Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires

Temperature-dependent polarized microphotoluminescence measurements of single GaAsAlGaAs core-shell nanowires are used to probe their electronic states. The low-temperature emission from these wires is strongly enhanced compared with that observed in bare GaAs nanowires and is strongly polarized, reflecting the dielectric mismatch between the nanowire and the surrounding air. The temperature-dependent band gap of the nanowires is seen to be somewhat different from that observed in bulk GaAs, and the PL rapidly quenches above 120 K, with an activation energy of 17 meV reflecting the presence of nonradiative defects. © 2006 American Institute of Physics.

Effects of temperature and light on the growth and geosmin production of Lyngbya kuetzingii (Cyanophyta)

The effects of temperature and light on the growth and geosmin production of Lyngbya kuetzingii were determined. Of the three temperatures tested, 10, 25 and 35A degrees C, the maximal geosmin concentration and geosmin productivity were yielded at 10A degrees C, while the highest chl a production was observed at 25A degrees C. In the studies on light intensity, the maximal geosmin concentration and geosmin productivity were observed at 10 mu mol m(-2) s(-1), while the highest chl a production was at 20 mu mol m(-2) s(-1). It was suggested that more geosmin was synthesized with lower chl a demand. Meanwhile, the relative amounts of extra- and intracellular geosmin were investigated. Under optimum growth conditions (20 mu mol m(-2) s(-1), 25A degrees C; BG-11 medium), the amounts of extracellular geosmin increased as the growth progressed and reached the maximum in the stationary phase, while the intracellular geosmin reached its maximum value in the late exponential phase, and then began to decline. However, under the low temperature (10A degrees C) or light (10 mu mol m(-2) s(-1)) conditions, more intracellular geosmin was synthesized and mainly accumulated in the cells. The proportions of extracellular geosmin were high, to 33.33 and 32.27%, respectively, during the stationary phase at 35A degrees C and 20 mu mol m(-2) s(-1). It was indicated that low temperature or light could stimulate geosmin production and favor the accumulation of geosmin in cells, while more intracellular geosmin may be released into the medium at higher temperatures or optimum light intensity.

Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

Fiber Bragg grating pressure sensor with ultrahigh sensitivity and reduced temperature sensitivity

A fiber Bragg grating (FBG) pressure sensing scheme based on a flat diaphragm and an L-shaped lever is presented. An L-shaped lever transfers the pressure-induced defection of the flat diaphragm to the axial elongation of the FBG. The curve where the L-shaped lever contacts the diaphragm is a segment of an Archimedes spiral, which is used to enhance the responsivity. Because the thermal expansion coefficient of the quartz-glass L-shaped lever and the steel sensor shell is different, the temperature effect is compensated for by optimizing the dimension parameters. Theoretical analysis is presented, and the experimental results show that an ultrahigh pressure responsivity of 244 pm/kPa and a low temperature responsivity of 2.8 pm/degrees C are achieved. (c) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI 10.1117/1.3081058]

Polarized photoluminescence and temperature-dependent - Photoluminescence study of InAs quantum wires on InP(001)

InAs quantum wires (QWRs) have been fabricated on the InP(001), which has been evidenced by TEM and polarized photoluminescence measurements (PPL). The monlayer-splitting peaks (MSPs) in the PL spectrum of InAs QWRs can be clearly observed at low temperature measurements. Supposing a peak-shift of MSP identical to that of bulk material, we obtain the thermal activation energies of up to 5 MSPs. The smaller thermal activation energies for the MSPs of higher energy lead to the fast red-shift of PL peak as a whole.

A convenient way of determining the ferromagnetic transition temperature of metallic (Ga,Mn)As

We have studied magnetic and transport properties of insulating and metallic (Ga,Mn)As layers before and after annealing. A dramatic increase of the ferromagnetic transition temperature T-C by postgrowth annealing has been realized in both insulating and metallic (Ga,Mn)As. The as-grown insulating (Ga,Mn)As can be turned into metallic by the low-temperature annealing. For all the metallic (Ga,Mn)As, a characteristic feature in the temperature dependence of sheet resistance appears around T-C. This phenomenon may provide a simple and more convenient method to determine the T-C of metallic (Ga,Mn)As compared with superconducting quantum interference device (SQUID) measurement. Moreover, the T-C of the metallic (Ga,Mn)As obtained by this way is in good agreement with that measured by a SQUID magnetometer. (C) 2005 American Institute of Physics.

Demonstration of low-cost Si-based tunable long-wavelength resonant-cavity-enhanced photodetectors

A simple process for fabricating low-cost Si-based continuously tunable long-wavelength resonant-cavity-enhanced (RCE) photodetectors has been investigated. High-contrast SiO2/Si(Deltan similar to2) was employed as mirrors to eliminate the need to grow thick epitaxial distributed Bragg reflectors. Such high-reflectivity SiO2/Si mirrors were deposited on the as-grown InGaAs epitaxy layers, and then were bonded to silicon substrates at a low temperature of 350 C without any special treatment on bonding surfaces, employing silicate gel as the bonding medium. The cost is thus decreased. A thermally tunable Si-based InGaAs RCE photodetector operating at 1.3-1.6 mum was obtained, with a quantum efficiency of about 44% at the resonant wavelength of 1476 nm and a tuning range of 14.5 nm. It demonstrates a great potential for industry processes. (C) 2005 American Institute of Physics.

Cr-doped InAs self-organized diluted magnetic quantum dots with room-temperature ferromagnetism

Cr-doped InAs self-organized diluted magnetic quantum dots (QDs) are grown by low-temperature molecular-beam epitaxy, Magnetic measurements reveal that the Curie temperature of all the InAs:Cr QDs layers with Cr/In flux ratio changing from 0.026 to 0.18 is beyond 400 K. High-resolution cross sectional transmission electron microscopy images indicate that InAs:Cr QDs are of the zincblende structure. Possible origins responsible for the high Curie temperature are discussed.

