天然三倍体鲫鱼突变体萍乡肉红鲫线粒体细胞色素b基因序列分析

用细胞色素b(Cyt b)基因特异性引物,对萍乡肉红鲫(Carassius auratus var.pingxiangnensis)的线粒体Cytb基因进行PCR扩增和双向测序。在12个个体中均得到序列一致的Cytb基因全序列,长度为1 140 bp。其A、T、G、C含量分别为28.2%(321)、28.8%(328)、14.8%(170)和28.2%(321),A+T含量(57%)明显高于G+C含量(43%),与其他水生动物相同基因片段碱基含量相似。该基因中密码子第1位核苷酸中4种碱基组成较为均衡;第2

爪哇伪枝藻胞外多糖诱导皮肤癌细胞(A431)凋亡的研究

为探讨爪哇伪枝藻胞外多糖(Extracellular polymeric substances ofScytonema javanicum,EPS)诱导人表皮癌A431细胞凋亡及其对凋亡相关基因caspase-3、bcl-2和bax表达的影响,本实验利用MTT法检测细胞生长抑制情况;HE染色法及透射电镜进行形态学观察;单细胞凝胶电泳法(SCGE/彗星电泳)分析DNA受损情况;免疫组织化学法检测细胞内caspase-3、bcl-2和bax表达水平。结果显示EPS能显著抑制A431细胞增殖,并呈时间和剂量依赖

微囊藻毒素LR诱导L-02细胞发生凋亡

目的了解微囊藻毒素(MC)LR对L-02细胞的毒性机制。方法以L-02细胞为材料,用不同浓度的MCLR处理该细胞,观察了细胞增殖能力、细胞形态改变、乳酸脱氢酶(LDH)泄漏、细胞凋亡率及凋亡相关基因等一系列指标的变化。结果 MTT细胞增殖实验可知,MCLR在24 h内对L-02细胞有轻微的抑制作用,随后却促进细胞增殖。48 h处理对 LDH泄漏没有显著影响,延时处理导致LDH泄漏发生,且MCLR浓度越高,LDH泄漏越严重,此结果显示发生了细胞氧化损伤。光镜下50μg/ml的毒素浓度在60 h处理后可造成明

长江江豚基因组大小测定

本研究采用流式细胞术,以公鸡(Gallusdomesticus)红血细胞DNA含量为标准,测定了23头长江江豚(Neophocaenaphocaenoidesasiaeorientali)的基因组大小(或称C值)。实验过程中采用了保存在3中不同条件下的长江江豚的全血样品,用3种不同的方法提取白细胞。为了获得本实验所用的公鸡红血细胞DNA含量的准确值,首先以人(Homosapiens)的C值为标准,对其进行了校正。然后其C值(2C=2.35pg)用于长江江豚的基因组大小测定。结果发现:长江江豚的单倍体DNA

两种缘毛类纤毛虫胞质Hsp70基因序列的克隆及其系统发育分析

克隆得到 2种缘毛类纤毛虫———钟形钟虫 (Vorticellacampanula)和螅状独缩虫 (Carchesiumpolyp inum)的胞质Hsp70基因部分序列 ,长度均为 4 38bp ,编码 14 6个氨基酸。以细菌为外类群 ,利用最大似然法和邻接法构建包括其他 5种纤毛虫在内的共 2 6个物种的Hsp70基因氨基酸序列系统发育树 ,其拓扑结构显示 :V campanula和C polypinum聚在一起 ,并与另 2种寡膜纲的嗜热四膜虫 (Tetrahymenathermophila)及草

武汉东湖若干轮虫卵和胚后发育时间的观察

在不同的实验温度下测定了武汉东湖10种体外带卵轮虫和4种非带卵轮虫卵及其胚后发育时间。结果表明,在一定温度范围内卵的发育时间随温度升高而缩短,它们间的关系可用曲线回归方程1nD=a+blnT+c(1nT)~2描述。在相同的温度培养下,体外带卵轮虫卵的发育时间一般比非带卵轮虫的时间长。初步观察结果表明,胚后发育时间亦随温度升高而缩短。实验结果表明,卵的发育时间约占世代发育时间的31％(24—41％);胚后发育时间约占69％(59—76％)。本文还同其他研究者所获得的卵的发育时间与温度间的回归方程式、胚后发育

