Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice

An anomalous behavior of the current self-oscillation frequency is observed in the dynamic de voltage bands, emerging from each sawtoothlike branch of the current-voltage characteristic of a doped GaAs/A1As superlattice in the transition process from static to dynamic electric field domain formations. Varying the applied de voltage at a fixed temperature, we find that the frequency increases while the averaged current decreases. Inside each voltage band, the frequency has a strong voltage dependence in the temperature range where the averaged current changes with the applied de voltage. This dependence can be understood in terms of motion of the system along a limit cycle.

Widely Frequency-Tunable Optical Microwave Source Based on Amplified Feedback Laser

A monolithic integrated amplified feedback semiconductor laser is demonstrated as an optical microwave source. The optical microwave frequency is continuously tunable in the range of 19.87-26.3 GHz with extinction ratio above 6 dB, 3-dB linewidth about 3MHz.

A 5.6-mW Power Dissipation CMOS Frequency Synthesizer for L1/L2 Dual-Band GPS Application

This paper presents a wide tuning range CMOS frequency synthesizer for dual-band GPS receiver, which has been fabricated in a standard 0.18-um RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45GHz and 3.14GHz in case of process corner or temperature variation, with a current consumption varying accordingly from 0.8mA to 0.4mA, from a 1.8V supply voltage. The measurement results show that the whole frequency synthesizer costs a very low power consumption of 5.6mW working at L I band with in-band phase noise less than -82dBc/Hz and out-of-band phase noise about -112 dBc/Hz at 1MHz offset from a 3.142GHz carrier.

A Compact Direct Digital Frequency Synthesizer for System-on-chip

A compact direct digital frequency synthesizer (DDFS) for system-on-chip (SoC) is developed in this paper. For smaller chip size and lower power consumption, the phase to sine mapping data is compressed by using sine symmetry technique, sine-phase difference technique, quad line approximation (QLA) technique and quantization and error read only memory (QE-ROM) technique. The ROM size is reduced by 98 % using the techniques mentioned above. A compact DDFS chip with 32-bit phase storage depth and a 10-bit on-chip digital to analog converter(DAC) has been successfully implemented using standard 0.35um CMOS process. The core area of the DDFS is 1.6mm(2). It consumes 167 mW at 3.3V, and its spurious free dynamic range (SFDR) is 61dB.

A new frequency offset estimation for OFDM-based systems

A new carrier frequency offset estimation scheme in orthogonal frequency division multiplexing (OFDM) is proposed. The scheme includes coarse frequency offset estimation and fine frequency offset estimation. The coarse frequency offset estimation method we present is a improvement of Zhang's method. The estimation range of the new method is as large as the overall signal-band width. A new fine frequency offset estimation algorithm is also discussed in this paper. The new algorithm has a better performance than the Schmidl's algorithm. The system we use to calculate and simulate is based on the high rate WLAN standard adopted by the IEEE 802.11 stanidardization group. Numerical results are presented to demonstrate the performance of the proposed algorithm.

A direct digital frequency synthesizer with single-stage delta-sigma interpolator and current-steering DAC

This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a 4th-order single-stage pipelined delta-sigma interpolator and a 300MS/s 12-bit current-steering DAC based on Q(2) Random Walk switching scheme. The delta-sigma interpolator is used to reduce the phase truncation error and the ROM size. The measured spurious-free dynamic range (SFDR) is greater than 80 dB for 8-bit phase value and 12-bit sine-amplitude output. The DDFS prototype is fabricated in a 0.35um CMOS technology with core area of 1.11mm(2).

A new frequency offset estimation for OFDM-Based systems

A-new-carrier-frequency offset estimation scheme in orthogonal frequency division multiplexing (OFDM) is proposed. The scheme includes coarse frequency offset estimation and fine frequency offset estimation. The coarse frequency offset estimation method we present is a improvement of Zhang's method. The estimation range of the new method is as large as the overall signal-band width. A new fine frequency offset estimation algorithm is also discussed in this paper. The new algorithm has a better performance than the Schmidt's algorithm. The system we use to calculate and simulate is based on the high rate WLAN standard adopted by the IEEE 802.11 standardization group. Numerical results are presented to demonstrate the performance of the proposed algorithm.

