Estimativas a priori para problemas não lineares de condução de calor, com o uso da transformada de Kirchhoff.

Este trabalho apresenta uma estimativa a priori para o limite superior da distribuição de temperatura considerando um problema em regime permanente em um corpo com uma condutividade térmica dependente da temperatura. A discussão é realizada supondo que as condições de contorno são lineares (lei de Newton do resfriamento) e que a condutividade térmica é constante por partes (quando considerada como uma função da temperatura). Estas estimativas consistem em uma ferramenta poderosa que pode prescindir da necessidade de uma simulação numérica cara de um problema de transferência de calor não linear, sempre que for suficiente conhecer o valor mais alto de temperatura. Nestes casos, a metodologia proposta neste trabalho é mais eficaz do que as aproximações usuais que assumem tanto a condutividade térmica quanto as fontes de calor como constantes.

Mudanças de Estado e Multiplicadores Fiscais no Brasil entre 1999-2012

Este trabalho avalia o comportamento dos multiplicadores fiscais no Brasil entre 1999-2012. Para tanto, utiliza a metodologia desenvolvida por Sims, Waggoner e Zha (2008), que é um procedimento Bayesiano de estimação no qual os parâmetros do modelo mudam com alterações no estado da economia e os estados (regimes) seguem um processo de mudança de regime markoviano. Ou seja, foi estimado um modelo VAR Estrutural Bayesiano com mudança de regimes Markoviana (Markov Switching Structural Bayesian Vector Autoregression - MS-SBVAR). A base de dados é composta pelo consumo da administração pública, pela formação bruta de capital fixo da administração pública, pela carga tributária líquida e pelo Produto Interno Bruto (PIB), das três esferas do governo (federal, estadual, incluindo o Distrito Federal, e municipal). O software MATLAB/Dynare foi utilizado na estimação dos modelos e os resultados sugerem a ocorrência de 2 ou 3 regimes nos dois modelos que melhor se ajustaram aos dados. Os multiplicadores estimados apresentaram os sinais esperados e os diferentes tipos de multiplicadores fiscais calculados apresentaram valores maiores para a resposta do PIB a choques na formação bruta de capital fixo da administração pública que são eficazes, uma vez que possuem valores maiores do que um e impacto de longo prazo no PIB - quando comparado aos choques no consumo da administração pública, que possuem pouca persistência e são ineficazes (menores do que um), além de uma resposta negativa e persistente do PIB a choques na carga tributária líquida. Os resultados obtidos não indicam, ainda, multiplicadores fiscais maiores em regimes com maior variância nos resíduos do modelo.

Controle a estrutura variável para atenuar modos ressonantes em servomecanismos.

Nesta dissertação é mostrada experimentalmente a existência de modos ressonantes em servomotores de corrente contínua sem núcleo de ferro. Até onde se sabe, não já publicações ou documentos técnicos de fabricantes que relatam esse efeito neste tipo de motor. Foi observado também que a frequência da ressonância é variável e que possivelmente depende da temperatura interna do motor. Conforme e mostrado em simulações técnicas tradicionais para o controle de motores podem não ser eficazes para lidar com esses modos ressonantes. Com o objetivo de amortecer a ressonância e obter o controle de velocidade e posição desses motores, são desenvolvidos controladores por modo deslizante baseados em funções de chaveamento obtidas por observadores de alto ganho. Esse controle e robusto a incertezas paramétricas e perturbações. Com o auxílio de simulações são mostrados os pontos fortes e limitações de cada um dos controladores.

MOS and bipolar gated thyristor: A thyristor with IGBT switching characteristics

The IGBT has become the device of choice in many high-voltage-power electronic applications, by virtue of combining the ease of MOS gate control with an acceptable forward voltage drop. However, designers have retained an interest in MOS gated thyristor structures which have a turn-off capability. These offer low on-state losses as a result of their latching behaviour. Recently, there have been various proposals for dual-gate devices that have a thyristor on-state with IGBT-like switching. Many of these dual gated structures rely on advanced MOS technology, with inherent manufacturing difficulties. The MOS and bipolar gated thyristor offers all the advantages of dual gated performance, while employing standard IGBT processing techniques. The paper describes the MBGT in detail, and presents experimental and simulation results for devices based on realistic commercial processes. It is shown that the MBGT represents a viable power semiconductor device technology, suitable for a diverse range of applications. © IEE, 1998.

Switching aspects of hybrid semiconductor power devices

A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.

Switching aspects of hybrid semiconductor power devices

A hybrid semiconductor power device has been designed which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between an IGBT and a thyristor mode of operation. This paper discusses aspects of the switching behaviour of this and of similar devices. Simulation results of an example structure are presented and conceivable developments in the switching characteristics of hybrid devices are discussed.

Ultrafast switching liquid crystals for electro-optic transmissive and reflective displays and microscopic lasers

We have used novel liquid crystals with extremely large flexoelectric coefficients in a range of ultra-fast photonic/display modes, namely 1) the uniform lying helix, that leads to in-plain switching, birefringence based displays with 100 μs switching times at low fields, i.e.2-5 V/μm, wide viewing angle and analogue or grey scale capability, 2) the uniform standing helix, using planar surface alignment and in-plane fields, with sub ms response times and optical contrasts in excess of 5000:1 with a perfect black "off state", 3) the wide temperature range blue phase that leads to field controlled reflective color and 4) high slope efficiency, wide wavelength range tunable narrow linewidth microscopic liquid crystal lasers.

