Influence of the network modifier on the characteristics of MSnO3 (M=Sr and Ca) thin films synthesized by chemical solution deposition

CaSnO3 and SrSnO3 alkaline earth stannate thin films were prepared by chemical solution deposition using the polymeric precursor method on various single crystal substrates (R- and C-sapphire and 100-SrTiO3) at different temperatures. The films were characterized by X-ray diffraction (θ-2θ, ω- and φ-scans), field emission scanning electron microscopy, atomic force microscopy, micro-Raman spectroscopy and photoluminescence. Epitaxial SrSnO3 and CaSnO3 thin films were obtained on SrTiO3 with a high crystalline quality. The long-range symmetry promoted a short-range disorder which led to photoluminescence in the epitaxial films. In contrast, the films deposited on sapphire exhibited a random polycrystalline growth with no meaningful emission regardless of the substrate orientation. The network modifier (Ca or Sr) and the substrate (sapphire or SrTiO3) influenced the crystallization process and/or the microstructure. Higher is the tilts of the SnO6 octahedra, as in CaSnO3, higher is the crystallization temperature, which changed also the nucleation/grain growth process.

Spin polarized transport in manganese oxide double-perovskite thin films

Gegenstand dieser Arbeit war die Untersuchung von metallischen gemischtvalenten Manganaten und magnetischen Doppelperowskiten. Aufgrund ihres großen negativen Magnetowiderstandes (MW) sind diese halbmetallischen Oxide interessant für mögliche technische Anwendungen, z.B. als Leseköpfe in Festplatten. Es wurden die kristallographischen, elektronischen und magnetischen Eigenschaften von epitaktischen Dünnschichten und polykristallinen Pulverproben bestimmt.Epitaktische Dünnschichten der Verbindungen La_0.67Ca_0.33MnO₃ und La_0.67Sr_0.33MnO₃ wurdenmit Kaltkathodenzerstäubung und Laserablation auf einkristallinen Substraten wie SrTiO₃abgeschieden. Mit Hall-Effekt Messungen wurde ein Zusammenbruch der Ladungsträgerdichte bei der Curie-Temperatur T_C beobachtet.Mit dem Wechsel des Dotierungsatoms A von Ca (T_C=232 K) zu Sr (T_C=345 K)in La_0.67A_0.33MnO₃ konnte die Feldsensitivität des Widerstandes bei Raumtemperatur gesteigert werden. Um die Sensitivität weiter zu erhöhen wurde die hohe Spinpolarisation von nahezu 100% in Tunnelexperimenten ausgenutzt. Dazu wurden biepitaktische La_0.67Ca_0.33MnO₃ Schichten auf SrTiO₃ Bikristallsubstraten hergestellt. Die Abhängigkeit des Tunnelmagnetowiderstandes (TMW) vom magnetischen Feld, Temperatur und Strum war ein Schwerpunkt der Untersuchung. Mittels spinpolarisierten Tunnelns durch die künstliche Korngrenze konnte ein hysteretischer TMW von 70% bei 4 K in kleinen Magnetfeldern von 120 Oe gemessen werden. Eine weitere magnetische Oxidverbindung, der Doppelperowskit Sr₂FeMoO₆ miteine Curie-Temperatur oberhalb 400 K und einem großen MW wurde mittels Laserablation hergestellt. Die Proben zeigten erstmals das Sättigunsmoment, welches von einer idealen ferrimagnetischen Anordnung der Fe und Mo Ionen erwartet wird. Mit Hilfe von Magnetotransportmessungen und Röntgendiffraktometrie konnte eine Abhängigkeit zwischen Kristallstruktur (Ordnung oder Unordnung im Fe, Mo Untergitter) und elektronischem Transport (metallisch oder halbleitend) aufgedeckt werden.Eine zweiter Doppelperowskit Ca₂FeReO₆ wurde im Detail als Pulverprobe untersucht. Diese Verbindung besitzt die höchste Curie-Temperatur von 540 K, die bis jetzt in magnetischen Perowskiten gefunden wurde. Mit Neutronenstreuung wurde eine verzerrte monoklinische Struktur und eine Phasenseparation aufgedeckt.

