High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

Perpendicular-electric-field dependence of exciton binding energy studied by continuous-wave photoluminescence

The reduction of exciton binding energy induced by a perpendicular electric field in a stepped quantum well is studied. From continuous-wave photoluminescence spectra at 77 K we have observed an obvious blueshift of the exciton peak due to a spatially direct-to-indirect transition of excitons. A simple method is used to calculate the exciton binding energy while the inhomogeneous broadening is taken into account in a simple manner. The calculated result reproduces remarkably well the experimental observation.

一种利用光电流和光透过曲线测量电吸收调制器插入损耗因素的方法

提出一种新颖的方法用于测量电吸收调制器(electroabsorption modulator,EAM)各种因素造成的插入损耗.此方法仅需要测量波长相关的光电流(Iph-λ)和光透过功率(P-λ)的数据,通过最小二乘法拟合出结果.理论分析表明此方法较精确,实验表明测试结果与理论拟合结果自洽得很好.

采用单边大光腔结构改善电吸收调制器的光场分布

设计并制备了具有单边大光腔结构的半导体电吸收(electroabsorption,EA)调制器.模拟和测试的结果均表明:单边大光腔结构能有效地改善EA调制器的光场分布,使椭圆形的近场光斑变得圆形化,从而达到与圆形模式光纤之间的匹配,有利于提高耦合效率.

用于10Gb／s传输系统的电吸收调制器与分布反馈激光器集成光源

采用超低压（22×10^2Pa）选择区域生长（selective area growth，SAG）金属有机化学气相沉积（metal-organic chemical vapor deposition。MOCVD）技术成功制备了应变型InGaAsP／InGaAsP电吸收调制器（electroabsorption modulator，EAM）与分布反馈激光器（distribute feedback laser，DFB）单片集成光源的新型光电器件．实验结果表明。采用该技术制备的集成器件表现出了良好的性能

超低压选择区域生长法制备产生10GHz重复率超短光脉冲的级联电吸收调制器与分布反馈激光器单片集成光源

采用超低压（22×10^2Pa）选择区域生长（selective area growth，SAG）金属有机化学气相沉积（metal—organic chemical vapor deposition，MOCVD）技术成功制备了InGaAsP／InGaAsP级联电吸收调制器（electroabsorption modulator，EAM）与分布反馈激光器（distributed feedback laser，DFB）单片集成光源的新型光电器件．实验结果表明，采用该技术制备的器件具有良好的性能

单脊条形可调谐电吸收调制DFB激光器

报道了一种波长可热调谐的电吸收调制分布反馈激光器(Electroabsorption modulated distributed feedback laser,EML)。在激光器条形的侧面淀积一薄膜加热器，EML实现了2.2nm的连续调谐。在调谐范围内，激光器输出功率的变化小于3dB。采用端面有效反射率方法和耦合波理论的计算表明

High-speed DFB laser and EMLs

High speed reliable 1.55 mum AlGaInAs multi-quantum well ridge waveguide (RW) DFB laser is developed with a 9GHz -3dB bandwidth. A high speed self aligned constricted mesa 1.55 mum DFB laser is achieved with a 9.1GHz -3dB bandwidth and a more than 20mW output power. A cost effective single RW electroabsorption modulated DFB laser (EMLs) is proposed and successfully fabricated by adopting selective area growth techniques:. a penalty free transmission at 2.5Gbps over 280Km normal G.652 single mode fiber is realized by using this EML as light source. For achieving a better performance EMLs. a gain-coupled DFB laser with etched quantum wells is successfully integrated with a electroabsorption modulator (EAM) for a high single mode yield. the wavelength of a EML is tuned in a 3.2nm range by a integrated thin-film heater for the wavelength routing. a buried heterostructure DFB laser is also successfully integrated with a RW EAM for a lower threshold current. lower EAM parasitic capacitance and higher output power.