A direct digital frequency synthesizer with fourth-order phase domain Delta Sigma noise shaper and 12-bit current-steering DAC

This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a fourth-order phase domain single-stage Delta Sigma interpolator, and a 300-MS/s 12-bit current-steering DAC based on the Q(2) Random Walk switching scheme. The Delta Sigma interpolator is used to reduce the phase truncation error and the ROM size. The implemented fourth-order single-stage Delta Sigma noise shaper reduces the effective phase bits by four and reduces the ROM size by 16 times. The DDFS prototype is fabricated in a 0.35-mu m CMOS technology with active area of 1.11 mm(2) including a 12-bit DAC. The measured DDFS spurious-free dynamic range (SFDR) is greater than 78 dB using a reduced ROM with 8-bit phase, 12-bit amplitude resolution and a size of 0.09 mm(2). The total power consumption of the DDFS is 200)mW with a 3.3-V power supply.

A Novel 0.72-6.2GHz Continuously-Tunable Delta Sigma Fractional-N Frequency Synthesizer

This paper presents a wideband Delta Sigma-based fractional-N synthesizer with three integrated quadrature VCOs for multiple-input multiple-output (MIMO) wireless communication applications. It continuously covers a wide range frequency from 0.72GHz to 6.2GHz that is suitable for multiple communication standards. The synthesizer is designed in 0.13-um RE CMOS process. The dual clock full differential multi-modulus divide (MMD) with low power consumption can operate over 9GHz under the worst condition. In the whole range frequency from 0.72GHz to 6.2GHz, the maximal tuning range of the QVCOs reaches 33.09% and their phase noise is -119d8/Hz similar to 124d8/Hz @1MHz. Its current is less than 12mA at a 1.2V voltage supply when it operates at the highest frequency of 6.2GHz.

40-GHz wavelength tunable mode-locked SOA-based fiber laser with 40-nm tuning range

A 40-GHz wavelength tunable mode-locked fiber ring laser based oil cross-gain modulation in a semiconductor optical amplifier (SOA) is presented. Pulse trains with a pulse width of 10.5 ps at 40-GHz repetition frequency are obtained. The laser operates with almost 40-nm tuning range. The relationship between the key laser parameters and the output pulse characteristics is analyzed experimentally.

A Low Power Dissipation Wide-Band CMOS Frequency Synthesizer for a Dual-Band GPS Receiver

This paper presents a wide tuning range CMOS frequency synthesizer for a dual-band GPS receiver,which has been fabricated in a standard 0.18μm RF CMOS process. With a high Q on-chip inductor, the wide-band VCO shows a tuning range from 2 to 3.6GHz to cover 2.45 and 3.14GHz in case of process corner or temperature variation,with a current consumption varying accordingly from 0.8 to 0.4mA,from a 1.8V supply voltage. Measurement results show that the whole frequency synthesizer consumes very low power of 5.6mW working at L1 band with in-band phase noise less than - 82dBc/Hz and out-of-band phase noise about - ll2dBc/Hz at 1MHz offset from a 3. 142GHz carrier. The performance of the frequency synthesizer meets the requirements of GPS applications very well.

A Compact Direct Digital Frequency Synthesizer for the Rubidium Atomic Frequency Standard

A compact direct digital frequency synthesizer （DDFS） for system-on-chip implementation of the high precision rubidium atomic frequency standard is developed. For small chip size and low power consumption, the phase to sine mapping data is compressed using sine symmetry technique, sine-phase difference technique, quad line approximation technique,and quantization and error read only memory （QE-ROM） technique. The ROM size is reduced by 98% using these techniques. A compact DDFS chip with 32bit phase storage depth and a 10bit on-chip digital to analog converter has been successfully implemented using a standard 0.35μm CMOS process. The core area of the DDFS is 1.6mm^2. It consumes 167mW at 3.3V,and its spurious free dynamic range is 61dB.

