Widely tunable picosecond fiber ring laser mode-locked by a single-wall carbon nanotube (SWNT)-polycarbonate composite film saturable absorber

A widely tunable fiber ring laser, utilising a SWNT/polycarbonate film mode-locker and a 3-nm tunable filter, has been realized. 2.3ps pulse generation over 27nm spectral range is achieved for a constant pump power of 25mW. © 2007 Optical Society of America.

Widely tunable picosecond fiber ring laser mode-locked by a single-wall carbon nanotube (SWNT)-polycarbonate composite film saturable absorber

A widely tunable fiber ring laser, utilising a SWNT/polycarbonate film mode-locker and a 3-nm tunable filter, has been realized. 2.3ps pulse generation over 27nm spectral range is achieved for a constant pump power of 25mW. © 2008 Optical Society of America.

Viability and performance of demountable composite connectors

Material production, and associated carbon emissions, could be reduced by reusing products instead of landfilling or recycling them. Steel beams are well suited to reuse, but are difficult to reuse when connected compositely to concrete slabs using welded studs. A demountable connection would allow composite performance but also permit reuse of both components at end-of-life. Three composite beams, of 2 m, 10 m and 5 m length, are constructed using M20 bolts as demountable shear connectors. The beams are tested in three-, six- and four-point bending, respectively. The former two are loaded to service, unloaded, demounted and reassembled; all three are tested to failure. The results show that all three have higher strengths than predicted using Eurocode 4. The longer specimens have performance similar to previously published comparable welded-connector composite beam results. This suggests that demountable composite beams can be safely used and practically reused, thus reducing carbon emissions. © 2013 Elsevier B.V. All rights reserved.

The performance enhancement in organic light-emitting diode using a semicrystalline composite for hole injection

A semicrystalline composite, 3, 4, 9, 10 perylenetetracarboxylic dianhydride (PTCDA) doped N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine (NPB), has been fabricated and characterized. An organic light-emitting diode using such a composite in hole injection exhibits the improved performance as compared with the reference device using neat NPB in hole injection. For example, at a luminance of 2000 cd/m(2), the former device gives a current efficiency of 2.0cd/A, higher than 1.6cd/A obtained from the latter device. Furthermore, the semicrystalline composite has been shown thermally to be more stable than the neat NPB thin film, which is useful for making organic light emitting diodes with a prolonged lifetime.

Preparation of self-supporting hierarchical nanostructured anatase/rutile composite TiO2 film

Via the combination of an electrospinning method with a hydrothermal reaction, a large-scale cedar-like hierarchical nanostructured TiO2 film with an anatase/rutile composite phase was fabricated.

Passively mode-locked YVO4/Nd : YVO4 composite crystal laser with a semiconductor saturable absorber as a high reflector

A passively mode-locked diode end-pumped YVO4/Nd:YVO4 composite crystal laser with a five-mirror folded cavity was first demonstrated in this paper by using a low temperature semiconductor saturable absorber mirror grown by metal organic chemical vapor deposition. Both the Q-switching and continuous-wave mode locking operation were realized experimentally. A stable averaged output power of 10.15 W with pulse width of about 11.2-ps at a repetition rate of 113 MHz was obtained, and the optical-to-optical efficiency of 43% was achieved.

Diode-pumped passively mode-locked YVO4/Nd : YVO4 composite crystal laser with LT-In0.25Ga0.75As saturable absorber

A passively mode-locked all-solid-state YVO4/Nd:YVO4 composite crystal laser was realized with a low temperature (LT) In0.25Ga0.75As semiconductor saturable absorber mirror. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Both the Q-switch and continous-wave mode locking operation were experimentally realized. At a pump power of 4 W, the Q-switched mode locking changed to continuous wave mode locking. An average output power of 4.1 W with 5 ps pulse width was achieved at the pump power of 12 W, corresponding to an optical-optical conversion efficiency of 34.2%.

Synthesis and photoluminescence, field emission properties of stalactite-like ZnS-ZnO composite nanostructures

Wurtzite stalactite-like quasi-one-dimensional ZnS nanoarrays with ZnO protuberances were synthesized through a thermal evaporation route. The structure and morphology of the samples are studied and the growth mechanism is discussed. X-ray diffraction (XRD) results show both the ZnS stem and the ZnO protuberances have wurtzite structure and show preferred [001] oriented growth. The photoluminescence and field emission properties have also been investigated. Room temperature photoluminescence result shows it has a strong green light emission, which has potential application for green light emitter. Experimental results also show that the stalactite arrays have a good field emission property, with turn-on field of 11.4 V/mu m, and threshold field of 16 V/mu m. The ZnO protuberances on the ZnS stem might enhance the field emission notably.

