts were constructed on a large scale (3000m(2)) in Inner Mongolia, China. Microcoleus vaginatus was mass cultivated and inoculated directly onto unconsolidated sand dune and irrigated by automatic sprinkling micro-irrigation facilities. The crusts were formed in a short time and could resist the erosion of winds and rainfalls 22 days after inoculation. The maximum biomass in the man-made algal crusts could also reach 35 mu g Chl a/cm(2) of soil. Effects of environmental factors such as temperature, irrigation, rainfall and soil nutrients on algal biomass of man-made algal crusts were also studied. It was found that rainfalls and lower light intensity had significantly positive effects on the biomass of man-made algal crusts. The preliminary results suggested that man-made algal crusts could be formed rapidly, and thus it might be a new feasible alternative method for fixing unconsolidated sand. (c) 2006 Elsevier Ltd. All rights reserved.

Development of low-pH cements for immobilisation of intermediate level radioactive waste: Achievements and challenges

Although cementation is a widely recognized solidification/ stabilization process for immobilisation of Intermediate Level Radioactive Waste (ILRW), the low resistance to hyperalkaline pore waters compromises the effectiveness of the process when Portland Cement (PC) is employed. Moreover the manufacture of PC is responsible for significant CO2 emissions. In this context, low pH cements are environmentally more suitable and have emerged as a potential alternative for obtaining secure waste forms. This paper summarises the achievements on development of low-pH cements and the challenges of using these new materials for the ILRW immobilisation. The performance of waste forms is also discussed in terms of radionuclides release. Reactive magnesium oxide and magnesium phosphate cements are emphasised as they feature important advantages such as consumption of available constituents for controlling acid-base reactions, reduced permeability and higher density. Additionally, in order to identify new opportunities for study, the long-term modelling approach is also briefly discussed. Copyright © 2013 by ASME.

Environmental threats to children's health in Southeast Asia and the Western Pacific

The Southeast Asia and Western Pacific regions contain half of the world's children and are among the most rapidly industrializing regions of the globe. Environmental threats to children's health are widespread and are multiplying as nations in the area undergo industrial development and pass through the epidemiologic transition. These environmental hazards range from traditional threats such as bacterial contamination of drinking water and wood smoke in poorly ventilated dwellings to more recently introduced chemical threats such as asbestos construction materials; arsenic in groundwater; methyl isocyanate in Bhopal, India; untreated manufacturing wastes released to landfills; chlorinated hydrocarbon and organophosphorous pesticides; and atmospheric lead emissions from the combustion of leaded gasoline. To address these problems, pediatricians, environmental health scientists, and public health workers throughout Southeast Asia and the Western Pacific have begun to build local and national research and prevention programs in children's environmental health. Successes have been achieved as a result of these efforts: A cost-effective system for producing safe drinking water at the village level has been devised in India; many nations have launched aggressive antismoking campaigns; and Thailand, the Philippines, India, and Pakistan have all begun to reduce their use of lead in gasoline, with resultant declines in children's blood lead levels. The International Conference on Environmental Threats to the Health of Children, held in Bangkok, Thailand, in March 2002, brought together more than 300 representatives from 35 countries and organizations to increase awareness on environmental health hazards affecting children in these regions and throughout the world. The conference, a direct result of the Environmental Threats to the Health of Children meeting held in Manila in April 2000, provided participants with the latest scientific data on children's vulnerability to environmental hazards and models for future policy and public health discussions on ways to improve children's health. The Bangkok Statement, a pledge resulting from the conference proceedings, is an important first step in creating a global alliance committed to developing active and innovative national and international networks to promote and protect children's environmental health.

