Room-temperature continuous-wave operation of InAs quantum-wire laser on InP(001) substrate

A self-assembled quantum-wire laser structure was grown by solid-source molecular beam epitaxy in an InAlGaAs-InAlAs matrix oil InP(001) substrate. Ridge-waveguide lasers were fabricated and demonstrated to operate at a heatsink temperature tip to 330 K in continuous-wave (CW) mode. The emission wavelength of the lasers with 5 mm-long cavity was 1.713 mu m at room temperature in CW mode. The temperature stability of the devices was analysed and the characteristic temperature was found to be 47 K in the mnge of 220-320 K.

SOI-based 16x16 thermo-optic waveguide switch matrix

A 16 x 16 thermo-optic wavelenght switch matrix has been designed and febricated on silicon-on-insulator wafer. For reducing device lenght, blocking switch matrix configuration is chosen. The building block of a matix is a 2 x 2 cell with Mach-Zehnder interferometer configuration, where a multi-mode interferometer serves as splitters/combiners. Spot size converters and isolating grooves are integrated on the same chip to reduce loss and power consumption. Average power consumption of the switch cell is 220 mW. The switching time of a switch cell is less than 3 mu s.

Structural evaluation of polycrystalline silicon thin films by hot-wire-assisted PECVD

Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.

Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots

The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 degreesC, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 degreesC, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 degreesC and that of the short-wavelength quantum-dot laser previously reported. (C) 2001 American Institute of Physics.

Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

Infrared absorption spectroscopy, optical transient current spectroscopy (OTCS), and photoluminescence (PL) spectroscopy are used to investigate the annealing induced evolution of defects in low-temperature (LT)-grown GaAs-related materials. Two LT samples of bulk GaAs (sample A) and GaAs/AlxGa1-xAs multiple-quantum-well. (MQW) structure (sample B) were grown at 220 and 320 degreesC on (001) GaAs substrates, respectively. A strong defect-related absorption band has been observed in both as-grown samples A and B. It becomes weaker in samples annealed at temperatures above 600 degreesC. In sample A, annealed in the range of 600-800 degreesC, a large negative decay signal of the optical transient current (OTC) is observed in a certain range of temperature, which distorts deep-level spectra measured by OTCS, making it difficult to identify any deep levels. At annealing temperatures of 600 and 700 degreesC, both As-Ga antisite and small As cluster-related deep levels are identified in sample B. It is found that compared to the As cluster, the As-Ga antisite has a larger activation energy and carrier capture rate. At an annealing temperature of 800 degreesC, the large negative decay signal of the OTC is also observed in sample B. It is argued that this negative decay signal of the OTC is related to large arsenic clusters. For sample B, transient PL spectra have also been measured to study the influence of the, defect evolution on optical properties of LT GaAs/AlxGa1-xAs MQW structures. Our results clearly identify a defect evolution from AS(Ga) antisites to arsenic clusters after annealing.

Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy

Optical transient current spectroscopy (OTCS) has been used to investigate defects in the low-temperature-grown GaAs after postgrowth rapid thermal annealing (RTA). Two samples A and B were grown at 220 degreesC and 360 degreesC on (001) GaAs substrates, respectively. After growth, samples were subjected to 30s RTA in the range of 500-800 degreesC. Before annealing, X-ray diffraction measurements show that the concentrations of the excess arsenic for samples A and B are 2.5 x 10(19) and 1 x 10(19) cm(-3), respectively. It is found that there are strong negative decay signals in the optical transient current (OTC) for the annealed sample A. Due to the influence of OTC strong negative decay signals, it is impossible to identify deep levels clearly from OTCS. For a comparison, three deep levels can be identified for sample B before annealing. They are two shallower deep levels and the so-called As-Ga antisite defect. At the annealing temperature of 600 degreesC, there are still three deep levels. However, their structures are different from those in the as-grown sample. OTC strong negative decay signals are also observed for the annealed sample B. It is argued that OTC negative decay signals are related to arsenic clusters. (C) 2000 Elsevier Science B.V. All rights reserved.

Strain-compensated quantum cascade lasers operating at room temperature

Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP substrate using molecular beam epitaxy is reported. The epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal X-ray diffraction and cross-section transmission electron microscopy of the QC laser wafer. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 3.6-3.7 mum at room temperature (34 degreesC) for 20 mum x 1.6 mm devices, with peak output powers of similar to 10.6mW and threshold current density of 2.7kA/cm(2) at this temperature. (C) 2000 Published by Elsevier Science B.V.

The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy

Three n-p-n Si/SiGe/Si heterostructures with different layer thickness and doping concentration have been grown by a home-made gas source molecular-beam epitaxy (GSMBE) system using phosphine (PH3) and diborane (B2H6) as n-and p-type in situ doping sources, respectively. Heterojunction bipolar transistors (HBTs) have been fabricated using these structures and a current gain of 40 at 300 K and 62 at 77 K have been obtained. The influence of thickness and doping concentration of the deposited layers on the current gain of the HBTs is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

As reported by other authors, we have also observed that the Si growth rate decreases with increasing phosphine (PH3) flow rate in gas source-Si molecular beam epitaxy using phosphorous (P) as a n-type dopant. Why small quantity PH3 can affect Si growth rate? Up to now, the quantitative characterization of PH3 flow influence on Si growth rate is little known. In this letter, the PH, influence will be analyzed in detail and a model considering strong P surface segregation and its absorption of hydrogen will be proposed to characterize the effect. (C) 2000 Elsevier Science B.V. All rights reserved.

Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers

We report on a detailed investigation on the temperature-dependent behavior of photoluminescence from molecular beam epitaxy (MBE)-grown chlorine-doped ZnSe epilayers. The overwhelming neutral donor bound exciton ((ClX)-X-0) emission at 2.797 eV near the band edge with a full-width at half-maximum (FWHM) of similar to 13 meV reveals the high crystalline quality of the samples used. In our experiments, the quick quenching of the (ClX)-X-0 line above 200 K is mainly due to the presence of a nonradiative center with a thermal activation energy of similar to 90 meV, The same activation energy and similar quenching tendency of the (ClX)-X-0 line and the I-3 line at 2.713 eV indicate that they originate from the same physical mechanism. We demonstrate for the first time that the dominant decrease of the integrated intensity of the I, line is due to the thermal excitation of the "I-3 center"-bound excitons to its free exciton states, leaving the "I-3 centers" as efficient nonradiative centers. The optical performance of ZnSe materials is expected to be greatly improved if the density of the "I-3 center" can be controlled. The decrease in the luminescence intensity at moderately low temperature (30-200 K) of the (ClX)-X-0 line is due to the thermal activation of neutral-donor-bound excitons ((ClX)-X-0) to free excitons. (C) 2000 Published by Elsevier Science B.V.

Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer

We have studied the effects of postgrowth rapid thermal annealing on the optical properties of 3-nm-height InAs/GaAs quantum dots covered by 3-nm-thick InxGa1-xAs (x = 0, 0.1, and 0.2) overgrowth layer. At higher annealing temperature (T greater than or equal to 750 degreesC), the photoluminescence peak of InGaAs layer has been observed at lower-energy side of the InAs quantum-dot peak. In addition, the blueshift in photoluminescence (PL) emission energy is found to he similar for all samples with increasing the annealing temperature from 650 to 850 degreesC. However, the trend of narrowing of photoluminescence linewidth is significantly different for InAs quantum dots with different In mole fractions in InGaAs overgrowth layer. These results suggest that the intermixing in the lateral direction plays an important role in helping to understand the modification of optical properties induced by rapid thermal annealing. (C) 2000 Elsevier Science B.V. All rights reserved.

1.35 mu m photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)(1)/(GaAs)(1) monolayer deposition

1.35 mum photoluminescence (PL) with a narrow linewidth of only 19.2 meV at room temperature has been achieved in In0.5Ga0.5As islands structure grown on GaAs (1 0 0) substrate by solid-source molecular beam epitaxy. Atomic force microscopy (AFM) measurement reveals that the 16-ML-thick In0.5Ga0.5As islands show quite uniform InGaAs mounds morphology along the [ 1(1) over bar 0] direction with a periodicity of about 90 nm in the [1 1 0] direction. Compared with the In0.5Ga0.5As alloy quantum well (QW) of the same width, the In0.5Ga0.5As islands structure always shows a lower PL peak energy and narrower full-width at half-maximum (FWHM), also a stronger PL intensity at low excitation power and more efficient confinement of the carriers. Our results provide important information for optimizing the epitaxial structures of 1.3 mum wavelength quantum dots devices. (C) 2000 Elsevier Science B.V. All rights reserved.

Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots

Strong temperature dependence of optical properties has been studied in visible InAlAs/AlGaAs quantum dots, by employing photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. The fast redshift of the exciton emission peak was observed at much lower temperature range compared to that observed in the InAs/GaAs QDs. In TRPL we did not observe the constant decay time even at low temperature. Instead, the observed decay time increases quickly with increasing temperature, showing 2D properties in the transient dynamic process. We attributed our results to the strong lateral coupling effect, which results in the formation of the local minibands or extended states from the discrete energy levels. (C) 2000 Elsevier Science B.V. All rights reserved.

Self-sustained oscillations caused by magnetic field in a weakly-coupled GaAs/AlAs superlattice

We have investigated the influence of transverse magnetic field B up to 14 T at 1.6 K on the tunneling processes of electric field domains in doped weakly coupled GaAs/AlAs superlattices. Three regimes, i.e, stable field domains, current self-sustained oscillations and averaged field distribution are successively observed with increasing B. The mechanisms of switching-over among these regimes are due to B-induced modification of the dependence of the effective electron drift velocity on electric field. The simulated calculation gives a good agreement with the observed experimental results. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

社区宽带综合业务网服务质量保证的研究

社区宽带综合业务网络系统使用交换式以太网技术，在一个物理网络上为社区用户提供Internet接入、数字电视、IP电话等服务，对三网融合进行了实践性探讨。提出并实现了一套保证系统服务质量的方法，并在测试中取得了满意的效果。