Temperature and pressure dependences of the copper-related green emission in ZnO microrods

We have investigated the temperature and pressure dependences of the copper-related green emission, which show fine structure at low temperature, from tetrapodlike ZnO microrods. The temperature dependence of the green emission energy follows the changes in the band gap from 10-200 K, but deviates from this behavior above 200 K. The pressure dependence of the copper-related green band (25 +/- 5 meV/GPa) is similar to that of the band gap of ZnO, and is larger than that reported previously for defect-related green emission in ZnO. (c) 2006 American Institute of Physics.

Temperature dependence of the formation of nano-scale indium clusters in InAlGaN alloys on Si(111) substrates

The temperature dependence of the formation of nano-scale indium clusters in InAlGaN quaternary alloys, which are grown by metalorganic chemical vapour deposition on GaN/Si(111) epilayers, is investigated. Firm evidence is provided to support the existence of phase separation, or nano-scale In-rich clusters, by the combined results of high-resolution transmission electron microscopy (HRTEM), high-resolution x-ray diffraction (HRXRD) and micro-Raman spectra. The results of HRXRD and Raman spectra indicate that the degree of phase separation is strong and the number of In clusters in the InAlGaN layers on silicon substrate is higher at lower growth temperatures than that at higher growth temperatures, which limits the In and Al incorporated into the InAlGaN quaternary alloys. The detailed mechanism of luminescence in this system is studied by low temperature photoluminescence (LT-PL). We conclude that the ultraviolet (UV) emission observed in the quaternary InAlGaN alloys arises from the matrix of a random alloy, and the second emission peak in the blue-green region results from the nano-scale indium clusters.

Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500 degreesC and an intermediate-temperature buffer layer (ITBL) deposited at 690 degreesC. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

ECR plasma in growth of cubic GaN by low pressure MOCVD

To heteroepitaxally grow the crystalline cubic-GaN (c-GaN) film on the substrates with large lattice mismatch is basically important for fabricating the blue or ultraviolet laser diodes based on cubic group III nitride materials. We have obtained the crystalline c-GaN film and the heteroepitaxial interface between c-Gan and GaAs (001) substrate by the ECR Plasma-Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) under low-pressure and low-temperature (similar to600degreesC) on a homemade ECR-plasma Semiconductor Processing Device (ESPD). In order to decrease the growth temperature, the ECR plasma source was adopted as the activated nitrogen source, therefore the working pressure of MOCVD was decreased down to the region less than 1 Pa. To eliminate the damages from energetic ions of current plasma source, a Multi-cusp cavity,coupling ECR Plasma source (MEP) was selected to use in our experiment. To decrease the strain and dislocations induced from the large lattice mismatch between c-GaN and GaAs substrate, the plasma pretreatment procedure i.e., the initial growth technique was investigated The experiment arrangements, the characteristics of plasma and the growth procedure, the characteristics on-GaN film and interface between c-GaN and GaAs(001), and the roles of ECR plasma are described in this contribution.

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

A detailed characterisation study of GaN thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (ITBL) was carried out with Hall, photoluminescence (PL) and deep-level transient Fourier spectroscopy (DLTFS) techniques. The unique feature of our GaN thin films is that the GaN epitaxial layers are grown on top of a double layer that consists of an ITBL, which is grown at 690 degreesC, and a conventional low-temperature buffer layer deposited at 500 degreesC. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377 cm(2)V(-1)S(-1) for an ITBL thickness of 800 nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. The DLTFS results suggest a three-order-of-magnitude reduction in the deep level at E-c-0.40 eV in the device fabricated with the GaN films grown on an ITBL thickness of 1.25 mum in comparison with the control device without an ITBL. Our analyses indicate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films. (C) 2002 Elsevier Science BN. All rights reserved.

Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers

We report on a detailed investigation on the temperature-dependent behavior of photoluminescence from molecular beam epitaxy (MBE)-grown chlorine-doped ZnSe epilayers. The overwhelming neutral donor bound exciton ((ClX)-X-0) emission at 2.797 eV near the band edge with a full-width at half-maximum (FWHM) of similar to 13 meV reveals the high crystalline quality of the samples used. In our experiments, the quick quenching of the (ClX)-X-0 line above 200 K is mainly due to the presence of a nonradiative center with a thermal activation energy of similar to 90 meV, The same activation energy and similar quenching tendency of the (ClX)-X-0 line and the I-3 line at 2.713 eV indicate that they originate from the same physical mechanism. We demonstrate for the first time that the dominant decrease of the integrated intensity of the I, line is due to the thermal excitation of the "I-3 center"-bound excitons to its free exciton states, leaving the "I-3 centers" as efficient nonradiative centers. The optical performance of ZnSe materials is expected to be greatly improved if the density of the "I-3 center" can be controlled. The decrease in the luminescence intensity at moderately low temperature (30-200 K) of the (ClX)-X-0 line is due to the thermal activation of neutral-donor-bound excitons ((ClX)-X-0) to free excitons. (C) 2000 Published by Elsevier Science B.V.

Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots

Strong temperature dependence of optical properties has been studied in visible InAlAs/AlGaAs quantum dots, by employing photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. The fast redshift of the exciton emission peak was observed at much lower temperature range compared to that observed in the InAs/GaAs QDs. In TRPL we did not observe the constant decay time even at low temperature. Instead, the observed decay time increases quickly with increasing temperature, showing 2D properties in the transient dynamic process. We attributed our results to the strong lateral coupling effect, which results in the formation of the local minibands or extended states from the discrete energy levels. (C) 2000 Elsevier Science B.V. All rights reserved.