Superfocusing of high-M2 semiconductor laser beams:experimental demonstration

The focusing of multimode laser diode beams is probably the most significant problem that hinders the expansion of the high-power semiconductor lasers in many spatially-demanding applications. Generally, the 'quality' of laser beams is characterized by so-called 'beam propagation parameter' M2, which is defined as the ratio of the divergence of the laser beam to that of a diffraction-limited counterpart. Therefore, M2 determines the ratio of the beam focal-spot size to that of the 'ideal' Gaussian beam focused by the same optical system. Typically, M2 takes the value of 20-50 for high-power broad-stripe laser diodes thus making the focal-spot 1-2 orders of magnitude larger than the diffraction limit. The idea of 'superfocusing' for high-M2 beams relies on a technique developed for the generation of Bessel beams from laser diodes using a cone-shaped lens (axicon). With traditional focusing of multimode radiation, different curvatures of the wavefronts of the various constituent modes lead to a shift of their focal points along the optical axis that in turn implies larger focal-spot sizes with correspondingly increased values of M2. In contrast, the generation of a Bessel-type beam with an axicon relies on 'self-interference' of each mode thus eliminating the underlying reason for an increase in the focal-spot size. For an experimental demonstration of the proposed technique, we used a fiber-coupled laser diode with M2 below 20 and an emission wavelength in ~1μm range. Utilization of the axicons with apex angle of 140deg, made by direct laser writing on a fiber tip, enabled the demonstration of an order of magnitude decrease of the focal-spot size compared to that achievable using an 'ideal' lens of unity numerical aperture. © 2014 SPIE.

Multi-kilowatt peak power nanosecond Er-doped fiber laser

We report a two-stage diode-pumped Er-doped fiber amplifier operating at the wavelength of 1550 nm at the repetition rate of 10-100 kHz with an average output power of up to 10 W. The first stage comprising Er-doped fiber was core-pumped at the wavelength of 1480 nm, whereas the second stage comprising double-clad Er/Yb-doped fiber was clad-pumped at the wavelength of 975 nm. The estimated peak power for the 0.4-nm full-width at half-maximum laser emission at the wavelength of 1550 nm exceeded 4-kW level. The initial 100-ns seed diode laser pulse was compressed to 3.5 ns as a result of the 34-dB total amplification. The observed 30-fold efficient pulse compression reveals a promising new nonlinear optical technique for the generation of high power short pulses for applications in eye-safe ranging and micromachining.

High-coherence hybrid Si/III-V semiconductor lasers

The relentlessly increasing demand for network bandwidth, driven primarily by Internet-based services such as mobile computing, cloud storage and video-on-demand, calls for more efficient utilization of the available communication spectrum, as that afforded by the resurging DSP-powered coherent optical communications. Encoding information in the phase of the optical carrier, using multilevel phase modulationformats, and employing coherent detection at the receiver allows for enhanced spectral efficiency and thus enables increased network capacity. The distributed feedback semiconductor laser (DFB) has served as the near exclusive light source powering the fiber optic, long-haul network for over 30 years. The transition to coherent communication systems is pushing the DFB laser to the limits of its abilities. This is due to its limited temporal coherence that directly translates into the number of different phases that can be imparted to a single optical pulse and thus to the data capacity. Temporal coherence, most commonly quantified in the spectral linewidth Δν, is limited by phase noise, result of quantum-mandated spontaneous emission of photons due to random recombination of carriers in the active region of the laser.

In this work we develop a generically new type of semiconductor laser with the requisite coherence properties. We demonstrate electrically driven lasers characterized by a quantum noise-limited spectral linewidth as low as 18 kHz. This narrow linewidth is result of a fundamentally new laser design philosophy that separates the functions of photon generation and storage and is enabled by a hybrid Si/III-V integration platform. Photons generated in the active region of the III-V material are readily stored away in the low loss Si that hosts the bulk of the laser field, thereby enabling high-Q photon storage. The storage of a large number of coherent quanta acts as an optical flywheel, which by its inertia reduces the effect of the spontaneous emission-mandated phase perturbations on the laser field, while the enhanced photon lifetime effectively reduces the emission rate of incoherent quanta into the lasing mode. Narrow linewidths are obtained over a wavelength bandwidth spanning the entire optical communication C-band (1530-1575nm) at only a fraction of the input power required by conventional DFB lasers. The results presented in this thesis hold great promise for the large scale integration of lithographically tuned, high-coherence laser arrays for use in coherent communications, that will enable Tb/s-scale data capacities.

