Nonlinear Optical Properties of AI-Doped nc-Si-SiO_2 Composite Films

The nonlinear optical properties of Al-doped nc-Si-SiO_2 composite films have been investigated using the time-resolved four-wave mixing technique with a femtosecond laser. The off-resonant third-order nonlinear susceptibility is observed to be 1.0 × 10~(-10) esu at 800nm. The relaxation time of the optical nonlinearity in the films is as short as 60fs. The optical nonlinearity is enhanced due to the quantum confinement of electrons in Si nanocrystals embedded in the SiO_2 films. The enhanced optical nonlinearity does not originate from Al dopant because there are no Al clusters in the films.

Study of intensity-dependent nonlinear optical coefficients of GaP optical crystal at 800 nm by femtosecond pump-probe experiment

The intensity-dependent two-photon absorption and nonlinear refraction coefficients of GaP optical crystal at 800 nm were measured with time-resolved femtosecond pump-probe technique. A nonlinear refraction coefficient of 1.7*10^(-17) m2/W and a two-photon absorption coefficient of 1.5*10^(-12) m/W of GaP crystal were obtained at a pump intensity of 3.5*10^(12) W/m2. The nonlinear refraction coefficient saturates at 3.5*10^(12) W/m2, while the two-photon absorption coefficient keeps linear increase at 6*10^(12) W/m2. Furthermore, fifth-order nonlinear refraction of the GaP optical crystal was revealed to occur above pump intensity of 3.5*10^(12) W/m2.

Temperature Distribution in Ridge Structure InGaN Laser Diodes and Its Influence on Device Characteristics

Time-dependent thermal simulation of ridge-geometry InGaN laser diodes is carried out with a two-dimensional model. A high temperature in the waveguide layer and a large temperature step between the regions under and outside the ridge are generated due to the poor thermal conductivity of the sapphire substrate and the large threshold current and voltage. The temperature step is thought to have a strong influence on the characteristics of the laser diodes. Time-resolved measurements of light-current curves,spectra, and the far-field pattern of the InGaN laser diodes under pulsed operation are performed. The results show that the thermal lensing effect improves the confinement of the higher order modes and leads to a lower threshold current and a higher slope efficiency of the device while the high temperature in the active layer results in a drastic decrease in the slope efficiency.

Optical Pr operties of GaNAs and GaAsSb Semiconductors

Under short pulse laser excitation, it has been observed, for the first time, a new high-energy photoluminescence emission from GaNx As1- x/GaAs SQWs. This new emission has totally different optical properties compared with the localized exciton transition in GaNx As1-x, and is attributed to the recombination of delocalized excitons in QWs. At the same time, a competition process between localized and delocalized exciton emissions in GaNx As1-x/GaAs quantum wells is observed in the temperaturedependent PL spectra under the short pulse excitation. This competition process for the first time, reveals the physical origin of the temperature-induced S-shaped PL peak shift, which was often reported in the disordered alloy semiconductor system under continuous-wave excitation and puzzled people for a long time. We have also investigated a set of GaNx As1- x samples with small nitrogen composition( x ＜ 1% )by PL, and time-resolved PL. After the PL dependence on temperature and excitation power and PL dynamics were measured, the new PL peak was identified as an intrinsic transition of alloy, rather than N-related bound states. This is the first observation in PL, showing that alloy state exists in GaNx As1- x materials even when N composition is smaller than 0.1%. Finally by selective excitation,both type-Ⅰ and type-Ⅱ transitions were observed simultaneously in GaAs1-xSbx/GaAs SQWs for the first time.

Stable Temperature Characteristics of InAs/GaAs Quantum Dots at Long Wavelength Emission

The time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1. 48 μtm emission is obtained at room temperature. Temperature dependent PL measurements show that the PL intensity of the emission is very steady. It decays only to half as the temperature increases from 15 K to room temperature, while at the same time, the intensity of the other emission decreases by a factor of 5 orders of magnitude. These two emissions are attributed to large-size QDs and short period superlattices (SLs), respectively. Large-size QDs are easier to capture and confine carriers,which benefits the lifetime of PL, and therefore makes the emission intensity insensitive to the temperature.

Optical study of localized and delocalized states in GaAsN/GaAs

Taking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Optical study of electronic states in GaAsN

GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

Optical transitions in GaNAs/GaAs single quantum well

We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].

Electron spin dynamics in heavily Mn-doped (Ga,Mn)As

Electron spin relaxation and related mechanisms in heavily Mn-doped (Ga,Mn) As are studied by performing time-resolved magneto-optical Kerr effect measurements. At low temperature, s-d exchange scattering dominates electron spin relaxation, whereas the Bir-Aronov-Pikus mechanism and Mn impurity scattering play important roles at high temperature. The temperature-dependent spin relaxation time exhibits an anomaly around the Curie temperature (T(c)) that implies that thermal fluctuation is suppressed by short-range correlated spin fluctuation above T(c). (C) 2010 American Institute of Physics. [doi:10.1063/1.3531754]

DFT/TDDFT Studies on the Electronic Structures and Spectral Properties of Rhenium(I) Pyridinybenzoimidazole Complexes

The electronic structures and spectral properties of three Re(I) complexes [Re(CO)(3)XL] (X = Br, Cl; L = 1-(4-5 '-phenyl-1.3,4-oxadiazolylbenzyl)-2-pyridinylbenzoimidazole (1), 1-(4-carbazolylbutyl)-2-pyridinylbenzoimidazole (2), and 2-(1-ethyl benzimidazol-2-yl)pyridi ne (3)) were investigated theoretically. The ground and the lowest lying triplet excited states were full optimized at the B3LYP/LANL2DZ and CIS/LANL2DZ levels, respectively. TDDFT/PCM calculations have been employed to predict the absorption and emission spectra starting from the ground and excited state geometries, respectively.