Effective handling of dialogue state in the hidden information state POMDP-based dialogue manager

Effective dialogue management is critically dependent on the information that is encoded in the dialogue state. In order to deploy reinforcement learning for policy optimization, dialogue must be modeled as a Markov Decision Process. This requires that the dialogue statemust encode all relevent information obtained during the dialogue prior to that state. This can be achieved by combining the user goal, the dialogue history, and the last user action to form the dialogue state. In addition, to gain robustness to input errors, dialogue must be modeled as a Partially Observable Markov Decision Process (POMDP) and hence, a distribution over all possible states must be maintained at every dialogue turn. This poses a potential computational limitation since there can be a very large number of dialogue states. The Hidden Information State model provides a principled way of ensuring tractability in a POMDP-based dialogue model. The key feature of this model is the grouping of user goals into partitions that are dynamically built during the dialogue. In this article, we extend this model further to incorporate the notion of complements. This allows for a more complex user goal to be represented, and it enables an effective pruning technique to be implemented that preserves the overall system performance within a limited computational resource more effectively than existing approaches. © 2011 ACM.

A single-rate context-dependent learning process underlies rapid adaptation to familiar object dynamics.

Motor learning has been extensively studied using dynamic (force-field) perturbations. These induce movement errors that result in adaptive changes to the motor commands. Several state-space models have been developed to explain how trial-by-trial errors drive the progressive adaptation observed in such studies. These models have been applied to adaptation involving novel dynamics, which typically occurs over tens to hundreds of trials, and which appears to be mediated by a dual-rate adaptation process. In contrast, when manipulating objects with familiar dynamics, subjects adapt rapidly within a few trials. Here, we apply state-space models to familiar dynamics, asking whether adaptation is mediated by a single-rate or dual-rate process. Previously, we reported a task in which subjects rotate an object with known dynamics. By presenting the object at different visual orientations, adaptation was shown to be context-specific, with limited generalization to novel orientations. Here we show that a multiple-context state-space model, with a generalization function tuned to visual object orientation, can reproduce the time-course of adaptation and de-adaptation as well as the observed context-dependent behavior. In contrast to the dual-rate process associated with novel dynamics, we show that a single-rate process mediates adaptation to familiar object dynamics. The model predicts that during exposure to the object across multiple orientations, there will be a degree of independence for adaptation and de-adaptation within each context, and that the states associated with all contexts will slowly de-adapt during exposure in one particular context. We confirm these predictions in two new experiments. Results of the current study thus highlight similarities and differences in the processes engaged during exposure to novel versus familiar dynamics. In both cases, adaptation is mediated by multiple context-specific representations. In the case of familiar object dynamics, however, the representations can be engaged based on visual context, and are updated by a single-rate process.

Solid-state memories based on ferroelectric tunnel junctions.

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10(6) A cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism.

Switching characteristics of diamond-based m-i-p+ diodes in power electronic applications

Modeling and numerical analysis of diamond m-i-p+ diode have been performed for static and transient analysis using TCAD Sentaurus platform. The simulation results are compared with experimental measurements. Prediction of transient turn-off characteristics of diamond m-i-p+ diode at high temperature is performed for the first time. It was found that unlike conventional Si diode, peak reverse current in diamond m-i-p+ diode reduces with increasing temperature while on-state voltage drop increases. © 2011 IEEE.

Steady-state analytical model for the trench insulated gate bipolar transistor

A steady-state, physically-based analytical model for the Trench Insulated Gate Bipolar Transistor which accounts for a combined PIN diode - PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in Trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimized Trench IGBT with a large ratio between the accumulation layer and the cell size leads to substantially improved on-state characteristics, which makes the Trench IGBT potentially the most attractive device in the area of high voltage fast switching devices.

Solid-state memories based on ferroelectric tunnel junctions

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10 6 A cm -2). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10 4A cm -2 at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism. © 2012 Macmillan Publishers Limited. All rights reserved.

Ultrafast switching liquid crystals for electro-optic transmissive and reflective displays and microscopic lasers

We report on novel liquid crystals with extremely large flexoelectric coefficients in a range of ultra-fast photonic modes, namely 1) the uniform lying helix, that leads to in-plain switching, birefringence phase devices with 100 μs switching times at low fields, i.e.2-5 V/μm, and analogue or grey scale capability, 2) the uniform standing helix, using planar surface alignment and in-plane fields, with sub ms response times and optical contrasts in excess of 5000:1 with a perfect optically isotropic or black "off state", 3) the wide temperature range blue phase that leads to field controlled reflective color, 4) chiral nematic optical reflectors electric field tunable over a wide wavelength range and 5) high slope efficiency, wide wavelength range tunable narrow linewidth microscopic liquid crystal lasers. © 2011 Materials Research Society.