75 mW robust single frequency Yb-doped DFB fiber Bragg grating laser

Incorporating the shielded method and post-processing method, a 75 mW single frequency Yb-doped DFB fiber laser was obtained with a 250 mW laser diode pump source at 978 nm. The threshold of the laser is 2 mW. The laser is single-polarization operation and the output power fluctuation is less than 0.2 mW in one hour when the pump power is 250 mW.

边缘泵浦被动调Q的Nd：YAG薄片激光器

文中报道了一台采用激光二极管部分边缘泵浦方式的高功率薄片激光器，晶体尺寸是1 mm×10 mm×60 mm。Cr4+：YAG被用来作为被动调Q晶体，在重复频率高于10kHz时，获得了脉宽10ns，平均功率70W，斜线效率为36\%的激光输出。通过控制泵浦光束直径的大小，我们在厚度方向得到了近似衍射极限的光束输出。整个激光器结构紧凑，大小为60 mm×174 mm×150 mm。

A Q-swicthed all-solid-state single-longitudinal-mode laser with adjustable pulse-width and high repetition rate

A single-longitudinal-mode (SLM) laser-diode pumped Nd: YAG laser with adjustable pulse width is developed by using the techniques of pre-lasing and changing polarization of birefingent crystal. The Q-switching voltage is triggered by the peak of the pre-lasing pulse to achieve the higher stability of output pulse energy. The output energy of more than 1 mJ is obtained with output energy stability of 3% (rms) at 100 Hz. The pulse-width can be adjusted from 30 ns to 300 ns by changing the Q-switching voltage. The probability of putting out single-longitudinal-mode pulses is almost 100%. The laser can be run over four hours continually without mode hopping.

Efficient excitations of radially and azimuthally polarized Nd 3+:YAG ceramic microchip laser by use of subwavelength multilayer concentric gratings composed of Nb2O5/SiO2

Cylindrical vector beams were produced from laser diode end-pumped Nd:YAG ceramic microchip laser by use of two types of subwavelength multilayer gratings as the axisymmetric-polarization output couplers respectively. The grating mirrors are composed of high- and low-refractive-index (Nb2O5/SiO2) layers alternately while each layer is shaped into triangle and concentric corrugations. For radially polarized laser output, the beam power reached 610mW with a polarization extinction ratio ( PER) of 61: 1 and a slope efficiency of 68.2%; for azimuthally polarized laser output, the beam power reached 626mW with a PER of 58: 1 and a slope efficiency of 47.6%. In both cases, the laser beams had near-diffraction limited quality. Small differences of beam power, PER and slope efficiency between radially and azimuthally polarized laser outputs were not critical, and could be minimized by further optimized adjustment to laser cavity and the reflectances of respective grating mirrors. The results manifested, by use of the photonic crystal gratings mirrors and end-pumped microchip laser configuration, CVBs can be generated efficiently with high modal symmetry and polarization purity. (C) 2008 Optical Society of America.

Fluorescence properties and laser demonstrations of Nd-doped high silica glasses prepared by sintering nanoporous glass

Porous glass with high-SiO2 content was impregnated with Nd ions, and subsequently sintered at 1100 degrees C into a compact non-porous glass in air or reducing atmosphere. Sintering in a reducing atmosphere produced an intense violet-blue fluorescence at 394 nm. However, the sintering atmospheres almost did not affect the fluorescence properties in the infrared range. A good performance Nd3+-doped silica microchip laser operating at 1064 nm was demonstrated. The Nd-doped sintering glasses with high-SiO2 content are potential host materials for high power solid-state lasers and new transparent fluorescence materials. (c) 2007 Elsevier B.V. All rights reserved.

