Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

In this letter, we report on the observation of Fermi-edge singularity in a modulation-doped AlGaN/GaN heterostructure grown on a c-face sapphire substrate by NH3 source molecular beam epitaxy. The two-dimensional electron gas (2DEG) characteristic of the structure is manifested by variable temperature Hall effect measurements down to 7 K. Low-temperature photoluminescence (PL) spectra show a broad emission band originating from the recombination of the 2DEG and localized holes. The enhancement in PL intensity in the high-energy side approaching Fermi level was observed at temperatures below 20 K. At higher temperatures, the enhancement disappears because of the thermal broadening of the Fermi edge. (C) 1998 American Institute of Physics. [S0003-6951(98)02543-1].

Ge related defect energy and microcavity effect in GaN epitaxial layer

Using solid-phase regrowth technique, Pd/Ge contact has been made on the GaN layer, and very good ohmic behavior was observed for the contact. The Photoluminescence (PL) spectra for different structures formed by the Pd/Ge contact, GaN layer, sapphire substrate, and mirror were studied, and a defect-assisted transition was found at 450 nm related to Ge impurity. The results show that the microcavity effect strongly influences the PL spectra of the band-gap and defect-assisted transitions.

1.3μm InGaAs/InAs/GaAs Self-Assembled Quantum Dot Laser Diode Grown by Molecular Beam Epitaxy

The growth of multi-layer InGaAs/InAs/GaAs self-assembled quantum dots （QDs） by molecular beam epitaxy （MBE） is investigated,and a QD laser diode lasing at 1.33μm in continuous operation mode at room temperature is reported. The full width at half maximum of the band edge emitting peaks of the photoluminescence （PL） spectra at room temperature is less than 35meV for most of the multi-layer QD samples,revealing good,reproducible MBE growth conditions. Moreover,atomic force microscopy images show that the QD surface density can be controlled in the range from 1×10^10 to 7 ×10^10 cm^-2 . The best PL properties are obtained at a QD surface density of about 4×10^10cm^-2. Edge emitting lasers containing 3 and 5 stacked QD layers as the active layer lasing at room temperature in continuous wave operation mode are reported.

The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells

Photoluminescence (PL) spectra of GaInNAs/GaAs multiple quantum wells and GaInNAs epilayers grown on GaAs substrate show an apparent "S-shape" temperature-dependence of the of dominant luminescence peak. At low temperature and weak excitation conditions, a PL peak related to nitrogen cluster-induced bound states can be well resolved in the PL spectra. It displays a remarkable red shift of up to 60 meV and is thermally quenched below 100 K with increasing temperature, being attributed to N-cluster induced bound states. The indium incorporation exhibits significant effect on the cluster formation. The rapid thermal annealing treatment at 750 C can essentially remove the bound states-induced peak.

Preparation and characterization of erbium doped sol-gel silica glasses

Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 ma, corresponding to the I-4(13/2)-I-4(15/2) transition, its full width at half-maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 Mn instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended X-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.

Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer

Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

Methods to tune the electronic states of self-organized InAs/GaAs quantum dots

After capping InAs islands with a thin enough GaAs layer, growth interruption has been introduced. Ejected energy of self-organized InAs/GaAs quantum dots has been successfully tuned in a controlled manner by changing the thickness of GaAs capping layer and the time of growth interruption and InAs layer thickness. The photoluminescence (PL) spectra showing the shift of the peak position reveals the tuning of the electronic states of the QD system. Enhanced uniformity of Quantum dots is observed judging from the decrease of full width at half maximum of FL. Injection InAs/GaAs quantum dot lasers have been fabricated and performed on various frequencies. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

Solvothermal synthesis and characterization of Ln (Eu3+, Tb3+) doped hydroxyapatite

Luminescent Ln (Eu3+, Tb3+) doped hydroxyapatite (Eu:HAp, Tb:HAp) phosphors were successfully fabricated via the cetyltrimethylammonium bromide (CTAB)/n-octane/n-butanol/water microemulsion-mediated solvothermal process. The structure, morphology, and optical properties were systematically characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectra (XPS), Fourier transform infrared spectroscopy (FT-IR), and photoluminescence (PL) spectra as well as the kinetic decays, respectively.

