The impact of imperfect symmetry on band edge modes of a two-dimensional photonic crystal with square lattice

A theoretical analysis has been performed by means of the plane-wave expansion method to examine the dispersion properties of photons at high symmetry points of an InP based two-dimensional photonic crystal with square lattice. The Q factors are compared qualitatively. The mechanism of surface-emitting is due to the photon manipulation by periodic dielectric materials in terms of Bragg diffraction. A surface-emitting photonic crystal resonator is designed based on the phenomenon of slow light. Photonic crystal slabs with different unit cells are utilized in the simulation. The results indicate that the change of the air holes can affect the polarization property of the modes. So we can find a way to improve the polarization by reducing the symmetry of the structure.

Single-photon source in strong photon-atom interaction regime in quasiperiodic photonic crystals

The antibunching properties of the fluorescence from a two-level ideal system in a 12-fold quasiperiodic photonic crystal are investigated based on the calculated local density of states. We found that the antibunching phenomenon of the fluorescence from two-level ideal systems could be significantly changed by varying their positions, i.e., perfect antibunching and antibunching with damped Rabi oscillation phenomenon occurred in different positions and at different frequencies in photonic crystals as a result of the large differences in the local density of states. This study revealed that the multi-level coherence of fluorescence from a two-level ideal system could be manipulated by controlling the position of the two-level ideal system in photonic crystals and the emission frequency in the photonic band structure. Copyright (C) EPLA, 2008

The research and progress of micro-fabrication technologies of two-dimensional photonic crystal

The novel material of photonic crystal makes it possible to control a photon, and the photonic integration will have breakthrough progress due to the application of photonic crystal. It is based on the photonic crystal device that the photonic crystal integration could be realized. Therefore, we should first investigate photonic crystal devices based on the active and the passive semiconductor materials, which may have great potential application in photonic integration. The most practical and important method to fabricate two-dimensional photonic crystal is the micro-manufacture method. In this paper, we summarize and evaluate the fabrication methods of two-dimensional photonic crystal in near-infrared region, including electron beam lithography, selection of mask, dry etching, and some works of ours. This will be beneficial to the study of the photonic crystal in China.

Photon localization in amorphous photonic crystal

The photon localization in disordered two-dimensional photonic crystal is studied theoretically. It is found that the mean transmission coefficient in the photonic band decreases exponentially as the disorder degree increases, reflecting the occurrence of Anderson localization. The strength of photon localization can be controlled by tuning the disorder degree in the photonic crystal. We think the variation regular of the transmission coefficient in our disordered system is equivalent to that of the scaling theory of localization.

Photon localization in amorphous photonic crystal

The photon localization in disordered two-dimensional photonic crystal is studied by use of multiple- scattering method. The disorder degree can be controlled by adjusting the random rotating angle of the square cell. It is found that the transmission in the band decreases and that in the gap increases as the disorder degree increases, and localization induced by disorder will spread from the band gap edge to the band center and the gap center. Moreover, the mean transmission of the band will decrease exponentiatly with disorder increasing.

Design of two-dimensional photonic crystal edge emitting laser for photonic integrated circuits

An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benelits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2(lambda/eta(slab))(3) for oscillation -mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300.

Influences of quantum noises on direct-modulated properties of 1.3-mu m InGaAsP/InP laser diodes

Due to the zero dispersion point at 1.3-mu m in optical fibres, 1.3-mu m InGaAsP/InP laser diodes have become main light sources in fibre communication systems recently. In fluences of quantum noises on direct-modulated properties of single-mode 1.3-mu m InGaAsP/InP laser diodes are investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated single-mode laser system are calculated using the linear approximation method. We find that the stochastic resonance (SR) always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coeffcient between the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated InGaAsP/InP laser diodes and improve the quality of optical fibre communication systems.

Operation of the qubit based on photon-assisted tunneling in a coupled quantum-dot system and the influence of dephasing

We derive the generalized rate equation for the coupled quantum-dot (QD) system irradiated by a microwave field in the presence of a quantum point contact. It is shown that when a microwave field is tuned in resonance with the energy difference between the ground states of two QD's, the photon-assisted tunneling occurs and, as a result, the coupled QD system may be used as the single qubit. Furthermore, we show that the oscillating current through the detector decays drastically as the dephasing rate increases, indicating clearly the influence of the dephasing effect induced by the quantum point contact used as a detecting device.

