Identification of Cj1051c as a Major determinant for the restriction barrier of Campylobacter jejuni StrainNCTC11168

Campylobacter jejuni is a leading cause of human diarrheal illness in the world, and research on it has benefitted greatly by the completion of several genome sequences and the development of molecular biology tools. However, many hurdles remain for a full understanding of this unique bacterial pathogen. One of the most commonly used strains for genetic work with C. jejuni is NCTC11168. While this strain is readily transformable with DNA for genomic recombination, transformation with plasmids is problematic. In this study, we have identified a determinant of this to be cj1051c, predicted to encode a restriction-modification type IIG enzyme. Knockout mutagenesis of this gene resulted in a strain with a 1,000-fold-enhanced transformation efficiency with a plasmid purified from a C. jejuni host. Additionally, this mutation conferred the ability to be transformed by plasmids isolated from an Escherichia coli host. Sequence analysis suggested a high level of variability of the specificity domain between strains and that this gene may be subject to phase variation. We provide evidence that cj1051c is active in NCTC11168 and behaves as expected for a type IIG enzyme. The identification of this determinant provides a greater understanding of the molecular biology of C. jejuni as well as a tool for plasmid work with strain NCTC11168. © 2012, American Society for Microbiology.

Characterization of vertical Mo/diamond Schottky barrier diode from non-ideal I-V and C-V measurements based on MIS model

In this study, we investigated non-ideal characteristics of a diamond Schottky barrier diode with Molybdenum (Mo) Schottky metal fabricated by Microwave Plasma Chemical Vapour Deposition (MPCVD) technique. Extraction from forward bias I-V and reverse bias C- 2-V measurements yields ideality factor of 1.3, Schottky barrier height of 1.872 eV, and on-resistance of 32.63 mö·cm2. The deviation of extracted Schottky barrier height from an ideal value of 2.24 eV (considering Mo workfunction of 4.53 eV) indicates Fermi level pinning at the interface. We attributed such non-ideal behavior to the existence of thin interfacial layer and interface states between metal and diamond which forms Metal-Interfacial layer-Semiconductor (MIS) structure. Oxygen surface treatment during fabrication process might have induced them. From forward bias C-V characteristics, the minimum thickness of the interfacial layer is approximately 0.248 nm. Energy distribution profile of the interface state density is then evaluated from the forward bias I-V characteristics based on the MIS model. The interface state density is found to be uniformly distributed with values around 1013 eV - 1·cm- 2. © 2013 Elsevier B.V.

Design and optimization of planar mesa termination for diamond Schottky barrier diodes

In this paper, we present planar mesa termination structure with high k dielectric Al2O3 for high-voltage diamond Schottky barrier diode. Analysis, design, and optimization are carried out by simulations using finite element technology computer-aided design (TCAD) Sentaurus Device software. The performances of planar mesa termination structure are compared to those of conventional field plate termination structure. It is found that optimum geometry of planar mesa terminated diode requires shorter metal plate extension (1/3 of the field plate terminated diode). Consequently, planar mesa terminated diode can be designed with bigger Schottky contact to increase its current carrying capability. Breakdown performance of field plate termination structure is limited at 1480 V due to peak electric field at the corner of Schottky contact (no oxide breakdown occurs). In contrast, peak electric field in planar mesa termination structure only occurs in the field oxide such that its breakdown performance is highly dependent on the oxide material. Due to Al2O3 breakdown, planar mesa termination structure suffers premature breakdown at 1440 V. Considering no oxide breakdown occurs, planar mesa termination structure can realize higher breakdown voltage of 1751 V. Therefore, to fully realize the potential of planar mesa terminated diode, it is important to choose suitable high k dielectric material with sufficient breakdown electric field for the field oxide. © 2013 Elsevier B.V.

Is UK Planning a Barrier to Energy Efficient Heritage Retrofit: A Comparative Analysis of a Selection of London Boroughs

This paper is part of a larger PhD research project examining the apparent conflict in UK planning between energy efficiency and conservation for the retrofit of the thermal envelope of the existing building stock. Review of the literature shows that the UK will not meet its 2050 emission reduction target without substantial improvement to the energy performance of the thermal envelope of the existing building stock and that significantly, 40% of the existing stock has heritage status and may be exempted from Building Regulations. A review of UK policy and legislation shows that there are clear national priorities towards reducing emissions and addressing climate change, yet also shows a movement towards local decision making and control. This paper compares the current status of thirteen London Boroughs in respect to their position on thermal envelope retrofit for heritage and traditionally constructed buildings. Data collection is through ongoing surveys and interviews that compare statistical data, planning policies, sustainability and environmental priorities, and Officer decision-making. This paper finds that there is a lack of consistency in application of planning policy across Boroughs and suggests that this is a barrier to the up-take of energy efficient retrofit. Various recommendations are suggested at both national and local level which could help UK planning and planning officers deliver more energy efficient heritage retrofits.