Effects of heavy metals on plants and resistance mechanisms

Goal, Scope and Background. As one of the consequences of heavy metal pollution in soil, water and air, plants are contaminated by heavy metals in some parts of China. To understand the effects of heavy metals upon plants and the resistance mechanisms, would make it possible to use plants for cleaning and remediating heavy metal-polluted sites. Methods. The research results on the effects of heavy metals on plants and resistant mechanisms are compiled from Chinese publications from scientific journals and university journals, mostly published during the last decade. Results and Discussion. Effects of heavy metals on plants result in growth inhibition, structure damage, a decline of physiological and biochemical activities as well as of the function of plants. The effects and bioavailability of heavy metals depend on many factors, such as environmental conditions, pH, species of element, organic substances of the media and fertilization, plant species. But, there are also studies on plant resistance mechanisms to protect plants against the toxic effects of heavy metals such as combining heavy metals by proteins and expressing of detoxifying enzyme and nucleic acid, these mechanisms are integrated to protect the plants against injury by heavy metals. Conclusions. There are two aspects on the interaction of plants and heavy metals. On one hand, heavy metals show negative effects on plants. On the other hand, plants have their own resistance mechanisms against toxic effects and for detoxifying heavy metal pollution. Recommendations and Outlook. To study the effects of heavy metals on plants and mechanisms of resistance, one must select crop cultivars and/or plants for removing heavy metals from soil and water. More highly resistant plants can be selected especially for a remediation of the pollution site. The molecular mechanisms of resistance of plants to heavy metals should be studied further to develop the actual resistance of these plants to heavy metals. Understanding the bioavailability of heavy metals is advantageous for plant cultivation and phytoremediation. Decrease in the bioavailability to farmlands would reduce the accumulation of heavy metals in food. Alternatively, one could increase the bioavailability of plants to extract more heavy metals.

Extremely low density InAs quantum dots with no wetting layer

Extremely low density InAs quantum dots (QDs) are grown by molecular beam droplet epitaxy, The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs (4x10(6) cm(-2)) are formed by depositing 0.65 monolayers (ML) of indium. This is much less than the critical deposition thickness (1.7 ML), which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence line-width of about 24 meV is insensitive to cryostat temperatures from 10 K to 250 K. All measurements indicate that there is no wetting layer connecting the QDs.

Abatement of waste gases and water during the processes of semiconductor fabrication

The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

Infrared absorption spectroscopy, optical transient current spectroscopy (OTCS), and photoluminescence (PL) spectroscopy are used to investigate the annealing induced evolution of defects in low-temperature (LT)-grown GaAs-related materials. Two LT samples of bulk GaAs (sample A) and GaAs/AlxGa1-xAs multiple-quantum-well. (MQW) structure (sample B) were grown at 220 and 320 degreesC on (001) GaAs substrates, respectively. A strong defect-related absorption band has been observed in both as-grown samples A and B. It becomes weaker in samples annealed at temperatures above 600 degreesC. In sample A, annealed in the range of 600-800 degreesC, a large negative decay signal of the optical transient current (OTC) is observed in a certain range of temperature, which distorts deep-level spectra measured by OTCS, making it difficult to identify any deep levels. At annealing temperatures of 600 and 700 degreesC, both As-Ga antisite and small As cluster-related deep levels are identified in sample B. It is found that compared to the As cluster, the As-Ga antisite has a larger activation energy and carrier capture rate. At an annealing temperature of 800 degreesC, the large negative decay signal of the OTC is also observed in sample B. It is argued that this negative decay signal of the OTC is related to large arsenic clusters. For sample B, transient PL spectra have also been measured to study the influence of the, defect evolution on optical properties of LT GaAs/AlxGa1-xAs MQW structures. Our results clearly identify a defect evolution from AS(Ga) antisites to arsenic clusters after annealing.

Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy

Optical transient current spectroscopy (OTCS) has been used to investigate defects in the low-temperature-grown GaAs after postgrowth rapid thermal annealing (RTA). Two samples A and B were grown at 220 degreesC and 360 degreesC on (001) GaAs substrates, respectively. After growth, samples were subjected to 30s RTA in the range of 500-800 degreesC. Before annealing, X-ray diffraction measurements show that the concentrations of the excess arsenic for samples A and B are 2.5 x 10(19) and 1 x 10(19) cm(-3), respectively. It is found that there are strong negative decay signals in the optical transient current (OTC) for the annealed sample A. Due to the influence of OTC strong negative decay signals, it is impossible to identify deep levels clearly from OTCS. For a comparison, three deep levels can be identified for sample B before annealing. They are two shallower deep levels and the so-called As-Ga antisite defect. At the annealing temperature of 600 degreesC, there are still three deep levels. However, their structures are different from those in the as-grown sample. OTC strong negative decay signals are also observed for the annealed sample B. It is argued that OTC negative decay signals are related to arsenic clusters. (C) 2000 Elsevier Science B.V. All rights reserved.

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].

