A novel photonic crystal vertical cavity surface emitting laser based on coherent coupling

We demonstrate a novel oxide confined GaAs-based photonic crystal vertical cavity surface emitting laser (PC-VCSEL) operating at a wavelength of 850 nm based on coherent coupling. A ring-shaped light-emitting aperture is added to the conventional PC-VCSEL, and coherent coupling is achieved between the central defect aperture and the ring-shaped light-emitting aperture. Measurements show that under the continuous-wave (CW) injected current of 20 mA, a high power of 2 mW is obtained, and the side mode suppression ratio (SMSR) is larger than 20 dB. The average divergence angle is 4.2 degrees at the current level of 20 mA. Compared with the results ever reported, the divergence angle is reduced.

Room temperature operation of photonic-crystal distributed-feedback quantum cascade lasers with single longitudinal and lateral mode performance

We demonstrate room temperature operation of photonic-crystal distributed-feedback quantum cascade lasers emitting at 4.7 mu m. A rectangular photonic crystal lattice perpendicular to the cleaved facet was defined using holographic lithography. The anticrossing of the index- and Bragg-guided dispersions of rectangular lattice forms the band-edge mode with extended mode volume and reduced group velocity. Utilizing this coupling mechanism, single mode operation with a near-diffractive-limited divergence angle of 12 degrees is obtained for 33 mu m wide devices in a temperature range of 85-300 K. The reduced threshold current densities and improved heat dissipation management contribute to the realization of devices' room temperature operation.

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

Monolithically Integrated Laser Diode and Electroabsorption Modulator with Dual-Waveguide Spot-Size Converter Output

A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dualwaveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are demonstrated.The devices emit in a single transverse and quasi single longitudinal mode with an SMSR of 25.6dB. These devices exhibit a 3dB modulation bandwidth of 15. 0GHz, and modulator DC extinction ratios of 16.2dB. The output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7. 3°× 18. 0°,respectively, resulting in a 3. 0dB coupling loss with a cleaved single-mode optical fiber.

1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process

A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double-core structure is employed.For the spot-size converter,a buried ridge double-core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0.35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14.89°×18.18°,respectively,resulting in low-coupling losses with a cleaved optical fiber (3dB loss).

Novel electroabsorption modulator monolithically integrated with spot-size converter

A novel 1.55-μm spot-size converter integrated electroabsorption modulator was designed with conventional photolithography and chemical wet etching process. A ridge double-core structure was employed for the modulator, and a buried ridge double-core structure was incorporated for the spot-size converter. The passive waveguide was optically combined with a laterally tapered active waveguide to control the mode size. The figure of merit is 4.1667 dB/V(/100 μm) and the beam divergence angles in the horizontal and vertical directions were as small as 11.2 deg. and 13.0 deg., respectively.

Optimal distance from high power laser diode to cylindrical microlens in a coupling system

In a practical coupling system, a cylindrical microlens is used to collimate the emission of a high powerlaser diode (LD) in the dimension perpendicular to the junction plane. Using passive alignment, the LD isplaced in the focus of the cylindrical microlens generally, regardless of the performance of the multimodeoptical fiber and the LD. In this paper, a more complete analysis is arrived at by ray-tracing technique,by which the angle θ of the ray after refraction is computed as a function of the angle θo of the ray beforerefraction. The focus of the cylindrical microlens is not always the optimal position of the LD. In fact, inorder to achieve a higher coupling efficiency, the optimal distance from the LD to the cylindrical microlensis dependent on not only the radius R and the index of refraction n of the cylindrical microlens, but alsothe divergence angle of the LD in the dimension perpendicular to the junction plane and the numericalaperture (NA) of the multimode optical fiber. The results of this discussion are in good agreement withexperimental results.

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs

In this paper, we report on the design, growth and fabrication of 980nm strained InGaAs quantum well lasers employing novel material system of Al-free active region and AlGaAs cladding layers. The use of AlGaAs cladding instead of InGaP provides potential advantages in laser structure design, improvement of surface morphology and laser performance. We demonstrate an optimized broad-waveguide structure for obtaining high power 980nm quantum well lasers with low vertical beam divergence. The laser structure was grown by low-pressure metalorganic chemical vapor deposition, which exhibit a high internal quantum efficiency of similar to 90% and a low internal loss of 1.5-2.5 cm(-1). The broad-area and ridge-waveguide laser devices are both fabricated. For 100 mu m wide stripe lasers with cavity length of 800 mu m, a low threshold current of 170mA, a high slope efficiency of 1.0W/A and high output power of more than 3.5W are achieved. The temperature dependences of the threshold current and the emitting spectra demonstrate a very high characteristic temperature coefficient (T-o) of 200-250K and a wavelength shift coefficient of 0.34nm/degrees C. For 4 mu m-width ridge waveguide structure laser devices, a maximum output power of 340mW with GOD-free thermal roll-over characteristics is obtained.

