974 resultados para gravimetric inversion
Resumo:
We present a technique for independently exciting two resonant modes of vibration in a single-crystal silicon bulk mode microresonator using the same electrode configuration through control of the polarity of the DC actuation voltage. Applications of this technique may include built-in temperature compensation by the simultaneous selective excitation of two closely spaced modes that may have different temperature coefficients of resonant frequency. The technique is simple and requires minimum circuit overhead for implementation. The technique is implemented on square plate resonators with quality factors as high as 3.06 × 106. Copyright © 2008 by ASME.
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19 p.
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xix, 213 p.
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We analyse the physical origin of population inversion via continuous wave two-colour coherent excitation in three-level systems by dressing the inverted transition. Two different mechanisms are identified as being responsible for the population inversion. For V-configured systems and cascade (E) configured systems with inversion on the lower transition, the responsible mechanism is the selective trapping of dressed states, and the population inversion approaches the ideal value of 1. For Lambda-configured systems and Xi-configured systems with inversion on the upper transition, population inversion is based on the selective excitation of dressed states, with the population inversion tending towards 0.5. As the essential difference between these two mechanisms, the selective trapping of dressed states occurs in systems with strong decay into dressed states while the selective excitation appears in systems with strong decay out of dressed states.
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The transient evolution processes and steady outputs of continuous wave lasing without inversion (LWI) and self-pulsing LWI in a resonant open V type three-level system are studied. It was found that the two kinds of LWI have some obvious differences not only from the steady outputs but also from the transient evolution processes. The effects of the unsaturated gain coefficient, cavity loss coefficient, ratio of the atomic injection rates and atomic exit rate on the transient evolution processes and steady outputs are discussed.