Investigation on integrated high speed DFB light source and narrow bandwidth RCE photodetector for WDM fiber communication network application

Electroabsorption (EA) modulator integrated with partially gain coupling distributed feedback (DFB) lasers have been fabricated and shown high single mode yield and wavelength stability. The small signal bandwidth is about 7.5 GHz. Strained Si1-chiGechi/Si multiple quantum well (MQW) resonant-cavity enhanced (RCE) photodetectors with SiO2/Si distributed Bragg reflector (DBR) as the mirrors have been fabricated and shown a clear narrow bandwidth response. The external quantum efficiency at 1.3 mum is measured to be about 3.5% under reverse bias of 16 V. A novel GaInNAs/GaAs MQW RCE p-i-n photodetector with high reflectance GaAs/ALAs DBR mirrors has also been demonstrated and shown the selectively detecting function with the FWHM of peak response of 12 nm.

Strained MQW electro-absorption modulators with high extinction ratio and low capacitance

We fabricate an electro-absorption modulator for optical network system using a new strategy, the improved modulation properties of the strained InGaAs/InAlAs MQW show it's polarization independent, high extinction ratio (> 40dB) and low capacitance (C <0.6pF) which can achieve an ultra-high frequency(> 10GHz). The device is be used in 10Gbps optical time division multiplex (OTDM) system as a signal generator.

High speed nonlinear optical components for next-generation optical communications

Electronic signal processing systems currently employed at core internet routers require huge amounts of power to operate and they may be unable to continue to satisfy consumer demand for more bandwidth without an inordinate increase in cost, size and/or energy consumption. Optical signal processing techniques may be deployed in next-generation optical networks for simple tasks such as wavelength conversion, demultiplexing and format conversion at high speed (≥100Gb.s-1) to alleviate the pressure on existing core router infrastructure. To implement optical signal processing functionalities, it is necessary to exploit the nonlinear optical properties of suitable materials such as III-V semiconductor compounds, silicon, periodically-poled lithium niobate (PPLN), highly nonlinear fibre (HNLF) or chalcogenide glasses. However, nonlinear optical (NLO) components such as semiconductor optical amplifiers (SOAs), electroabsorption modulators (EAMs) and silicon nanowires are the most promising candidates as all-optical switching elements vis-à-vis ease of integration, device footprint and energy consumption. This PhD thesis presents the amplitude and phase dynamics in a range of device configurations containing SOAs, EAMs and/or silicon nanowires to support the design of all optical switching elements for deployment in next-generation optical networks. Time-resolved pump-probe spectroscopy using pulses with a pulse width of 3ps from mode-locked laser sources was utilized to accurately measure the carrier dynamics in the device(s) under test. The research work into four main topics: (a) a long SOA, (b) the concatenated SOA-EAMSOA (CSES) configuration, (c) silicon nanowires embedded in SU8 polymer and (d) a custom epitaxy design EAM with fast carrier sweepout dynamics. The principal aim was to identify the optimum operation conditions for each of these NLO device configurations to enhance their switching capability and to assess their potential for various optical signal processing functionalities. All of the NLO device configurations investigated in this thesis are compact and suitable for monolithic and/or hybrid integration.

Analysis and optimisation of semiconductor reflective modulators for optical networks

Reflective modulators based on the combination of an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) are attractive devices for applications in long reach carrier distributed passive optical networks (PONs) due to the gain provided by the SOA and the high speed and low chirp modulation of the EAM. Integrated R-EAM-SOAs have experimentally shown two unexpected and unintuitive characteristics which are not observed in a single pass transmission SOA: the clamping of the output power of the device around a maximum value and low patterning distortion despite the SOA being in a regime of gain saturation. In this thesis a detailed analysis is carried out using both experimental measurements and modelling in order to understand these phenomena. For the first time it is shown that both the internal loss between SOA and R-EAM and the SOA gain play an integral role in the behaviour of gain saturated R-EAM-SOAs. Internal loss and SOA gain are also optimised for use in a carrier distributed PONs in order to access both the positive effect of output power clamping, and hence upstream dynamic range reduction, combined with low patterning operation of the SOA Reflective concepts are also gaining interest for metro transport networks and short reach, high bit rate, inter-datacentre links. Moving the optical carrier generation away from the transmitter also has potential advantages for these applications as it avoids the need for cooled photonics being placed directly on hot router line-cards. A detailed analysis is carried out in this thesis on a novel colourless reflective duobinary modulator, which would enable wavelength flexibility in a power-efficient reflective metro node.