Passively mode-locked YVO4/Nd:YVO4 composite crystal green laser with a semiconductor saturable absorber mirror

A diode-pumped passively mode-locked YVO4/Nd YVO4 composite crystal green laser with a semiconductor saturable absorber mirror (SESAM) and a intracavity frequency-doubling KTP crystal was realized. The maximum average output power of 2.06 W at 532 nm with a repetition rate of 100 MHz was obtained at a pump power of 15 W, corresponding to optical slop efficiency 17.2%. The 532 nm mode-locked pulse width was estimated to be approximately 18-ps.

Synthesis of composite AIN powder mixed with sintering additives by the Lanxide method

Composite AlN powder, mixed with the sintering additive Y2O3, was synthesized by the direct nitridation of molten Al-Mg-Y alloys. The character of products was determined by means of electron microscopy, X-ray diffraction, granularmetric analysis and chemical composition analysis etc. The results show that the nitridation rate of the raw alloys is higher, and the nitridation products axe porous enough to be easily crushed. Composite AlN powder, obtained by the Lanxide method, has excellent characters such as high purity, especially low oxygen content, and narrow well-distributed grain size and so on.

Q-switched and mode-locked diode-pumped Nd : YVO4 laser with an intracavity composite semiconductor saturable absorber

We have demonstrated a passively Q-switched and mode-locked Nd:YVO4 laser with an intracavity composite semiconductor saturable absorber (ICSSA). Stable Q-switched and mode-locked pulses with Q-switched envelope pulse duration of 180 ns and pulse repetition rate of 72KHz have been obtained. The maximum average output power was 1.45W at 8W incident pump power. The repetition rate of the mode-locked pulses inside the Q-switched envelope was 154 MHz. Experimental results revealed that this ICSSA was suitable for Q-switched and mode-locked solid-state lasers. (c) 2007 Elsevier Ltd. All rights reserved.

Simultaneous Q switching and mode locking with narrow envelope width in a microchip Nd : YVO4 laser with a composite semiconductor absorber

By using a composite semiconductor absorber and an output coupler, we demonstrated a Q-switched and mode-locked diode-pumped microchip Nd:YVO4 laser. With a 350-mu m-thick crystal, the width of the Q-switched envelope was as short as 12 ns; the repetition rate of the mode-locked pulses inside the Q-switched pulse was more than 10 GHz. The average output power was 335 mW at a maximum pump power of 1.6 W. Q-switched envelope widths of 21 and 31 ns were also achieved with crystals 0.7 and 1.0 mm thick, respectively.

High-repetition rate Q-switched Nd : YVO4 laser with a composite semiconductor absorber

A diode-pumped Nd:YVO4 laser passively Q switched by a semiconductor absorber is demonstrated. The Q-switched operation of the laser has an average output power of 135 mW with a 1.6 W incident pump power. The minimum pulse width is measured to be about 8.3 ns with a repetition rate of 2 MHz. To our knowledge, this is the first demonstration of a solid-state laser passively Q-switched by such a composite semiconductor absorber. (c) 2006 Optical Society of America.

Enhanced photoresponse from the ordered microstructure of naphthalocyanine-carbon nanotube composite film

Naphthalocyanine-sensitized multi-walled carbon nanotube (NaPc-MWNT) composites have been synthesized through the pi-stacking between naphthalocyanine (NaPc) and carbon nanotubes. The resultant nanocomposites were characterized with a scanning electron microscope (SEM), a transmission electron microscope (TEM), and by UV - vis absorption and photocurrent spectra. The long-range ordering was observed in the NaPc - MWNT composites by using a TEM. The enhancement in the absorption intensity and the broadening of the absorption wavelength observed in the composite films, which were due to the attachment of NaPc on the MWNT surface, is discussed based on the measured UV - vis absorption spectra. Furthermore, the photoconductivity of the poly( 3-hexylthiophene)(PAT6) - NaPc - MWNT composite film was found to increase remarkably in the visible region and broaden towards the red regions. These new phenomena were ascribed to the larger donor/acceptor (D/A) interface and the formation of a biconsecutive D/A network structure, as discussed in consideration of the photoinduced charge transfer between PAT6 and NaPc - MWNT.

In-situ synthesis of AlN powders and composite AlN powders with yttrium addition

Using Al-Mg and Al-Mg-Y alloys as raw materials and nitrogen as gas reactants, AIN powders and composite AIN powders by in-situ synthesis method were prepared. AIN lumps prepared by the nitriding of Al-Mg and Al-Mg-Y alloys have porous microstructure, which is favorable for pulverization. They have high purity, containing 1.23 % (mass fraction) oxygen impurity, and consisted of AIN single phase . The average particle size of AIN powders is 6.78 mum. Composite AlN powders consist of AlN phases and rare, earth oxide Y2O3 phase. The distribution of particle size of AIN powders shows two peaks. In view, of packing factor, AIN powders with such size distribution can easily be sintered to high density.