902 resultados para computer science and engineering


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Fun and exciting textbook on the mathematics underpinning the most dynamic areas of modern science and engineering.

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This book will be of particular interest to academics, researchers, and graduate students at universities and industrial practitioners seeking to apply mobile and pervasive computing systems to improve construction industry productivity.

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Modelling is fundamental to many fields of science and engineering. A model can be thought of as a representation of possible data one could predict from a system. The probabilistic approach to modelling uses probability theory to express all aspects of uncertainty in the model. The probabilistic approach is synonymous with Bayesian modelling, which simply uses the rules of probability theory in order to make predictions, compare alternative models, and learn model parameters and structure from data. This simple and elegant framework is most powerful when coupled with flexible probabilistic models. Flexibility is achieved through the use of Bayesian non-parametrics. This article provides an overview of probabilistic modelling and an accessible survey of some of the main tools in Bayesian non-parametrics. The survey covers the use of Bayesian non-parametrics for modelling unknown functions, density estimation, clustering, time-series modelling, and representing sparsity, hierarchies, and covariance structure. More specifically, it gives brief non-technical overviews of Gaussian processes, Dirichlet processes, infinite hidden Markov models, Indian buffet processes, Kingman's coalescent, Dirichlet diffusion trees and Wishart processes.

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We have studied the structure and the room temperature luminescence of erbium silicate thin films deposited by rf magnetron sputtering. Films deposited on silicon oxide layers are characterized by good structural properties and excellent stability. The optical properties of these films are strongly improved by rapid thermal annealing processes performed in the range of temperature 800-1250 °C. In fact through the reduction of the defect density of the material, a very efficient room temperature photoluminescence at 1535 nm is obtained. We have also investigated the influence of the annealing ambient, by finding that treatments in O2 atmosphere are significantly more efficient in improving the optical properties of the material with respect to processes in N2. Upconversion effects become effective only when erbium silicate is excited with high pump powers. The evidence that all Er atoms (about 1022 cm-3) in erbium silicate films are optically active suggests interesting perspectives for optoelectronic applications of this material. © 2007 Elsevier B.V. All rights reserved.

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Two adaptive numerical modelling techniques have been applied to prediction of fatigue thresholds in Ni-base superalloys. A Bayesian neural network and a neurofuzzy network have been compared, both of which have the ability to automatically adjust the network's complexity to the current dataset. In both cases, despite inevitable data restrictions, threshold values have been modelled with some degree of success. However, it is argued in this paper that the neurofuzzy modelling approach offers real benefits over the use of a classical neural network as the mathematical complexity of the relationships can be restricted to allow for the paucity of data, and the linguistic fuzzy rules produced allow assessment of the model without extensive interrogation and examination using a hypothetical dataset. The additive neurofuzzy network structure means that redundant inputs can be excluded from the model and simple sub-networks produced which represent global output trends. Both of these aspects are important for final verification and validation of the information extracted from the numerical data. In some situations neurofuzzy networks may require less data to produce a stable solution, and may be easier to verify in the light of existing physical understanding because of the production of transparent linguistic rules. © 1999 Elsevier Science S.A.

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The growing interest in innovative reactors and advanced fuel cycle designs requires more accurate prediction of various transuranic actinide concentrations during irradiation or following discharge because of their effect on reactivity or spent-fuel emissions, such as gamma and neutron activity and decay heat. In this respect, many of the important actinides originate from the 241Am(n,γ) reaction, which leads to either the ground or the metastable state of 242Am. The branching ratio for this reaction depends on the incident neutron energy and has very large uncertainty in the current evaluated nuclear data files. This study examines the effect of accounting for the energy dependence of the 241Am(n,γ) reaction branching ratio calculated from different evaluated data files for different reactor and fuel types on the reactivity and concentrations of some important actinides. The results of the study confirm that the uncertainty in knowing the 241Am(n,γ) reaction branching ratio has a negligible effect on the characteristics of conventional light water reactor fuel. However, in advanced reactors with large loadings of actinides in general, and 241Am in particular, the branching ratio data calculated from the different data files may lead to significant differences in the prediction of the fuel criticality and isotopic composition. Moreover, it was found that neutron energy spectrum weighting of the branching ratio in each analyzed case is particularly important and may result in up to a factor of 2 difference in the branching ratio value. Currently, most of the neutronic codes have a single branching ratio value in their data libraries, which is sometimes difficult or impossible to update in accordance with the neutron spectrum shape for the analyzed system.

