Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes

Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback (DFB) laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.

High-power AlGaInP laser diodes with current-injection-free region near the laser facet

A high-power AlGaInP laser diode with current-injection-free region near the facet is successfully fabricated by metaorganic chemical vapor deposition (MOCVD) using the (100) direction n-GaAs substrates with a misorientation of 15 deg toward the (011) direction. The maximum continuous wave output power is about 90 mW for the traditional structure. In comparison, the maximum output power is enhanced by about 67%, and achieves 150 mW for LDs with current-infection-free regions. The fundamental transverse-mode operation is obtained up to 70 mW. Output characteristics at high temperatures are also improved greatly for an LD with a current-injection-free region, and the highest operation temperature is 70 C at 50 mW without kink. The threshold current is about 33 mA, the operation current and the slope efficiency at 100 mW are 120 mA and 0.9 mW/mA, respectively. The lasing wavelength is 658.4 nm at room-temperature 50 mW. (c) 2006 Society of Photo-Optical Instrumentation Engineers.

Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m)

In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 mum, The material system of interest consists of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. Some key parameters of the laser structure are theoretically analyzed, and their effects on the laser performance are discussed. The laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low-threshold current density, high internal quantum efficiency, and extremely low internal loss. High-performance broad-area multimode and ridge-waveguide single-mode laser devices are fabricated. For 100-mum-wide stripe lasers having a cavity length of 800 mum, a high slope efficiency of 1.08 W-A, a low vertical beam divergence of 34 degrees, a high output power of over 4.45 W, and a very high characteristic temperature coefficient of 250 K were achieved. Lifetime tests performed at 1.2-1.3 W (12-13 mW/mum) demonstrates reliable performance. For 4-mum-wide ridge waveguide single-mode laser devices, a maximum output power of 394 mW and fundamental mode power up to 200 mW with slope efficiency of 0.91 mW/mum are obtained.

An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.

High-Power Distributed Feedback Laser Diodes Emitting at 820nm

By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.

High power AlGaInP laser diodes with zinc-diffused window mirror structure

The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.

High Power 940 nm Al-free Active Region Laser Diodes and Bars with a Broad Waveguide

The 940 nm Al-free active region laser diodes and bars with a broad waveguide were designed and fabricated. The stuctures were grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 6.7 W in the 100 f^m broad-area laser diodes has been measured, and is 2. 5 times higher than that in the Al-containing active region laser diodes with a narrow waveguide and 1. 7 times higher than that in Al-free active region laser diodes with a narrow waveguide. The 19 % fill-factor laser diode bars emit 33 W, and they can operate at 15W with low degradation rates.

Temperature changes on the root surfaces of mandibular incisors after an 810-nm high-intensity intracanal diode laser irradiation

Temperature changes caused by laser irradiation can promote damage to the surrounding dental tissues. In this study, we evaluated the temperature changes of recently extracted human mandibular incisors during intracanal irradiation with an 810-nm diode laser at different settings. Fifty mandibular incisors were enlarged up to an apical size of ISO No. 40 file. After the final rinse with 17% ethylenediaminetetraacetic acid, 0.2% lauryl sodium sulfate biologic detergent, and sterile water, samples were irradiated with circular movements from apex to crown through five different settings of output power (1.5, 2.0, 2.5, 3.0, and 3.5 W) in continuous mode. The temperature changes were measured on both sides of the apical and middle root thirds using two thermopar devices. A temperature increase of 7 degrees C was considered acceptable as a safe threshold when applying the diode laser. Results: The results showed that only 3.5-W output power increased the outer surface temperature above the critical value. Conclusion: The recommended output power can be stipulated as equal to or less than 3 W to avoid overheating during diode laser irradiation on thin dentin walls. (c) 2012 Society of Photo-Optical Instrumentation Engineers (SPIE). [DOI: 10.1117/1.JBO.17.1.015006]

Optical power stabilization of a laser diode for qnd measurement

La realizzazione di stati non classici del campo elettromagnetico e in sistemi di spin è uno stimolo alla ricerca, teorica e sperimentale, da almeno trent'anni. Lo studio di atomi freddi in trappole di dipolo permette di avvicinare questo obbiettivo oltre a offrire la possibilità di effettuare esperimenti su condesati di Bose Einstein di interesse nel campo dell'interferometria atomica. La protezione della coerenza di un sistema macroscopico di spin tramite sistemi di feedback è a sua volta un obbiettivo che potrebbe portare a grandi sviluppi nel campo della metrologia e dell'informazione quantistica. Viene fornita un'introduzione a due tipologie di misura non considerate nei programmi standard di livello universitario: la misura non distruttiva (Quantum Non Demolition-QND) e la misura debole. Entrambe sono sfruttate nell'ambito dell'interazione radiazione materia a pochi fotoni o a pochi atomi (cavity QED e Atom boxes). Una trattazione delle trappole di dipolo per atomi neutri e ai comuni metodi di raffreddamento è necessaria all'introduzione all'esperimento BIARO (acronimo francese Bose Einstein condensate for Atomic Interferometry in a high finesse Optical Resonator), che si occupa di metrologia tramite l'utilizzo di condensati di Bose Einstein e di sistemi di feedback. Viene descritta la progettazione, realizzazione e caratterizzazione di un servo controller per la stabilizzazione della potenza ottica di un laser. Il dispositivo è necessario per la compensazione del ligh shift differenziale indotto da un fascio laser a 1550nm utilizzato per creare una trappola di dipolo su atomi di rubidio. La compensazione gioca un ruolo essenziale nel miglioramento di misure QND necessarie, in uno schema di feedback, per mantenere la coerenza in sistemi collettivi di spin, recentemente realizzato.