AlGaInP LED with surface structure of two-dimensional photonic crystal

Some progress in the research of GaN based LED with photonic crystal structure has been made recently. Based on the photonic crystal's photonic band gap effect and photon grating diffraction principle, the extraction efficiency of LED with photonic crystal can be improved. In this paper, the restriction on AlGaInP LED's extraction efficiency is analyzed, and the photonic crystal is introduced in to the AlGaInP LED to improve the extraction efficiency. The theoretical analyses and the experiment results show that the output luminous intensity of LED with photonic crystal is improved by 16%, which results from some effect of the GaN based LED with photonic crystal.

Study on the localization of the electric dipole sources

The research of dipole source localization has great significance in both clinical research and applications. For example, the EEG recording from the scalp is widely used for the localization of sources of electrical activity in the brain. This paper presents a closed formula that describes the electric field of dipoles at arbitrary position, which is a linear transformer called the transfer matrix. The expression of transfer matrix and its many useful characteristics are given, which can be used for the analysis of the electrical fields of dipoles. This paper also presents the closed formula for determining the location and magnitude of single dipole or multi-dipoles according to its electrical field distribution. A calculation result for a single dipole shows that the dipole will be located at the midpoint of a line segment if there are equivalent fields at its two ends.

High-order harmonic generation and multi-photon ionization of Na-2 in laser fields

In this paper high-order harmonic generation (HHG) spectra and the ionization probabilities of various charge states of small cluster Na-2 in the multiphoton regimes are calculated by using time-dependent local density approximation (TDLDA) for one-colour (1064 nm) and two-colour (1064 nm and 532 nm) ultrashort (25 fs) laser pulses. HHG spectra of Na2 have not the large extent of plateaus due to pronounced collective effects of electron dynamics. In addition, the two-colour laser field can result in the breaking of the symmetry and generation of the even order harmonic such as the second order harmonic. The results of ionization probabilities show that a two-colour laser field can increase the ionization probability of higher charge state.

Photon production in a chemically equilibrating quark-gluon plasma at finite Baryon density: Complete leading order results

We investigate hard photon production of the near-collinear bremsstrahlung and a new process called the inelastic pair annihilation, fully including the LPM effect, in a chemically equilibrating quark-gluon plasma at finite baryon density, and find that the effect of the system evolution on the photon production and large contribution of the bremsstrahlung make the total photon yield of the two processes as a strongly increasing function of the initial quark chemical potential.

Different microstructures of ss-NaYF4 fabricated by hydrothermal process: Effects of pH values and fluoride sources

beta-NaYF4 microcrystals with a variety of morphologies, such as microrod, hexagonal microprism, and octadecahedron, have been synthesized via a facile hydrothermal route. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) spectra were used to characterize the samples. The intrinsic structural feature of beta-NaYF4 seeds and two important external factors, namely, the pH values in the initial reaction solution and fluoride sources, are responsible for shape determination of beta-NaYF4 microcrystals. It is found that the organic additive trisodium citrate (Cit(3-)) as a shape modifier has the dynamic effect by adjusting the growth rate of different facets under different experimental conditions, resulting in the formation of the anisotropic geometries of various beta-NaYF4 microcrystals. The possible formation mechanisms for products with various architectures have been presented. A systematic study on the photoluminescence of Tb3+-doped beta-NaYF4 samples with rod, prism, and octadecahedral shapes has shown that the optical properties of these phosphors are strongly dependent on their morphologies and sizes.

Reagent-controlled asymmetric iodolactonization using cinchona alkaloids as chiral sources

A novel method for reagent-controlled asymmetric iodolactonization of 5-aryl-4-pentenoic acids is reported. This work uses carboxylate ion pairs combined with cinchona alkaloids as chiral sources of carboxylate anion for the first time leading to a mixture of two regio-isomeric iodolactones with moderate enantioselectivity (exo- 18.5% ee, endo-35.0% ee) under mild reaction conditions.