983 resultados para circuit model


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A careful analysis of the impedance response of SnO2 thick films under vacuum and air atmosphere is reported in the present work. The AC electrical resistance was analyzed and it was shown that it is highly frequency dependent. Different models and its equivalent circuit representation were proposed and carefully analyzed based on the microstructure features of the device. Basically, an interpretation of the frequency dependent resistance was proposed based on the fact that different grains characteristics and junctions exist. These different grains and junctions are the main source of resistance dependent feature. An equivalent circuit model, considering different grain sizes associated with different grain boundary junctions characteristics, was introduced so that a consistent interpretation of the results was possible.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Electrochemical analyses on confined electroactive molecular layers, herein exemplified with electroactive self-assembled monolayers, sample current contributions that are significantly influenced by additional nonfaradaic and uncompensated resistance effects that, though unresolved, can strongly distort redox analysis. Prior work has shown that impedance-derived capacitance spectroscopy approaches can cleanly resolve all contributions generated at such films, including those which are related to the layer dipolar/electrostatic relaxation characteristics. We show herein that, in isolating the faradaic and nonfaradaic contributions present within an improved equivalent circuit description of such interfaces, it is possible to accurately simulate subsequently observed cyclic voltammograms (that is, generated current versus potential patterns map accurately onto frequency domain measurements). Not only does this enable a frequency-resolved quantification of all components present, and in so doing, a full validation of the equivalent circuit model utilized, but also facilitates the generation of background subtracted cyclic voltammograms remarkably free from all but faradaic contributions. © 2012 American Chemical Society.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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A influência da velocidade de circulação do leite na adesão bacteriana de Pseudomonas aeruginosa foi avaliada em teste de uso simulado por meio de um modelo de circuito de processamento de leite. O circuito é composto por uma tubulação de aço inoxidável AISI 304, com 1,9 cm de diâmetro e 5,8 m de comprimento, além de um tanque de 25 L, utilizado como reservatório do produto e das soluções sanitizantes. O reservatório foi acoplado a uma bomba centrífuga de ½ HP, para impulsionar o alimento ou soluções de higienização pelo sistema equipado com cupons de prova em aço inoxidável nas formas cilíndrica, cotovelo 90º e T. As velocidades de circulação foram de 0,5, 1,0 e 1,5 m.s–1, correspondentes a fluxo turbulento com número de Reynolds de 14.000, 28.000 e 42.000, respectivamente. Quando se utilizou velocidade de 0,5 m.s–1, permaneceram aderidas à superfície 10,7% das células. Já nas velocidades e 1,0 e 1,5 m.s–1 as porcentagens de adesão foram de 5,36 e 4,9%, respectivamente, o que demonstra uma menor remoção de células aderidas à medida que o fluxo diminui, permitindo assim que mais células permaneçam aderidas na linha de produção, o que pode favorecer a formação de biofilmes.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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A transmission line is characterized by the fact that its parameters are distributed along its length. This fact makes the voltages and currents along the line to behave like waves and these are described by differential equations. In general, the differential equations mentioned are difficult to solve in the time domain, due to the convolution integral, but in the frequency domain these equations become simpler and their solutions are known. The transmission line can be represented by a cascade of π circuits. This model has the advantage of being developed directly in the time domain, but there is a need to apply numerical integration methods. In this work a comparison of the model that considers the fact that the parameters are distributed (Universal Line Model) and the fact that the parameters considered concentrated along the line (π circuit model) using the trapezoidal integration method, and Simpson's rule Runge-Kutta in a single-phase transmission line length of 100 km subjected to an operation power. © 2003-2012 IEEE.

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Ultra-thin (thicknesses of 50-90 nm) nanocomposite films of cobalt ferrite nanoparticles (np-CoFe2O4, 18 nm in diameter) and polyelectrolytes (doped polyaniline-PANI, poly-3,4-ethylenedioxy thiophene: polystyrene sulfonic acid-PEDOT:PSS, and sulfonated lignin-SL) are assembled layer-by-layer onto interdigitated microelectrodes aiming at to create novel nanostructured sensoactive materials for liquid media chemical sensors. The nanocomposites display a distinctive globular morphology with nanoparticles densely-packed while surrounded by polyelectrolytes. Due to the presence of np-CoFe2O4 the nanocomposites display low electrical conductivity according to impedance data. On the other hand, this apparent shortcoming turns such nanocomposites much more sensitive to the presence of ions in solution than films made exclusively of conducting polyelectrolytes. For example, the electrical resistance of np-CoFe2O4/PEDOT:PSS and PANI/SL/np-CoFe2O4/SL architectures has a 10-fold decrease when they are immersed in 20 mmol. L-1 NaCl solution. Impedance spectra fitted with the response of an equivalent circuit model suggest that the interface created between nanoparticles and polyelectrolytes plays a major role on the nanocomposites electrical/dielectrical behavior. Since charge transport is sensitive to nanoparticle-polyelectrolyte interfaces as well as to the physicochemical conditions of the environment, the np-CoFe2O4-based nanocomposites can be used as sensing elements in chemical sensors operated under ac regime and room temperature.

