953 resultados para EXCITONIC ABSORPTION
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The primary excited state absorption processes relating to the (5)I(6) -> (5)I(7) 3 mu m laser transition in singly Ho(3+)-doped fluoride glass have been investigated in detail using time-resolved fluorescence spectroscopy. Selective laser excitation of the (5)I(6) and (5)I(7) energy levels established the occurrence of two excited state absorption transitions from these energy levels that compete with previously described energy transfer upconversion processes. The (5)I(7) -> (5)I(4) excited state absorption transition has peak cross sections at 1216 nm (sigma(esa)=2.8x10(-21) cm(2)), 1174 nm (sigma(esa)=1x10(-21) cm(2)), and 1134 nm (sigma(esa)=7.4x10(-22) cm(2)) which have a strong overlap with the (5)I(8) -> (5)I(6) ground state absorption. on the other hand, it was established that the excited state absorption transition (5)I(6) -> (5)S(2) had a weak overlap with ground state absorption. Using numerical solution of the rate equations, we show that Ho(3+)-doped fluoride fiber lasers employing pumping at 1100 nm rely on excited state absorption from the lowest excited state of Ho(3+) to maintain a population inversion and that energy transfer upconversion processes compete detrimentally with the excited state absorption processes in concentrated Ho(3+)-doped fluoride glass. (c) 2008 American Institute of Physics.
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Thin films were prepared using glass precursors obtained in the ternary system NaPO(3)-BaF(2)-WO(3) and the binary system NaPO(3)-WO(3) with high concentrations of WO(3) (above 40% molar). Vitreous samples have been used as a target to prepare thin films. Such films were deposited using the electron beam evaporation method onto soda-lime glass substrates. Several structural characterizations were performed by Raman spectroscopy and X-ray Absorption Near Edge Spectroscopy (XANES) at the tungsten L(I) and L(III) absorption edges. XANES investigations showed that tungsten atoms are only sixfold coordinated (octahedral WO(6)) and that these films are free of tungstate tetrahedral units (WO(4)). In addition, Raman spectroscopy allowed identifying a break in the linear phosphate chains as the amount of WO(3) increases and the formation of P-O-W bonds in the films network indicating the intermediary behavior of WO(6) octahedra in the film network. Based on XANES data, we suggested a new attribution of several Raman absorption bands which allowed identifying the presence of W-O and W=O terminal bonds and a progressive apparition of W-O-W bridging bonds for the most WO(3) concentrated samples (above 40% molar) attributed to the formation of WO(6) clusters. (C) 2008 Elsevier B.V. All rights reserved.