Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing
| Data(s) |
2008
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| Resumo |
VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400 degrees C for 2 hours. The film also shows a polycrystal structure with grain size from 50nm to 150nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition. VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400 degrees C for 2 hours. The film also shows a polycrystal structure with grain size from 50nm to 150nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition. zhangdi于2010-03-09批量导入 zhangdi于2010-03-09批量导入 IEEE. [Wang, Xiaodong; Ji, An; Yang, Fuhua] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China IEEE. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Wang, XD ; Li, GK ; Liang, JR ; Ji, A ; Hu, M ; Yang, FH ; Liu, J ; Wu, NJ ; Chen, HD .Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing .见：IEEE .2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE,345 E 47TH ST, NEW YORK, NY 10017 USA ,2008,VOLS 1-3: 857-859 |
| Palavras-Chave | #微电子学 #V2O5 THIN-FILMS |
| Tipo |
会议论文 |
