1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process

A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double-core structure is employed.For the spot-size converter,a buried ridge double-core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0.35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14.89°×18.18°,respectively,resulting in low-coupling losses with a cleaved optical fiber (3dB loss).

A novel 1.55μm laser diode with spot-size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double-core structure is employed.For the spot-size converter,a buried ridge double-core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0.35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14.89°×18.18°,respectively,resulting in low-coupling losses with a cleaved optical fiber (3dB loss).

于2010-11-23批量导入

zhangdi于2010-11-23 13:05:00导入数据到SEMI-IR的IR

Made available in DSpace on 2010-11-23T05:05:00Z (GMT). No. of bitstreams: 1 4548.pdf: 61056 bytes, checksum: a009716e182e88a33dff27aeb87659e6 (MD5) Previous issue date: 2005

国家自然科学基金重大研究计划,国家重点基础研究发展计划

National Research Center for Optoelectronic Technology，Institute of Semiconductors,Chinese Academy of Sciences

国家自然科学基金重大研究计划,国家重点基础研究发展计划