Thermal shock resistance of air plasma sprayed thermal barrier coatings

The spallation resistance of an air plasma sprayed (APS) thermal barrier coating (TBC) to cool-down/reheat is evaluated for a pre-existing delamination crack. The delamination emanates from a vertical crack through the coating and resides at the interface between coating and underlying thermally grown oxide layer (TGO). The coating progressively sinters during engine operation, and this leads to a depth-dependent increase in modulus. Following high temperature exposure, the coating is subjected to a cooling/reheating cycle representative of engine shut-down and start-up. The interfacial stress intensity factors are calculated for the delamination crack over this thermal cycle and are compared with the mode-dependent fracture toughness of the interface between sintered APS and TGO. The study reveals the role played by microstructural evolution during sintering in dictating the spallation life of the thermal barrier coating, and also describes a test method for the measurement of delamination toughness of a thin coating. © 2014 Elsevier Ltd.

Electron tunneling through a planar single barrier in HgTe quantum wells with inverted band structures

We present a theoretical study on the electron tunneling through a single barrier created in a two-dimensional electron gas (2DEG) and quantum spin Hall (QSH) bar in a HgTe/CdTe quantum well with inverted band structures. For the 2DEG, the transmission shows the Fabry-Perot resonances for the interband tunneling process and is blocked when the incident energy lies in the bulk gap of the barrier region. For the QSH bar, the transmission gap is reduced to the edge gap caused by the finite size effect. Instead, transmission dips appear due to the interference between the edge states and the bound states originated from the bulk states. Such a Fano-like resonance leads to a sharp dip in the transmission which can be observed experimentally.

Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors

The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.

Electric tunable of electron spin polarization in hybrid magnetic-electric barrier structures

Electron spin-dependent transport properties have been theoretically investigated in two-dimensional electron gas (2DEG) modulated by the magnetic field generated by a pair of anti-parallel magnetization ferromagnetic metal stripes and the electrostatic potential provided by a normal metal Schottky stripe. It is shown that the energy positions of the spin-polarization extremes and the width of relative spin conductance excess plateau could be significantly manipulated by the electrostatic potential strength and width, as well as its position relative to the FM stripes. These interesting features are believed useful for designing the electric voltage controlled spin filters. (C) 2008 Elsevier B.V. All rights reserved.

Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.

Spin dynamics in the second subband of a quasi-two-dimensional system studied in a single-barrier heterostructure by time-resolved Kerr rotation

Spin dynamics in the first and second subbands have been examined simultaneously by time resolved Kerr rotation in a single-barrier heterostructure of a 500 nm thick GaAs absorption layer. By scanning the wavelengths of the probe and pump beams towards the short wavelength in the zero magnetic field, the spin coherent time T-2(1)* in the 1st subband E-1 decreases in accordance with the D'yakonov-Perel' (DP) spin decoherence mechanism. Meanwhile, the spin coherence time T-2(2)* in the 2nd subband E-2 remains very low at wavelengths longer than 810 nm, and then is dramatically enhanced afterwards. At 803 nm, T-2(2)* (450 ps) becomes ten times longer than T-2(1)* (50 ps). A new feature has been discovered at the wavelength of 811nm under the bias of -0.3V (807nm under the bias of -0.6V) that the spin coherence times (T-2(1)* and T-2(2)*) and the effective g* factors (vertical bar g*(E-1)vertical bar and vertical bar g*(E-2)vertical bar) all display a sudden change, presumably due to the "resonant" spin exchange coupling between two spin opposite bands. Copyright (C) EPLA, 2008.

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector

A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector is proposed. In comparision with conventional i-CaN/n(+)-GaN structure, an additional thin p-GaN cap layer is introduced on the i-GaN(n(-)-GaN) in the new structure. The simulation results showed that the additional layer makes the dark current to decrease in the photodetector due to the increase of the Schottky barrier height. The effects of thickness and carrier concentration of p-GaN layer on the dark current of the photodetector were also studied. It is suggested that the dark current of the new structure device could be better reduced by employing p-GaN with higher carrier concentration as the cap layer.