三种豆科灌木对干旱胁迫的响应与适应

干旱胁迫是全球范围内影响植物生存、生长和分布的重要环境因子。岷江上游干旱河谷区，由于生态环境的脆弱性和长期人类活动的干扰和过度利用，导致植被严重退化，水土流失加剧，山地灾害频繁，干旱化和荒漠化趋势明显。这种趋势若不能遏制，将严重阻碍区域社会经济的快速协调发展，并且威胁成都平原地区的发展和长江中下游地区的生态安全。因而开展干旱河谷生态恢复研究成为解决这些问题的关键。水分匮乏是限制干旱河谷生态恢复的关键因子，在全球气候变化的背景下，干旱胁迫在区域尺度上可能会更加严重，并使干旱河谷的生态环境更加恶化。因此，深入研究干旱河谷乡土植物对干旱胁迫的响应和适应机理，具有非常重要的理论和实践意义。 本论文以岷江上游干旱河谷的三种乡土豆科灌木，白刺花（Sophora davidii）、小马鞍羊蹄甲（Bauhinia faberi var. microphylla）和小雀花（Campylotropics polyantha）理论和实践意义。为研究对象，在人工控制条件下设计了4-5个连续性干旱胁迫处理，系统地研究了灌木幼苗的生长、生物量积累和水分利用效率（WUE）、形态结构和生理过程等对干旱胁迫的反应，揭示了幼苗的干旱适应能力及种间差异。主要研究结论如下： 1) 灌木生长和繁殖对干旱胁迫的反应 在干旱胁迫下，幼苗生长速率显著减小，叶片衰老和脱落比率增大，这些变化随着胁迫强度的增加具有累积效应。叶片比茎对干旱胁迫的反应更敏感。在严重干旱胁迫下，幼苗的有性繁殖被限制，但在中等程度干旱胁迫下，幼苗的有性繁殖能力被提高。 2) 灌木生物量积累及其分配和WUE对干旱胁迫的反应 在干旱胁迫下，灌木各器官的生物量都显著减小，但是生物量的分配侧重于地下部分，使得根茎比在干旱条件下增大。幼苗的耗水量（WU）随着干旱胁迫的增加而显著减少。白刺花和小马鞍羊蹄甲WUE在干旱胁迫下降低；小雀花的WUE在中等干旱胁迫下升高。 3) 灌木叶片结构特征对干旱胁迫反应 白刺花叶片具有较为典型的旱生型结构，而小马鞍羊蹄甲和小雀花则为中生型结构。在1至2年的干旱胁迫下，灌木叶片结构组成未发生本质性的改变，主要是细胞大小的变化。在中等和严重干旱胁迫下，叶肉组织厚度明显减小；并且气孔和表皮细胞面积也显著减小，气孔和表皮细胞密度显著增大；叶肉细胞层数、P/S值、表皮厚度等无显著变化。 4) 灌木对干旱胁迫的生理响应 气体交换参数和叶片相对含水量（RWC）在中等干旱胁迫下发生了明显的改变，而叶绿素荧光参数和光合色素含量在严重干旱胁迫下才发生显著变化。在干旱胁迫下，净光合作用速率（Pn）、气孔导度（gs）和RWC呈下降趋势，而叶片温度（Tl）呈增加趋势，蒸腾速率（Tr）的变化不明显。除了日最大Pn减小以外，干旱胁迫对气体交换参数的日变化无显著影响，但是对光合-光响应曲线有显著的影响，使有效光合时间缩短。在严重干旱胁迫下光系统受到损害而代谢减弱，PSⅡ中心的内禀光能转换效率（Fv/Fm）、量子产量（Yield）、光化学淬灭参数（qP）显著降低，而非光化学淬灭参数（NPQ）明显增加。气孔限制和非气孔限制对Pn的影响与干旱胁迫强度有关。在中度胁迫下，气孔限制起主导作用，在严重胁迫下非气孔限制起主导作用，40% FC水分条件可能是灌木由气孔限制向非气孔限制的转折点。 5) 灌木对干旱胁迫的适应能力及其种间差异 三种灌木对干旱胁迫具有较好的适应能力，即使在20% FC，幼苗未因干旱胁迫III而死亡；80% FC适宜于幼苗生长。白刺花生长速率慢，耗水量较少，具有较强的耐旱和耐贫瘠能力，并具有干旱忍受机制，能够在较干旱的环境中定居和生长。小马鞍羊蹄甲和小雀花，生长快，水分消耗量较大，尤其是小雀花，对干旱胁迫的忍受能力较弱，具有干旱回避机制，因而适宜于在较为湿润的生境中生长。综合分析表明，生长速率较慢的物种抗旱能力较强，其更适宜于作为干旱地区植被恢复物种。 Drought is often a key factor limiting plant establishment, growth and distribution inmany regions of the world. The harsh environmental conditions and long-termanthropogenic disturbance had resulted in habitat destruction in the dry valley ofMinjiang river, southwest China. Recently, it tended to be more severe on the vegetationdegradation, soil erosion and water loss, natural disaster, as well as desertification, whichimpact on regional booming economy and harmonious development, and would be verydangerous to the environmental security in the middle and lower reaches of Yangzi River.Therefore, ecological restoration in the dry valley is one of the vital tasks in China. Waterdeficit is known to affect adversely vegetation restoration in this place. Moreover, in thecontext of climate change, an increased frequency of drought stress might occur at aregional scale in the dry valleys of Minjiang River. The selection of appropriate plantingspecies for vegetation restoration in regard to regional conditions is an important issue atpresent and in further. The research on responses of indigenous species to drought stresscould provide insights into the improvement of the vegetation restoration in the dry valleys of Minjiang River. In this paper, the responses of three indigenous leguminous shrubs, Sophora davidii,Bauhinia faberi var. microphylla and Campylotropics polyantha, to various soil watersupplies were studied in order to assess drought tolerance of seedlings, and to compare interspecific differences in seedlings’ responses to drought stress. The results were as follows: 1 Growth and reproduction of shrubs in response to drought stress Seedling growth reduced significantly while leaf senescence accelerated underdrought stress, the cumulative responses to prolonged drought were found. The capacityfor reproduction was limited by severe drought stress, and improved by moderate droughtstress. Leaf responses were more sensitive than shoot to various water supplies. 2 WUE, biomass production and its partitioning of shrubs in response to drought stress Drought stress reduced significantly the total dry mass and their components ofseedlings, and altered more biomass allocation to root system, showing higher R/S ratiounder drought. Water use (WU) and water-use efficiency (WUE) of both S. davidii and B.faberi var. microphylla declined strongly with drought stress. The WU C. polyantha ofalso declined with drought stress, but WUE improved under moderate drought stress. 