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A control-oriented model of a Dual Clutch Transmission was developed for real-time Hardware In the Loop (HIL) applications, to support model-based development of the DCT controller. The model is an innovative attempt to reproduce the fast dynamics of the actuation system while maintaining a step size large enough for real-time applications. The model comprehends a detailed physical description of hydraulic circuit, clutches, synchronizers and gears, and simplified vehicle and internal combustion engine sub-models. As the oil circulating in the system has a large bulk modulus, the pressure dynamics are very fast, possibly causing instability in a real-time simulation; the same challenge involves the servo valves dynamics, due to the very small masses of the moving elements. Therefore, the hydraulic circuit model has been modified and simplified without losing physical validity, in order to adapt it to the real-time simulation requirements. The results of offline simulations have been compared to on-board measurements to verify the validity of the developed model, that was then implemented in a HIL system and connected to the TCU (Transmission Control Unit). Several tests have been performed: electrical failure tests on sensors and actuators, hydraulic and mechanical failure tests on hydraulic valves, clutches and synchronizers, and application tests comprehending all the main features of the control performed by the TCU. Being based on physical laws, in every condition the model simulates a plausible reaction of the system. The first intensive use of the HIL application led to the validation of the new safety strategies implemented inside the TCU software. A test automation procedure has been developed to permit the execution of a pattern of tests without the interaction of the user; fully repeatable tests can be performed for non-regression verification, allowing the testing of new software releases in fully automatic mode.

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The aim of this thesis is to investigate the nature of quantum computation and the question of the quantum speed-up over classical computation by comparing two different quantum computational frameworks, the traditional quantum circuit model and the cluster-state quantum computer. After an introductory survey of the theoretical and epistemological questions concerning quantum computation, the first part of this thesis provides a presentation of cluster-state computation suitable for a philosophical audience. In spite of the computational equivalence between the two frameworks, their differences can be considered as structural. Entanglement is shown to play a fundamental role in both quantum circuits and cluster-state computers; this supports, from a new perspective, the argument that entanglement can reasonably explain the quantum speed-up over classical computation. However, quantum circuits and cluster-state computers diverge with regard to one of the explanations of quantum computation that actually accords a central role to entanglement, i.e. the Everett interpretation. It is argued that, while cluster-state quantum computation does not show an Everettian failure in accounting for the computational processes, it threatens that interpretation of being not-explanatory. This analysis presented here should be integrated in a more general work in order to include also further frameworks of quantum computation, e.g. topological quantum computation. However, what is revealed by this work is that the speed-up question does not capture all that is at stake: both quantum circuits and cluster-state computers achieve the speed-up, but the challenges that they posit go besides that specific question. Then, the existence of alternative equivalent quantum computational models suggests that the ultimate question should be moved from the speed-up to a sort of “representation theorem” for quantum computation, to be meant as the general goal of identifying the physical features underlying these alternative frameworks that allow for labelling those frameworks as “quantum computation”.

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A microfluidic Organ-on-Chip has been developed for monitoring the epithelial cells monolayer. Equivalent circuit Model was used to determine the electrical properties from the impedance spectra of the epithelial cells monolayer. Black platinum on platinum electrodes was electrochemically deposited onto the surface of electrodes to reduce the influence of the electrical double layer on the impedance measurements. Measurements of impedance with an Impedance Analyzer were done to validate the equivalent circuit model and the decrease of the double layer effect. A Lock-in Amplifier was designed to measure the impedance.