Dynamic control of laser-produced proton beams

The emission characteristics of intense laser driven protons are controlled using ultrastrong (of the order of 10(9) V/m) electrostatic fields varying on a few ps time scale. The field structures are achieved by exploiting the high potential of the target (reaching multi-MV during the laser interaction). Suitably shaped targets result in a reduction in the proton beam divergence, and hence an increase in proton flux while preserving the high beam quality. The peak focusing power and its temporal variation are shown to depend on the target characteristics, allowing for the collimation of the inherently highly divergent beam and the design of achromatic electrostatic lenses.

Ballistic Focusing of Polyenergetic Protons Driven by Petawatt Laser Pulses

By using a thick (250 mu m) target with 350 mu m radius of curvature, the intense proton beam driven by a petawatt laser is focused at a distance of similar to 1 mm from the target for all detectable energies up to similar to 25 MeV. The thickness of the foil facilitates beam focusing as it suppresses the dynamic evolution of the beam divergence caused by peaked electron flux distribution at the target rear side. In addition, reduction in inherent beam divergence due to the target thickness relaxes the curvature requirement for short-range focusing. Energy resolved mapping of the proton beam trajectories from mesh radiographs infers the focusing and the data agree with a simple geometrical modeling based on ballistic beam propagation. © 2011 American Physical Society

1D-Leaky Wave Antenna Employing Parallel-Plate Waveguide Loaded With PRS and HIS

A new type of one-dimensional leaky-wave antenna (LWA) with independent control of the beam-pointing angle and beamwidth is presented. The antenna is based on a simple structure composed of a bulk parallel-plate waveguide (PPW) loaded with two printed circuit boards (PCBs), each one consisting of an array of printed dipoles. One PCB acts as a partially reflective surface (PRS), and the other grounded PCB behaves as a high impedance surface (HIS). It is shown that an independent control of the leaky-mode phase and leakage rate can be achieved by changing the lengths of the PRS and HIS dipoles, thus resulting in a flexible adjustment of the LWA pointing direction and directivity. The leaky-mode dispersion curves are obtained with a simple Transverse Equivalent Network (TEN), and they are validated with three-dimensional full-wave simulations. Experimental results on fabricated prototypes operating at 15 GHz are reported, demonstrating the versatile and independent control of the LWA performance by changing the PRS and HIS parameters.

Using low and high prepulses to enhance the J=0-1 transition at 19.6 nm in the Ne-like germanium XUV laser

We report a study of the effect of prepulses on XUV lasing of Ne-like germanium for an irradiation geometry where approximate to 20 mm long germanium slab targets were irradiated at approximate to 1.6 x 10(13) W cm(-2) using approximate to 0.7 ns (1.06 mu m) pulses from the VULCAN glass laser. Prepulses were generated at fractional power levels of approximate to 2 x 10(-4) (low) and approximate to 2 x 10(-2) (high) and arrived on target 5 and 3.2 ns respectively in advance of the main heating pulse, For both the low and high prepulses the output of the 3p-3s, J = 0-1, line at 19.6 nm was enhanced such that the peak radiant density (J/st) for this line became greater than that for the normally stronger J = 2-1 lines at 23.2 and 23.6 nm. The J = 0-1 line, whose FWHM duration was reduced from approximate to 450 ps to approximate to 100 ps, delivered approximate to 6 x more power (W) than the average for the combined J = 2-1 lines, whose FWHM duration was approximate to 500 ps for both levels of prepulse, The higher prepulse was more effective, yielding approximate to 2 x more radiant density and approximate to 7 x more power on both the J = 0-1 and J = 2-1 transitions compared to the low prepulse case, The most dramatic observation overall was the approximate to 40 x increase of power in the J = 0-1 line for the high prepulse (approximate to 2%) case compared with the zero prepulse case. These observations, coupled with measurements of beam divergence and beam deviation through refractive bending, as well as general agreement with modelling, lead us to conclude that, for germanium, the main influence of the prepulse is (a) to increase the energy absorbed from the main pulse, (b) to increase the volume of the gain zone and (c) to relax the plasma density gradients, particularly in the J = 0-1 gain zone.

Collisional exitation soft X-ray laser at 23.6 nm in a laser-produced cylindrical target

We have tested soft X-ray lasing in neon-like germanium with cylindrical targets where wave guiding and plasma confinement may affect lasing. An intense soft X-ray laser beam of 0.05 MW peak power and a narrow beam divergence (8 mrad) was produced at 23.6 nm with a 4 cm long straight cylindrical target of 0.72 mm inner diameter. Bending the cylindrical target to form a toroidal shape increased the lasing intensity by a factor of 3 accompanied with reduction of the beam divergence from 8 to 6 mrad.

COHERENCE AND DOUBLE-PASS AMPLIFICATION IN GE SOFT-X-RAY LASER

From measurements of spatial coherence and beam divergence of Ge soft x-ray laser at a far field, the x-ray laser beam has been characterized as a partially coherent Gaussian beam. Double-pass amplification will improve spatial and temporal coherence, spectral brightness and efficiency. Close to 100% geometrical coupling efficiency has been obtained in double pass amplification in Ge. Transient loss of feedback is attributed to mirror structure damage within the build-up time of the x-ray laser. Prospect for generation of coherent x-ray laser beam is discussed.