Efficient diode-pumped Yb : Gd2SiO5 laser

An efficient diode-pumped laser was demonstrated by using an ytterbium-doped laser crystal, Yb:Gd2SiO5 (Yb:GSO), wherein Yb3+ ions exhibit the largest ground-state splitting among all the ytterbium-doped crystals. The Yb:GSO laser can be operated at a low pumping threshold, and the most efficient laser occurs around 1088 nm since the corresponding emission band has the largest emission cross section and the lowest thermal population. A slope efficiency of 75% was demonstrated for a continuous-wave Yb:GSO laser at 1094 nm, and self-pulsed lasers were achieved within the tunable range of 1091-1105 nm, which are the longest laser wavelengths achieved for Yb3+ lasers. (c) 2006 American Institute of Physics.

Efficient laser oscillation of Yb : Y3Al5O12 single crystal grown by temperature gradient technique

Low-threshold and highly efficient continuous-wave laser performance of Yb:Y3Al5O12 (Yb:YAG) single crystal grown by a temperature gradient technique (TGT) was achieved at room temperature. The laser can be operated at 1030 and 1049 nm by varying the transmission of the output coupler. Slope efficiencies of 57% and 68% at 1049 and 1030 nm, respectively, were achieved for 10 at. % Yb:YAG sample in continuous-wave laser-diode pumping. The effect of pump power on the laser emission spectrum of both wavelengths is addressed. The near-diffraction-limited beam quality for different laser cavities was achieved. The excellent laser performance indicates that TGT-grown Yb:YAG crystals have very good optical quality and can be potentially used in high-power solid-state lasers.

Characterization of diode-pumped laser operation of a novel Yb : GSO crystal

We report what is believed to be the first demonstration of the laser action of Yb3+ -doped Gd2SiO5 (Yb:GSO) crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm(2), which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm(2)). The laser wavelength is 1090 mn. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5 W. By using the SESAM, the Q-switched mode locking and CW mode-locked operations are demonstrated.

Diode-pumped room-temperature continuous wave Tm3+ doped Lu2SiO5 laser

We report on room temperature laser actions of a novel thulium-doped crystal Tm center dot Lu2SiO5 (LSO) under diode pumping. An optical optical conversion efficiency of 12% and a slope efficiency of 21% were obtained with the maximum continuous wave (CW) output power of 0.67 W. The emission wavelengths of Tm LSO laser were centered at 2058.4 nm with bandwidth of similar to 13.6 nm.

Continuous-wave and passively mode-locked Yb : GYSO lasers pumped by diode lasers

We report both continuous-wave and passively mode-locked laser actions in a Yb3+-doped gadolinium yttrium oxyorthosilicate Yb:GdySiO(5) (Yb:GYSO) crystal. Continuous-wave (CW) laser operations were compared under different pump conditions with high-power diodes of different wavelengths and fiber cores. CW mode-locking was obtained with a semiconductor saturable absorber mirror.

Diode laser pumped, KERR phase-shifting and switching of a diode laser signal in a small area optical fibre

In this paper authors report the first demonstration of a diode laser powered Kerr effect device, consisting of a single birefringent fiber, able to phase-shift and switch an optical signal generated by a second laser diode. They have obtained fast, stable phase-shifting of 90° in a single fiber, at a coupled pump power of only 20 mW. Using this phase shift to induce polarization switching with resultant gating, 25% modulation of the diode laser signal has been observed, with a detection limited-rise time of 10ns.

Overall optimization of high-speed semiconductor laser modules

Based on the high frequency techniques such as frequency response measurement, equivalent circuit modeling and packaging parasitics compensation, a comprehensive optimization method for packaging high-speed semiconductor laser module is presented in this paper. The experiments show that the small-signal magnitude frequency response of the TO packaged laser module is superior to that of laser diode in frequencies, and the in-band flatness and the phase-frequency linearity are also improved significantly.