Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films
| Data(s) |
01/04/2011
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|---|---|
| Resumo |
The lattice order degree and the strain in as-grown, Mn-implanted and post-implantedannealedInAsthinfilms were investigated with depth resolution by means of Rutherford backscattering spectrometry in channeling conditions (RBS/C). Three main crystallographic axes were analyzed for both In and As sublattices. The behaviour of the induced defects was evaluated in two regions with different native defects: the interface and the surface. The results show that Mn implantation and post-implantation annealing are anisotropic processes, affecting in a different way the In and As sublattices. The mechanisms influencing the enhancement and deterioration of the crystal quality during the implantation are discussed in relation to the as-grown defects and the segregation of the elements |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
E.T.S.I. Industriales (UPM) |
| Relação |
http://oa.upm.es/11460/2/INVE_MEM_2011_105312.pdf http://dx.doi.org/10.1016/j.nimb.2011.02.004 info:eu-repo/semantics/altIdentifier/doi/10.1016/j.nimb.2011.02.004 |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
Nuclear Instruments and Methods in Physics Research B, ISSN 0167-5087, 2011-04, Vol. 269, No. 8 |
| Palavras-Chave | #Energía Nuclear #Física |
| Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |