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The present thesis work proposes a new physical equivalent circuit model for a recently proposed semiconductor transistor, a 2-drain MSET (Multiple State Electrostatically Formed Nanowire Transistor). It presents a new software-based experimental setup that has been developed for carrying out numerical simulations on the device and on equivalent circuits. As of 2015, we have already approached the scaling limits of the ubiquitous CMOS technology that has been in the forefront of mainstream technological advancement, so many researchers are exploring different ideas in the realm of electrical devices for logical applications, among them MSET transistors. The idea that underlies MSETs is that a single multiple-terminal device could replace many traditional transistors. In particular a 2-drain MSET is akin to a silicon multiplexer, consisting in a Junction FET with independent gates, but with a split drain, so that a voltage-controlled conductive path can connect either of the drains to the source. The first chapter of this work presents the theory of classical JFETs and its common equivalent circuit models. The physical model and its derivation are presented, the current state of equivalent circuits for the JFET is discussed. A physical model of a JFET with two independent gates has been developed, deriving it from previous results, and is presented at the end of the chapter. A review of the characteristics of MSET device is shown in chapter 2. In this chapter, the proposed physical model and its formulation are presented. A listing for the SPICE model was attached as an appendix at the end of this document. Chapter 3 concerns the results of the numerical simulations on the device. At first the research for a suitable geometry is discussed and then comparisons between results from finite-elements simulations and equivalent circuit runs are made. Where points of challenging divergence were found between the two numerical results, the relevant physical processes are discussed. In the fourth chapter the experimental setup is discussed. The GUI-based environments that allow to explore the four-dimensional solution space and to analyze the physical variables inside the device are described. It is shown how this software project has been structured to overcome technical challenges in structuring multiple simulations in sequence, and to provide for a flexible platform for future research in the field.

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Medical instrumentation used in diagnosis and treatment relies on the accurate detection and processing of various physiological events and signals. While signal detection technology has improved greatly in recent years, there remain inherent delays in signal detection/ processing. These delays may have significant negative clinical consequences during various pathophysiological events. Reducing or eliminating such delays would increase the ability to provide successful early intervention in certain disorders thereby increasing the efficacy of treatment. In recent years, a physical phenomenon referred to as Negative Group Delay (NGD), demonstrated in simple electronic circuits, has been shown to temporally advance the detection of analog waveforms. Specifically, the output is temporally advanced relative to the input, as the time delay through the circuit is negative. The circuit output precedes the complete detection of the input signal. This process is referred to as signal advance (SA) detection. An SA circuit model incorporating NGD was designed, developed and tested. It imparts a constant temporal signal advance over a pre-specified spectral range in which the output is almost identical to the input signal (i.e., it has minimal distortion). Certain human patho-electrophysiological events are good candidates for the application of temporally-advanced waveform detection. SA technology has potential in early arrhythmia and epileptic seizure detection and intervention. Demonstrating reliable and consistent temporally advanced detection of electrophysiological waveforms may enable intervention with a pathological event (much) earlier than previously possible. SA detection could also be used to improve the performance of neural computer interfaces, neurotherapy applications, radiation therapy and imaging. In this study, the performance of a single-stage SA circuit model on a variety of constructed input signals, and human ECGs is investigated. The data obtained is used to quantify and characterize the temporal advances and circuit gain, as well as distortions in the output waveforms relative to their inputs. This project combines elements of physics, engineering, signal processing, statistics and electrophysiology. Its success has important consequences for the development of novel interventional methodologies in cardiology and neurophysiology as well as significant potential in a broader range of both biomedical and non-biomedical areas of application.

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An equivalent circuit model is applied in order to describe the operation characteristics of quantum dot intermediate band solar cells (QD-IBSCs), which accounts for the recombination paths of the intermediate band (IB) through conduction band (CB), the valence band (VB) through IB, and the VB-CB transition. In this work, fitting of the measured dark J-V curves for QD-IBSCs (QD region being non-doped or direct Si-doped to n-type) and a reference GaAs p-i-n solar cell (no QDs) were carried out using this model in order to extract the diode parameters. The simulation was then performed using the extracted diode parameters to evaluate solar cell characteristics under concentration. In the case of QDSC with Si-doped (hence partially-filled) QDs, a fast recovery of the open-circuit voltage (Voc) was observed in a range of low concentration due to the IB effect. Further, at around 100X concentration, Si-doped QDSC could outperform the reference GaAs p-i-n solar cell if the current source of IB current source were sixteen times to about 10mA/cm2 compared to our present cell.