Analytical expressions for the FM and AM responses of an integrated laser-modulator

The need for low-chirp and compact transmitters for high-bit-rate optical links has led to the development of integrated laser electroabsorption modulators (ILM). We have investigated feedback effects inducing frequency chirp by developing a model treating the ILM as a whole and obtained analytical expressions of the FM and AM responses. The variation of the frequency chirp with the residual facet reflectivity of the modulator section is calculated. The model predicts the unusual peak in the measured frequency responses and has been used to define design rules.

All optical networking beyond 10 Gbits/s OTDM networks based on electro-optic modulators and fibre ring lasers

This thesis examines options for high capacity all optical networks. Specifically optical time division multiplexed (OTDM) networks based on electro-optic modulators are investigated experimentally, whilst comparisons with alternative approaches are carried out. It is intended that the thesis will form the basis of comparison between optical time division multiplexed networks and the more mature approach of wavelength division multiplexed networks. Following an introduction to optical networking concepts, the required component technologies are discussed. In particular various optical pulse sources are described with the demanding restrictions of optical multiplexing in mind. This is followed by a discussion of the construction of multiplexers and demultiplexers, including favoured techniques for high speed clock recovery. Theoretical treatments of the performance of Mach Zehnder and electroabsorption modulators support the design criteria that are established for the construction of simple optical time division multiplexed systems. Having established appropriate end terminals for an optical network, the thesis examines transmission issues associated with high speed RZ data signals. Propagation of RZ signals over both installed (standard fibre) and newly commissioned fibre routes are considered in turn. In the case of standard fibre systems, the use of dispersion compensation is summarised, and the application of mid span spectral inversion experimentally investigated. For green field sites, soliton like propagation of high speed data signals is demonstrated. In this case the particular restrictions of high speed soliton systems are discussed and experimentally investigated, namely the increasing impact of timing jitter and the downward pressure on repeater spacings due to the constraint of the average soliton model. These issues are each addressed through investigations of active soliton control for OTDM systems and through investigations of novel fibre types respectively. Finally the particularly remarkable networking potential of optical time division multiplexed systems is established, and infinite node cascadability using soliton control is demonstrated. A final comparison of the various technologies for optical multiplexing is presented in the conclusions, where the relative merits of the technologies for optical networking emerges as the key differentiator between technologies.

OTDM network processing using all-optical and electro-optical devices

The current optical communications network consists of point-to-point optical transmission paths interconnected with relatively low-speed electronic switching and routing devices. As the demand for capacity increases, then higher speed electronic devices will become necessary. It is however hard to realise electronic chip-sets above 10 Gbit/s, and therefore to increase the achievable performance of the network, electro-optic and all-optic switching and routing architectures are being investigated. This thesis aims to provide a detailed experimental analysis of high-speed optical processing within an optical time division multiplexed (OTDM) network node. This includes the functions of demultiplexing, 'drop and insert' multiplexing, data regeneration, and clock recovery. It examines the possibilities of combining these tasks using a single device. Two optical switching technologies are explored. The first is an all-optical device known as 'semiconductor optical amplifier-based nonlinear optical loop mirror' (SOA-NOLM). Switching is achieved by using an intense 'control' pulse to induce a phase shift in a low-intensity signal propagating through an interferometer. Simultaneous demultiplexing, data regeneration and clock recovery are demonstrated for the first time using a single SOA-NOLM. The second device is an electroabsorption (EA) modulator, which until this thesis had been used in a uni-directional configuration to achieve picosecond pulse generation, data encoding, demultiplexing, and 'drop and insert' multiplexing. This thesis presents results on the use of an EA modulator in a novel bi-directional configuration. Two independent channels are demultiplexed from a high-speed OTDM data stream using a single device. Simultaneous demultiplexing with stable, ultra-low jitter clock recovery is demonstrated, and then used in a self-contained 40 Gbit/s 'drop and insert' node. Finally, a 10 GHz source is analysed that exploits the EA modulator bi-directionality to increase the pulse extinction ratio to a level where it could be used in an 80 Gbit/s OTDM network.