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The temperature dependence of the stress-induced martensite (SIM) formation in a Ti-10V-2Fe-3Al (Ti-1023) alloy under compressive loading has been studied. At low temperatures, the stress level at which martensite starts to form increases linearly with the deformation temperature, while the stress at which the deformation switches to regular plastic deformation is roughly temperature independent. A thermostatistical model for dislocation evolution is employed to describe deformation twinning in martensite. Combined effects of twinning induced plasticity and solid solution strengthening are considered in terms of temperature variations. The SIM effect disappears on deformation at temperatures beyond ~ 233 ° C, which is close to the predicted Ms temperature of 240°C. The thermostatistical model predicts a transition from twinned martensite to pure slip at 250°C. By providing a model to predict the martensite formation, and by describing deformation twinning, the present work provides a number of tools that may be employed to conceive new titanium alloys combining improved strength and ductility. © 2013 Elsevier B.V.

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The optical, structural and electrical properties of poly(3,4- ethylenedioxythiophene):poly(4-styrenesulfonic acid) (PEDOT:PSS) thin films printed by roll-to-roll gravure have been investigated. Corona treatment has been applied to enhance the adhesion of PEDOT:PSS on PolyEthylene Terephthalate (PET) web. It has been found that there was a stronger in-depth surface modification of PET with the increase of corona efficiency; however, the adhesion of PEDOT:PSS was not actually affected. Also, Spectroscopic Ellipsometry and Atomic Force Microscopy have been used to extract information on the mechanisms that define PEDOT:PSS properties. The increase of the drying temperature of the PEDOT:PSS films has been found to reduce the remaining water inside the films and lead to the decrease of the PEDOT:PSS particles size. © 2011 Elsevier B.V. All rights reserved.

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Dilute magnetic nonpolar GaN films with a Curie temperature above room temperature have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films and a subsequent rapid thermal annealing (RTA) process. The impact of the implantation and RTA on the structure and morphology of the nonpolar GaN films is studied in this paper. The scanning electron microscopy analysis shows that the RTA process can effectively recover the implantation-indUced damage to the surface morphology of the sample. The X-ray diffraction and micro-Raman scattering spectroscopy analyses show that the RTA process can just partially recover the implantation-induced crystal deterioration. Therefore, the quality of the Mn-implanted nonpolar GaN films should be improved further for the application in spintronic devices. (C) 2009 Elsevier B.V. All rights reserved.

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Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. X-ray diffraction measurements revealed no secondary phase in the samples. Experiments using superconducting quantum interference device (SQUID) showed that the samples were ferromagnetic at 5 and 300 K, implying the Curie temperature to be around or over 300 K, despite their n-type conductivity. (c) 2004 Elsevier B.V. All rights reserved.

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Photoluminescence (PL) was investigated in undoped GaN from 4.8 K to room temperature. The 4.8 K spectra exhibited recombinations of free exciton, donor-acceptor pair (DAP), blue and yellow bands (Ybs). The blue band (BB) was also identified to be a DAP recombination. The YB was assigned to a recombination from deep levels. The energy-dispersive X-ray spectroscopy show that C and O are the main residual impurities in undoped GaN and that C concentration is lower in the epilayers with the stronger BB. The electronic structures of native defects, C and O impurities, and their complexes were calculated using ab initio local-density-functional (LDF) methods with linear muffin-tin-orbital and 72-atomic supercell. The theoretical analyses suggest that the electron transitions from O-N states to C-N and to V-Ga states are responsible for DAP and the BB, respectively, and the electron transitions between the inner levels of the C-N-O-N complex may be responsible for the YB in our samples. (C) 2002 Elsevier Science B.V. All rights reserved.