Microemulsion-mediated solvothermal synthesis and photoluminescent property of 3D flowerlike MnWO4 micro/nanocomposite structure

Novel three-dimensional (3D) flowerlike MnWO4 micro/nanocomposite structure has been successfully synthesized for the first time. The synthesized products were systematically studied by X-ray powder diffraction (XRD), field-emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM) and photoluminescence (PL) spectra. It is found that both reaction time and temperature have significant effects on the morphology of the products.

Luminescence functionalization of mesoporous silica with different morphologies and applications as drug delivery systems

Ordered mesoporous silica (MCM-41) particles with different morphologies were synthesized through a simple hydrothermal process. Then these silica particles were functionalized with luminescent YVO4:EU3+ layers via the Pechini sol-gel process. The obtained YVO4:Eu3+ and MCM-41 composites, which maintained the mesoporous structure of MCM-41 and the red luminescence property of YVO4:Eu3+ were investigated as drug delivery systems using ibuprofen (IBU) as model drug. The physicochemical properties of the samples were characterized by X-ray diffraction (XRD), Fourier transform-infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), N-2 adsorption, and photoluminescence (PL) spectra, respectively.

Shape controllable synthesis and upconversion properties of NaYbF4/NaYbF4 : Er3+ and YbF3/YbF3 : Er3+ microstructures

Ytterbium fluoride compounds with different crystal phases and morphologies, such as beta-NaYbF4 hexagonal microdisks, microprisms, microtubes, and alpha-NaYbF4 submicrospheres as well as YbF3 octahedra, have been synthesized via a facile hydrothermal route. X-Ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and photoluminescence (PL) spectra were used to characterize the samples.

Fabrication and luminescent properties of the core-shell structured YNbO4 : Eu3+/Tb3+@SiO2 spherical particles

The core-shell structured YNbO4:Eu3+/Tb3+@SiO2 particles were realized by coating the YNbO4:Etr(3+)/Tb3+ phosphors onto the surface of spherical silica via a sol-gel process. The obtained materials were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), Fourier transform IR spectroscopy (FT-IR), photoluminescence (PL) spectra, and cathodoluminescence (CL) spectra.

Sonochemical synthesis of monodispersed KY3F10 : Eu3+ nanospheres with bimodal size distribution

Monodispersed KY3F10:Eu3+ nanospheres with bimodal size distribution have been successfully synthesized via a facile and efficient sonochemical method in a surfactant-free system. Rare-earth nitrate (Y, Eu)(NO3)(3) and potassium fluoborate (KBF4) were used as precursors. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), and photoluminescence (PL) spectra were used to characterize the samples.

A magnetic, luminescent and mesoporous core-shell structured composite material as drug carrier

In this paper, hydrothermal synthesized Fe3O4 microspheres have been encapsulated with nonporous silica and a further layer of ordered mesoporous silica through a simple sol-gel process. The surface of the outer silica shell was further functionalized by the deposition of YVO4:Eu3+ phosphors, realizing a sandwich structured material with mesoporous, magnetic and luminescent properties. The multifunctional system was used as drug carrier to investigate the storage and release properties using ibuprofen (IBU) as model drug by the surface modification. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectra (XPS), Fourier transform infrared spectroscopy (FT-IR), N-2 adsorption/desorption, photoluminescence (PL) spectra, and superconducting quantum interference device (SQUID) were used to characterized the samples.

Multifunctional Hydroxyapatite Nanofibers and Microbelts as Drug Carriers

Luminescent, mesoporous, and bioactive europium-doped hydroxyapatite (HAp:Eu3+) nanofibers and microbelts have been prepared by a combination of sol-gel and electrospinning processes with a cationic surfactant as template. The obtained multifunctional hydroxyapatite nanofibers and microbelts, which have mesoporous structure and red luminescence, were tested as drug carriers by investigating their drug-storage/release properties with ibuprofen (IBU) as model drug. X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution (HR) TEM, FTIR spectroscopy, N-2 adsorption/desorption, photoluminescence (PL) spectra, and UV/Vis spectroscopy were used to characterize the structural, morphological, textural, and optical properties of the resulting samples.