Complete genome sequence of lymphocystis disease virus isolated from China

Lymphocystis diseases in fish throughout the world have been extensively described. Here we report the complete genome sequence of lymphocystis disease virus isolated in China (LCDV-C), an LCDV isolated from cultured flounder (Paralichthys olivaceus) with lymphocystis disease in China. The LCDV-C genome is 186,250 bp, with a base composition of 27.25% G+C. Computer-assisted analysis revealed 240 potential open reading frames (ORFs) and 176 nonoverlapping putative viral genes, which encode polypeptides ranging from 40 to 1,193 amino acids. The percent coding density is 67%, and the average length of each ORF is 702 bp. A search of the GenBank database using the 176 individual putative genes revealed 103 homologues to the corresponding ORFs of LCDV-1 and 73 potential genes that were not found in LCDV-1 and other iridoviruses. Among the 73 genes, there are 8 genes that contain conserved domains of cellular genes and 65 novel genes that do not show any significant homology with the sequences in public databases. Although a certain extent of similarity between putative gene products of LCDV-C and corresponding proteins of LCDV-1 was revealed, no colinearity was detected when their ORF arrangements and coding strategies were compared to each other, suggesting that a high degree of genetic rearrangements between them has occurred. And a large number of tandem and overlapping repeated sequences were observed in the LCDV-C genome. The deduced amino acid sequence of the major capsid protein (MCP) presents the highest identity to those of LCDV-1 and other iridoviruses among the LCDV-C gene products. Furthermore, a phylogenetic tree was constructed based on the multiple alignments of nine MCP amino acid sequences. Interestingly, LCDV-C and LCDV-1 were clustered together, but their amino acid identity is much less than that in other clusters. The unexpected levels of divergence between their genomes in size, gene organization, and gene product identity suggest that LCDV-C and LCDV-1 shouldn't belong to a same species and that LCDV-C should be considered a species different from LCDV-1.

Fabrication and Infrared Optical Properties of Nano Vanadium Dioxide Thin Films

Vanadium dioxide thin films were fabricated by ion beam sputtering on Si3N4/SiO2/Si after a post reductive annealing process in a nitrogen atmosphere. X-ray Diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the effects of post annealing temperature on crystallinity, morphology, and composition of the vanadium oxide thin films. Transmission properties of vanadium dioxide thin films were measured by Fourier transform-infrared (FT-IR) spectroscopy. The results showed that the as-deposited vanadium oxide thin films were composed of non-crystalline V2O5 and a tetragonal rutile VO2. After annealing at 400 degrees C for 2 h, the mixed phase vanadium oxide (VOx) thin film changed its composition and structure to VO2 and had a (011) oriented monoclinic rutile structure. When increasing the temperature to 450 degrees C, nano VO2 thin films with smaller grains were obtained. FT-IR results showed that the transmission contrast factor of the nano VO2 thin film was more than 0.99 and the transmission of smaller grain nano VO2 thin film was near zero at its switched state. Nano VO2 thin film with smaller grains is an ideal material for application in optical switching devices.

Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell

GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160A degrees C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ (sc)/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 mu A/cm(2)/A degrees C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV (oc)/dT calculated based on a theoretical equation are -2.4 mV/A degrees C and -2.1 mV/A degrees C for GaInP subcell and GaAs subcell.

Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers

We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450 degrees C and 2.1 nm, respectively. A rms surface roughness of 0.67 nm over 10 x 10 mu m(2) is achieved as a 0.5 mu m GaSb film is grown under optimized conditions.

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm(2). Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22-40) mA and (0.2-0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90 degrees C under power of 5 mW. After operating under 90 degrees C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25 degrees C and the operation currents at 5 mW (at 25 degrees C) are (2-3) mA and (3-5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50 degrees C and 2.5 mW.

Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth

When liquid phase epitaxy regrowth at 780 degrees C for 2 h is applied to the samples after molecular beam epitaxy, a decrease of the threshold current density in strained InGaAs/GaAs quantum well lasers by a factor of 3 to 4 is obtained. We suggest that this improvement is attributed to the reduction of nonradiative centers associated with deep levels at the three regions of the active region, the graded layer and the cladding layer. Indeed, a significant reduction of deep center densities has been observed by using minority and majority carrier injection deep level transient spectroscopy measurements. (C) 1998 Elsevier Science B.V. All rights reserved.

Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing

VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400 degrees C for 2 hours. The film also shows a polycrystal structure with grain size from 50nm to 150nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition.

使用压缩函数的非平衡Feistel结构的伪随机性和超伪随机性

从可证明安全的角度研究使用压缩函数的非平衡Feistel结构(UFN-C)的安全性,证明了k+1轮UFN-C是伪随机的,k+2轮UFN-C是超伪随机的;进一步地,探讨了UFN-C的有效构造,降低了Naor和Reingold在1999年文章中类似结构对伪随机函数个数的要求.最后,针对一类具体的UFN-C--SMs4,分析其广义形式SMS4-like结构的伪随机性和超伪随机性,为设计与使用该类结构的分组密码提供了可证明安全的理论依据.

沼气渣养殖蚯蚓的试验研究

本试验结果表明:(1)沼气渣可以用来养殖蚯蚓，但必须冲洗、凉干，排除过多的有毒气体.用醋酸调节PH值，用稻谷糠改变C/N和增加通气性.(2)不同配比的沼气渣对蚯蚓的增长速度、繁殖倍数的影响有所不同，其中B组最好，A组次之，C组最差，这是因为各组的C/N不同，B组的C/N最适于蚯蚓的生长繁殖之故.本试验研究提出了一个以稻草为原料，沼气发酵为基础，蚯蚓为中心环节的良性生态循环.这种循环不但能提高稻草的经济效益，而且是消除环境污染，解决农村能源的一个简便实惠、行之有效的办法.