3 Anatomical characteristics and ultrastructures of leaves in response to drought stress There were xeromorphic for S. davidii leaves and mesomorphic for B. faberi var.microphylla and C. polyantha at the all water supplies. The foundational changes in leafstructures were not found with drought stress. However, mesophyll thickness, the areas ofstomatal and epidermis reduced slightly while the densities of stomatal and epidermisincreased under severe drought stress. Variations in these parameters could mainly be duoto cell size. Other structures did not displayed significant changes with drought stress. 4 Physiological responses of shrubs to drought stress The gas exchange parameters and leaf relative water content (RWC) were affectedby moderate stress, while chlorophyll fluorescence and chlorophyll content were onlyaffected by severe stress. Drought stress decreased net photosynthesis rate (Pn), stomatalconductance, light-use efficiency and RWC, and increased leaf temperature. Therespiration rates (Tr) were kept within a narrower range than Pn, resulting in aprogressively increased instantaneous water use effiecency (WUEi) under drought stress.Moreover, drought stress also affected the response curve of Pn to RAR, there was adepression light saturation point (Lsat) and maximum Pn (Pnmax) for moderate andsevere stressed seedling. However, diurnal changes of gas exchange parameters did notdiffer among water supplies although maximum daily Pn declined under severe stress.VISevere stress reduced Fv/Fm, Yield and qP while increased NPQ and chlorophyll content.Photosynthetic activity decreased during drought stress period due to stomatal andnon-stomatal limitations. The relative contribution of these limitations was associatedwith the severity of stress. The limitation to Pn was caused mainly by stomatal limitationunder moderate drought stress, and by the predominance of non-stomatal limitation undersevere stress. In this case, 40% FC water supply may be a non-stomatal limitation 5 Interspecific differences in drought tolerance of shrubs Three shrubs exhibited good performance throughout the experiment process, evenif at 20% FC treatment there were no any seedlings died, 80% FC water supply wassuitable for their establishment and growth. S. davidii minimized their water loss byreducing total leaf area and growth rate, as well as maintained higher RWC and Pncompared to the other two species under drought stress, thus they might be more tolerantto the drought stress than the other two species. On the contrary, it was found that C.polyantha and B. faberi var. microphylla had higher water loss because of their stomatalconductance and higher leaf area ratios. They reduced water loss with shedding theirleaves and changing leaf orientation under drought stress. Based on their responses, thestudied species could be categorized into two: (1) S. davidii with a tolerance mechanismin response to drought stress; (2) C. polyantha and B. faberi var. microphylla withdrought avoidance mechanism. These results indicated that slow-growing shrub speciesare better adapted to drought stress than intermediate or fast-growing species in present orpredicted drought conditions. Therefore, selecting rapid-growing species might leavethese seedlings relatively at a risk of extreme drought.

Blue-violet luminescence double peak of In-doped films prepared by radio frequency sputtering

ZnO films doped with different contents of indium were prepared by radio frequency sputtering technique. The structural, optical and emission properties of the films were characterized at room temperature using XRD, XPS, UV-vis-NIR and PL techniques. Results showed that the indium was successfully incorporated into the c-axis preferred orientated ZnO films, and the In-doped ZnO films are of over 80% optical transparency in the visible range. Furthermore, a double peak of blue-violet emission with a constant energy interval (similar to 0.17 eV) was observed in the PL spectra of the samples with area ratio of indium chips to the Zn target larger than 2.0%. The blue peak comes from the electron transition from the Zn-i level to the top of the valence band and the violet peak from the In-Zn donor level to the V-Zn level, respectively.