Retinal Laser Lesion Visibility in Simultaneous Ultra-High Axial Resolution Optical Coherence Tomography

Ex vivo porcine retina laser lesions applied with varying laser power (20 mW–2 W, 10 ms pulse, 196 lesions) are manually evaluated by microscopic and optical coherence tomography (OCT) visibility, as well as in histological sections immediately after the deposition of the laser energy. An optical coherence tomography system with 1.78 um axial resolution specifically developed to image thin retinal layers simultaneously to laser therapy is presented, and visibility thresholds of the laser lesions in OCT data and fundus imaging are compared. Optical coherence tomography scans are compared with histological sections to estimate the resolving power for small optical changes in the retinal layers, and real-time time-lapse scans during laser application are shown and analyzed quantitatively. Ultrahigh-resolution OCT inspection features a lesion visibility threshold 40–50 mW (17 reduction) lower than for visual inspection. With the new measurement system, 42 of the lesions that were invisible using state-of-the-art ophthalmoscopic methods could be detected.

High-Power High-Efficiency Laser Power Transmission at 100m Using Optimized Multi-Cell GaAs Converter

A high-power high-efficiency laser power transmission system at 100m based on an optimized multi-cell GaAs converter capable of supplying 9.7W of electricity is demonstrated. An I-V testing system integrated with a data acquisition circuit and an analysis software is designed to measure the efficiency and the I-V characteristics of the laser power converter (LPC). The dependencies of the converter’s efficiency with respect to wavelength, laser intensity and temperature are analyzed. A diode laser with 793nm of wavelength and 24W of power is used to test the LPC and the software. The maximum efficiency of the LPC is 48.4% at an input laser power of 8W at room temperature. When the input laser power is 24W (laser intensity of 60000W/m2), the efficiency is 40.4% and the output voltage is 4 V. The overall efficiency from electricity to electricity is 11.6%.

202nm continuous tuning from high-power external-cavity InAs/GaAs quantum-dot laser

Record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser is demonstrated. A maximum output power of 455mW and a side-mode suppression ratio >45dB in the central part of the tuning range are achieved. ©2010 IEEE.

Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers

A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability. (C) 2010 Optical Society of America

COMPREHENSIVE ELECTRICAL/OPTICAL/THERMAL CHARACTERIZATIONS OF HIGH POWER LIGHT EMITTING DIODES AND LASER DIODES

Thermal characterizations of high power light emitting diodes (LEDs) and laser diodes (LDs) are one of the most critical issues to achieve optimal performance such as center wavelength, spectrum, power efficiency, and reliability. Unique electrical/optical/thermal characterizations are proposed to analyze the complex thermal issues of high power LEDs and LDs. First, an advanced inverse approach, based on the transient junction temperature behavior, is proposed and implemented to quantify the resistance of the die-attach thermal interface (DTI) in high power LEDs. A hybrid analytical/numerical model is utilized to determine an approximate transient junction temperature behavior, which is governed predominantly by the resistance of the DTI. Then, an accurate value of the resistance of the DTI is determined inversely from the experimental data over the predetermined transient time domain using numerical modeling. Secondly, the effect of junction temperature on heat dissipation of high power LEDs is investigated. The theoretical aspect of junction temperature dependency of two major parameters – the forward voltage and the radiant flux – on heat dissipation is reviewed. Actual measurements of the heat dissipation over a wide range of junction temperatures are followed to quantify the effect of the parameters using commercially available LEDs. An empirical model of heat dissipation is proposed for applications in practice. Finally, a hybrid experimental/numerical method is proposed to predict the junction temperature distribution of a high power LD bar. A commercial water-cooled LD bar is used to present the proposed method. A unique experimental setup is developed and implemented to measure the average junction temperatures of the LD bar. After measuring the heat dissipation of the LD bar, the effective heat transfer coefficient of the cooling system is determined inversely. The characterized properties are used to predict the junction temperature distribution over the LD bar under high operating currents. The results are presented in conjunction with the wall-plug efficiency and the center wavelength shift.

EMI issues in high power and high level diode-clamped converters

Planar busbar is a good candidate to reduce interconnection inductance in high power inverters compared with cables. However, power switching components with fast switching combined with hard switched-converters produce high di/dt during turn off time and busbar stray inductance then becomes an important issue which creates overvoltage. It is necessary to keep the busbar stray inductance as low as possible to decrease overvoltage and Electromagnetic Interference (EMI) noise. In this paper, the effect of different transient current loops on busbar physical structure of the high-voltage high-level diode-clamped converters will be highlighted. Design considerations of proper planar busbar will also be presented to optimise the overall design of diode-clamped converters.