Thin films of polythiophene: Linear and nonlinear optical characterization

Wir haben die linearen und nichtlinearen optischen Eigenschaften von dünnen Schichten und planaren Wellenleitern aus mehreren konjugierten Polymeren (MEH-PPV und P3AT) und Polymeren mit -Elektronen Systemen in der Seitenkette (PVK und PS) untersucht und verglichen. PVK und PS haben relativ kleine Werte des nichtlinearen Brechungsindex n2 bei 532 nm, nämlich (1,2 ± 0,5)10-14 cm2/W und (2,6 ± 0,5) 10-14 cm2/W.rnWir haben die linearen optischen Konstanten von mehreren P3ATs untersucht, insbesondere den Einfluss der Regioregularität und Kettenlänge der Alkylsubstituenten. Wir haben das am besten geeignete Polymere für Wellenleiter Anwendungen identifiziert, welches P3BT-ra genannt ist. Wir haben die linearen optischen Eigenschaften dünner Schichten des P3BT-ra untersucht, die mit Spincoating aus verschiedenen Lösungsmitteln mit unterschiedlichen Siedetemperaturen präparieret wurden. Wir haben festgestellt, dass P3BT-ra Filme aus Toluol-Lösungen die am besten geeigneten Wellenleiter für die intensitätsabhängigen Prismen-Kopplungs Experimente sind, weil diese geringe Wellenleiterdämpfungsverluste bei = 1064 nm haben. rnWir haben die Dispersionen des Wellenleiterdämfungsverlustes gw, des nichtlinearen Brechungsindex n2 und des nichtlinearen Absorptionskoeffizienten 2 von Wellenleitern aus P3BT-ra im Bereich von 700 - 1500 nm gemessen. Wir haben große Werte des nichtlinearen Brechungsindex bis 1,5x10-13 cm2/W bei 1150 nm beobachtet. Wir haben gefunden, dass die Gütenkriterien (“figures of merit“) für rein optische Schalter im Wellenlängebereich 1050 - 1200 nm erfüllt sind. Dieser Bereich entspricht dem niederenergetischen Ausläufer der Zwei-Photonen-Absorption. Die Gütekriterien von P3BT-ra gehören zu den besten der bisher bekannten Werte von konjugierten Polymeren.rnWir haben gefunden, dass P3BT-ra ein vielversprechender Kandidat für integriert-optische Schalter ist, weil es eine gute Kombination aus großer Nichtlinearität dritter Ordnung, geringen Wellenleiterdämpfungverlusten und ausreichender Photostabilität zeigt. rnWir haben einen Vergleich der gemessenen Dispersion von gw, n2 und 2 mit der Theorie durchgeführt. Durch Kurvenanpassung der Dispersion von gw haben wir gefunden, dass Rayleigh-Streuung der dominierende Dämpfungsmechanismus in MEH-PPV und P3BT-ra Wellenleitern ist. Ein quantenmechanischer Ansatz wurde zur Berechnung der nichtlinearen Suszeptibilität dritter Ordnung (3) verwendet, um die gemessenen Spektren von n2 und 2 von P3BT-ra und MEH-PPV zu simulieren. Dies kann erklären, dass sättigbare Absorption und Zwei-Photonen Absorption die hauptsächlichen Effekte sind, welche die Dispersion von n2 und 2 verursachen. rn

Morphological and optical properties of SiON thin films for photovoltaic applications

In the last years technologies related to photovoltaic energy have rapidly developed and the interest on renewable energy power source substantially increased. In particular, cost reduction and appropriate feed-in tariff contributed to the increase of photovoltaic installation, especially in Germany and Italy. However, for several technologies, the observed experimental efficiency of solar cells is still far from the theoretical maximum efficiency, and thus there is still room for improvement. In this framework the research and development of new materials and new solar devices is mandatory. In this thesis the morphological and optical properties of thin films of nanocrystalline silicon oxynitride (nc-SiON) have been investigated. This material has been studied in view of its application in Si based heterojunction solar cells (HIT). Actually, a-Si:H is used now in these cells as emitter layer. Amorphous SiO_x N_y has already shown excellent properties, such as: electrical conductivity, optical energy gap and transmittance higher than the ones of a-Si:H. Nc-SiO_x N_y has never been investigated up to now, but its properties can surpass the ones of amorphous SiON. The films of nc-SiON have been deposited at the University of Konstanz (Germany). The properties of these films have been studied using of atomic force microscopy and optical spectroscopy methods. This material is highly complex as it is made by different coexisting phases. The main purpose of this thesis is the development of methods for the analyses of morphological and optical properties of nc-SiON and the study of the reliability of those methods to the measurement of the characteristics of these silicon films. The collected data will be used to understand the evolution of the properties of nc-SiON, as a function of the deposition parameters. The results here obtained show that nc-SiON films have better properties with respect to both a-Si:H and a-SiON, i. e. higher optical band-gap and transmittance. In addition, the analysis of the variation of the observed properties as a function of the deposition parameters allows for the optimization of deposition conditions for obtaining optimal efficiency of a HIT cell with SiON layer.

Fabrication of high-k dielectric thin films for spintronics

Lo scopo di questa tesi è la fabbricazione di ossidi complessi aventi struttura perovskitica, per mezzo della tecnica Channel Spark Ablation (CSA). Più precisamente sono stati depositati film sottili di manganite (LSMO), SrTiO3 (STO) e NdGaO3 (NGO). Inoltre nel laboratorio ospite è stata effettuata la caratterizzazione elettrica e dielettrica (spettroscopia di impedenza), mentre per l'analisi strutturale e chimica ci si è avvalsi di collaborazioni. Sono stati fabbricati dispositivi LSMO/STO/Co e se ne è studiato il comportamento magnetoresistivo e la bistabilità elettrica a seconda del carattere epitassiale od amorfo dell'STO. I risultati più promettenti sono stati ottenuti con STO amorfo. Sono stati costruiti diversi set di condensatori nella configurazione Metallo/Isolante/Semiconduttore (MIS), con M=Au, I=STO o NGO ed S=Nb:STO, allo scopo di indagare la dipendenza delle proprietà dielettriche ed isolanti dai parametri di crescita. In particolare ci si è concentrati sulla temperatura di deposizione e, nel caso dei film di STO, anche sulla dipendenza della costante dielettrica dallo spessore del film. Come ci si aspettava, la costante dielettrica relativa dei film di STO (65 per un film spesso 40 nm e 175 per uno di 170 nm) si è rivelata maggiore di quella dei film di NGO per i quali abbiamo ottenuto un valore di 20, che coincide con il valore del bulk. Nonostante l'elevata capacità per unità di area ottenibile con l'STO, la costante dielettrica di questo materiale risulta fortemente dipendente dallo spessore del film. Un ulteriore aspetto critico relativo all'STO è dato dal livello di ossidazione del film: le vacanze di ossigeno, infatti, possono ridurre la resistività dell'STO (nominalmente molto elevata), ed aumentarne la corrente di perdita. Al contrario l'NGO è meno sensibile ai processi tecnologici e, allo stesso tempo, ha un valore di costante dielettrica più alto rispetto ad un tipico dielettrico come l'ossido di silicio.

Morphological characterization of ZnS thin films for photovoltaic applications

Le celle solari a film sottile sono tra le alternative più promettenti nel campo fotovoltaico. La ricerca di materiali non tossici ed economici per la passivazione delle superfici è di fondamentale importanza. Il presente è uno studio sulla morfologia di film sottili di ZnS. I campioni analizzati sono stati cresciuti tramite DC sputtering a diversa potenza (range 50-150W) per studiare le connessioni tra condizioni di deposizione e proprietà strutturali. Lo studio è stato condotto mediante acquisizione di mappe AFM. E' stata effettuata un'analisi dei buchi (dips) in funzione della potenza di sputtering, per individuare il campione con la minore densità di dips in vista di applicazioni in celle solari a film sottile. I parametri strutturali, quali la rugosità superficiale e la lunghezza di correlazione laterale sono stati determinati con un'analisi statistica delle immagini. La densità e dimensione media dei grani sono state ricavate da una segmentazione delle immagini. Le analisi sono state svolte su due campioni di ZnO per fini comparativi. Tramite EFM sono state ottenute mappe di potenziale di contatto. Tramite KPFM si è valutata la differenza di potenziale tra ZnS e un layer di Al depositato sulla superficie. La sheet resistance è stata misurata con metodo a quattro punte. Dai risultati la potenza di sputtering influenza la struttura superficiale, ma in maniera non lineare. E' stato individuato il campione con la minore rugosità e densità di dips alla potenza di 75 W. Si è concluso che potenze troppo grandi o piccole in fase di deposizione promuovono il fenomeno di clustering dei grani e di aumentano la rugosità e densità di dips. E' emersa una corrispondenza diretta tra morfologia e potenziale di contatto alla superficie. La differenza di potenziale tra Al e ZnS è risultata inferiore al valore noto, ciò può essere dovuto a stati superficiali indotti da ossidi. Il campione risulta totalmente isolante.

Nanoscale switching characteristics of nearly tetragonal BiFeO3 thin films

We have investigated the nanoscale switching properties of strain-engineered BiFeO(3) thin films deposited on LaAlO(3) substrates using a combination of scanning probe techniques. Polarized Raman spectral analysis indicates that the nearly tetragonal films have monoclinic (Cc) rather than P4mm tetragonal symmetry. Through local switching-spectroscopy measurements and piezoresponse force microscopy, we provide clear evidence of ferroelectric switching of the tetragonal phase, but the polarization direction, and therefore its switching, deviates strongly from the expected (001) tetragonal axis. We also demonstrate a large and reversible, electrically driven structural phase transition from the tetragonal to the rhombohedral polymorph in this material, which is promising for a plethora of applications.

Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films

The lattice order degree and the strain in as-grown, Mn-implanted and post-implantedannealedInAsthinfilms were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements

Effect of substrate-target distance and sputtering pressure in the synthesis of AlN thin films

In this work, we analyze the influence of the processing pressure and the substrate–target distance on the synthesis by reactive sputtering of c-axis oriented polycrystalline aluminum nitride thin films deposited on Si(100) wafers. The crystalline quality of AlN has been characterized by high-resolution X-ray diffraction (HR-XRD). The films exhibited a very high degree of c-axis orientation especially when a low process pressure was used. After growth, residual stress measurements obtained indirectly from radius of curvature measurements of the wafer prior and after deposition are also provided. Two different techniques are used to determine the curvature—an optically levered laser beam and a method based on X-ray diffraction. There is a transition from compressive to tensile stress at a processing pressure around 2 mTorr. The transition occurs at different pressures for thin films of different thickness. The degree of c-axis orientation was not affected by the target–substrate distance as it was varied in between 30 and 70 mm.

BETA Zeolite Thin Films Supported on Honeycomb Monoliths with Tunable Properties as Hydrocarbon Traps under Cold-Start Conditions

A high percentage of hydrocarbon (HC) emissions from gasoline vehicles occur during the cold-start period. Among the alternatives proposed to reduce these HC emissions, the use of zeolites before the three-way catalyst (TWC) is thought to be very effective. Zeolites are the preferred adsorbents for this application; however, to avoid high pressure drops, supported zeolites are needed. In this work, two coating methods (dip-coating and in situ crystallization) are optimized to prepare BETA zeolite thin films supported on honeycomb monoliths with tunable properties. The important effect of the density of the thin film in the final performance as a HC trap is demonstrated. A highly effective HC trap is prepared showing 100 % toluene retention, accomplishing the desired performance as a HC trap, desorbing propene at temperatures close to 300 °C, and remaining stable after cycling. The use of this material before the TWC is very promising, and works towards achieving the sustainability and environmental protection goals.

Potentiostatic Reversible Photoelectrochromism: An Effect Appearing in Nanoporous TiO2/Ni(OH)2 Thin Films

In the field of energy saving, finding composite materials with the ability of coloring upon both illumination and change of the applied electrode potential keeps on being an important goal. In this context, chemical bath deposition of Ni(OH)2 into nanoporous TiO2 thin films supported on conducting glass leads to electrodes showing both conventional electrochromic behavior (from colorless to dark brown and vice versa) together with photochromism at constant applied potential. The latter phenomenon, reported here for the first time, is characterized by fast and reversible coloration upon UV illumination. The bleaching kinetics shows first order behavior with respect to the NiIII centers in the film, and an order 1.2 with respect to electrons in the TiO2 film. From a more applied point of view, this study opens up the possibility of having two-mode smart windows showing not only conventional electrochromism but also reversible darkening upon illumination.

Water-triggered spontaneous surface patterning in thin films of mexylaminotriazine molecular glasses

Surface patterning that occurs spontaneously during the formation of a thin film is a powerful tool for controlling film morphology at the nanoscale level because it avoids the need for further processing. However, one must first learn under which conditions these patterning phenomena occur or not, and how to achieve control over the surface morphologies that are generated. Mexylaminotriazine-based molecular glasses are small molecules that can readily form amorphous thin films. It was discovered that this class of materials can either form smooth films, or films exhibiting either dome or pore patterns. Depending on the conditions, these patterns can be selectively obtained during film deposition by spin-coating. It was determined that this behavior is controlled by the presence of water or, more generally, of a solvent in which the compounds are insoluble, and that the relative amount and volatility of this poor solvent determines which type of surface relief is obtained. Moreover, AFM and FT-IR spectroscopy have revealed that the thin films are amorphous independently of surface morphology, and no difference was observed at the molecular or supramolecular level. These findings make this class of materials and this patterning approach in general extremely appealing for the control of surface morphology with organic nanostructures.

Current induced switching of superconductive thin films,

"This work was supported in part by the General Research Provision of contract between the Air Force and Space Technology Laboratories, Inc., and in part by the Office of Naval Research."

Hydrothermal deposition of cerium hydroxycarbonate thin films on glass

The first success in the preparation of rare earth hydroxycarbonate thin films has been achieved. Cerium hydroxycarbonate films were prepared by a hydrothermal deposition method, the sample of a single orthorhombic phase was deposited at a lower temperature while those of orthorhombic and hexagonal phases were obtained at higher temperatures. The crystals in the films could be ellipsoidal, prismatic, or rhombic, depending on the deposition conditions applied. The thin films could be candidates for developing novel optical materials and for advanced ceramics processing. (C) 2003 Elsevier Science B.V. All rights reserved.