A Raman scattering study of GaAs: As films lifted off GaAs substrate

We performed Raman scattering investigations on low-temperature-grown (LTG) films of GaAs that had been lifted off the GaAs substrate. The Raman measurements unambiguously show the effects of excess arsenic on phonon scattering from LTG films of GaAs. The larger downwards shift of the LO phonon frequency for unannealed free-standing films is explained by invoking the elimination of mismatch strain. The Raman signal due to precipitates of elemental arsenic in the annealed GaAs : As films is determined. It is confirmed that the arsenic clusters formed by rapid thermal annealing are mainly amorphous, giving rise a broad Raman peak in the range 180-260 cm(-1).

Self-assembled GaAs quantum rings by MBE droplet epitaxy

Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for realization of solid state quantum information devices, including QDs single photon emission source, QRs single electron memory unit, etc. To fabricate GaAs quantum rings, we use Molecular Beam Epitaxy (MBE) droplet technique in this report. In this droplet technique, Gallium (Ga) molecular beams are supplied initially without Arsenic (As) ambience, forming droplet-like nano-clusters of Ga atoms on the substrate, then the Arsenic beams are supplied to crystallize the Ga droplets into GaAs crystals. Because the morphologies and dimensions of the GaAs crystal are governed by the interplay between the surface migration of Ga and As adatoms and their crystallization, the shape of the GaAs crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and As/Ga flux beam equivalent pressures(BEPs). It has been shown by Atomic force microscope (AFM) measurements that GaAs single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200 C to 300 C under As flux (BEP) of about 1.0 x 10(-6) Torr. The diameter of GaAs rings is about 30-50 nm and thickness several nm.

铬污染土壤修复过程中土壤细菌群落多样性的RFLP分析

对污染土壤修复过程中土壤细菌群落多样性的变化进行研究。【方法】以淹水培养后的模拟铬污染土壤为供试材料,通过直接提取土壤中总细菌DNA,利用细菌专一引物克隆细菌16S rDNA片段,分别建立克隆文库。利用PCR-RFLP技术,分析比较了土壤淹水10 d(对照,S1)、添加Cr(Ⅵ)淹水10 d(S2)、添加Cr(Ⅵ)和Fe(OH)3淹水10 d(S3)及20 d(S4)4个处理中土壤细菌群落的变化。【结果】用专一引物克隆细菌16S rDNA片段,分别建立了克隆文库;用限制性内切酶RsaⅠ进行细菌16S rDNA PCR-RFLP分析,分别得到123,120,97和69个酶切类型,库容值分别为54.92%,55.43%,65.33%和76.60%;Shannon-Wiener指数、Gini指数、物种丰富度指数(dMa)和物种均匀度指数(Jgi)均表现为S1>S2>S3>S4,以上4个指数的变异系数分别为11.51%,1.84%,23.64%和1.55%;基于细菌多样性参数的聚类分析结果,将对照S1和添加Cr(Ⅵ)处理的S2归于一类,而2个添加Fe处理的土壤S3和S4聚为一类。【结论】经过10 d淹水处理,...

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

Stoichiometric defects in semi-insulating GaAs

The influences of arsenic interstitials and dislocations on the lattice parameters of undoped semi-insulating (SI) GaAs single crystals were analyzed. It was shown that the dislocations in such crystals serve as effective gettering sites for arsenic interstitials due to the deformation energy of dislocations. The average excess arsenic in GaAs epilayers grown by molecular-beam epitaxy (MBE) at low temperatures (LT) is about 1%, and the lattice parameters of these epilayers are larger than those of liquid-encapsulated Czochralski-grown (LEG) SI-GaAs by about 0.1%. The atomic ratio, [As]/([Ga] + [As]), in SI-GaAs grown by low-pressure (LP) LEC is the nearest to the strict stoichiometry compared with those grown by high-pressure (HP) LEC and vertical gradient freeze (VGF). After multiple wafer annealing (MWA), the crystals grown by HPLEC become closer to be strictly stoichiometric.

Liquid encapsulated-melt zone processing of GaAs

A liquid encapsulated melt Bone process has been developed for single crystal growth of GaAs. Single crystals of 40 mm long have been grown with this technique. To avoid unwanted nucleation events and maintain a constant crystal diameter, from top to bottom growth using a short zone with a convex zone surface was found to give the best results. An arsenic overpressure was used to in conjunction with a B2O3 encapsulant in order to suppress arsenic dissociation from the melt and maintain the stoichiometry of the crystal.