One-dimensional CaWO4 and CaWO4:Tb3+ nanowires and nanotubes: electrospinning preparation and luminescent properties

One-dimensional CaWO4 and CaWO4:Tb3+ nanowires and nanotubes have been prepared by a combination method of sol-gel process and electrospinning. X-Ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL), low voltage cathodoluminescence (CL) and time-resolved emission spectra, as well as kinetic decays were used to characterize the resulting samples. The results of XRD, FT-IR, TG-DTA indicate that the CaWO4 and CaWO4: Tb3+ samples begin to crystallize at 500 degrees C with the scheelite structure. Under ultraviolet excitation and low-voltage electron beams excitation, the CaWO4 samples exhibit a blue emission band with a maximum at 416 nm originating from the WO42- groups, while the CaWO4:Tb3+ samples show the characteristic emission of Tb3+ corresponding to (D4-F6,5,4,3)-D-5-F-7 transitions due to an efficient energy transfer from WO42- to Tb3+.

Preparation and luminescence properties of Ce3+ and/or Tb3+ doped LaPO4 nanofibers and microbelts by electrospinning

Ce3+ and/or Tb3+ doped LaPO4 nanofibers and microbelts have been prepared by a combination method of sol-gel process and electrospinning. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL), low voltage cathodoluminescence (CL) and time-resolved emission spectra as well as kinetic decays were used to characterize the resulting samples. SEM and TEM results indicate the as-formed precursor fibers and belts are smooth. and the as-prepared nanofibers and microbelts consist of nanoparticles. The doped rare-earth ions show their characteristic emission under ultraviolet excitation, i.e. Ce3+ 5d-4f and Tb3+ D-5(4)-F-7(j) (J = 6-3) transitions, respectively. The energy transfer process from Ce3+ to Tb3+ in LaPO4:Ce3+, Tb3+ nanofibers was further studied by the time-resolved emission spectra.

Sol-gel synthesis and characterization of SiO2@NaGd(WO4)(2): Eu3+ core-shell-structured spherical phosphor particles

Monodisperse, core-shell-structured SiO2@NaGd(WO4)(2):Eu3+ particles were prepared by the sol-gel method. The samples were characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, photoluminescence (PL), and low-voltage cathodoluminescence (CL) as well as time-resolved PL spectra and lifetimes. PL and CL study revealed that the core-shell-structured SiO2@NaGd (WO4)(2):Eu3+ particles show strong red emission dominated by the D-5(0) - F-7(2) transition of Eu3+ at 614 nm with a lifetime of 0.74 ms. The PL and CL emission intensity can be tuned by the coating number of NaGd(WO4)(2):Eu3+ phosphor layers on SiO2 and by accelerating voltage and the filament current, respectively.

Silica supported submicron SiO2@Y2SiO5 : Eu3+ and SiO2@Y2SiO5 : Ce3+/Tb3+ spherical particles with a core-shell structure: Sol-gel synthesis and characterization

X-1-y(2)SiO(5):Eu3+ and X-1-Y2SiO5:Ce3+ and/or Tb3+ phosphor layers have been coated on nonaggregated, monodisperse, submicron spherical SiO2 particles by a sol-gel process, followed by surface reaction at high temperature (1000 degrees C), to give core/shell structured SiO2@Y2SiO5:Eu3+ and SiO2@Y2SiO5:Ce3+/Tb3+ particles. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), TEM, photoluminescence (PL), low voltage cathodoluminescence (CL), and time-resolved PL spectra and lifetimes are used to characterize these materials. The XRD results indicate that X-1-Y2SiO5 layers have been successfully coated on the sur- face Of SiO2 particles, as further verified by the FESEM and TEM images. The PL and CL studies suggest that SiO2@Y2SiO5:Eu3+, SiO2@Y2SiO5:Tb3+ (or Ce3+/Tb3+), and SiO2@Y2SiO5:Ce3+ core/shell particles exhibit red (Eu3+, 613 rim: D-5(0)-F-7(2)), green (Tb3+, 542nm: D-5(4)-F-7(5)), or blue (Ce3+, 450nm: 5d-4f) luminescence, respectively. Pl, excitation, emission, and time-resolved spectra demonstrate that there is an energy transfer from Ce3+ to Tb3+ in the SiO2@Y2SiO5:Ce3+,Tb3+ core/shell particles.

Polydispersity of ethylene sequence length in metallocene ethylene/alpha-olefin copolymers. II. Influence on crystallization and melting behavior

In this work, crystallization and melting behavior of metallocene ethylene/alpha-olefin copolymers were investigated by differential scanning calorimetry (DSC) and atomic force microscopy (AFM). The results indicated that the crystallization and melting temperatures for all the samples were directly related to the long ethylene sequences instead of the average sequence length (ASL), whereas the crystallization enthalpy and crystallinity were directly related to ASL, that is, both parameters decreased with a decreasing ASL. Multiple melting peaks were analyzed by thermal analysis. Three phenomena contributed to the multiple melting behaviors after isothermal crystallization, that is, the melting of crystals formed during quenching, the melting-recrystallization process, and the coexistence of different crystal morphologies. Two types of crystal morphologies could coexist in samples having a high comonomer content after isothermal crystallization. They were the chain-folded lamellae formed by long ethylene sequences and the bundlelike crystals formed by short ethylene sequences. The coexistence phenomenon was further proved by the AFM morphological observation.