Influence of InAs deposition. thickness on the structural and optical properties of InAs quantum wires

The influence of InAs deposition thickness on the structural and optical properties of InAs/InAlAs quantum wires (QWR) superlattices (SLS) was studied. The transmission electron microscopy (TEM) results show that with increasing the InAs deposited thickness, the size uniformity and spatial ordering of InAs QWR SLS was greatly improved, but threading dislocations initiated from InAs nanowires for the sample with 6 monolayers (MLs) InAs deposition. In addition, the zig-zag features along the extending direction and lateral interlink of InAs nanowires were also observed. The InAs nanowires, especially for the first period, were laterally compact. These structural features may result in easy tunneling and coupling of charge carriers between InAs nanowires and will hamper their device applications to some extent. Some suggestions are put forward for further improving the uniformity of the stacked InAs QWRs, and for suppressing the formation of the threading dislocations in InAs QWR SLS.

Electronic structure of Mn-doped ZnO quantum wires: A mean-field theory study

Based on the effective-mass model and the mean-field approximation, we investigate the energy levels of the electron and hole states of the Mn-doped ZnO quantum wires (x=0.0018) in the presence of the external magnetic field. It is found that either twofold degenerated electron or fourfold degenerated hole states split in the field. The splitting energy is about 100 times larger than those of undoped cases. There is a dark exciton effect when the radius R is smaller than 16.6 nm, and it is independent of the effective doped Mn concentration. The lowest state transitions split into six Zeeman components in the magnetic field, four sigma(+/-) and two pi polarized Zeeman components, their splittings depend on the Mn-doped concentration, and the order of pi and sigma(+/-) polarized Zeeman components is reversed for thin quantum wires (R < 2.3 nm) due to the quantum confinement effect.

Depolarization blueshift in intersubband transitions of triangular quantum wires

Major State Basic Research Project 973 program of China 2006CB604907;National Science Foundation of China 60776015 60976008;863 High Technology R&D Program of China 2007AA03Z402

Electronic structure of ZnO wurtzite quantum wires

The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R >= 3 nm are studied in the framework of six-band effective-mass envelope function theory. The hole effective-mass parameters of ZnO wurtzite material are calculated by the empirical pseudopotential method. It is found that the electron states are either two-fold or four-fold degenerate. There is a dark exciton effect when the radius R of the ZnO quantum wires is in the range of [3,19.1] nm (dark range in our model). The dark ranges of other wurtzite semiconductor quantum wires are calculated for comparison. The dark range becomes smaller when the |Delta(so)| is larger, which also happens in the quantum-dot systems. The linear polarization factor of ZnO quantum wires is larger when the temperature is higher.

Optical properties of GaN wurtzite quantum wires

The electronic structure and optical properties of freestanding GaN wurtzite quantum wires are studied in the framework of six-band effective-mass envelope function theory. It is found that the electron states are either twofold or fourfold degenerate. There is a dark exciton effect when the radius R of GaN wurtzite quantum wires is in the range of [0.7, 10.9] nm. The linear polarization factors are calculated in three cases, the quantum confinement effect (finite long wire), the dielectric effect and both effects (infinitely long wire). It is found that the linear polarization factor of a finite long wire whose length is much less than the electromagnetic wavelength decreases as R increases, is very close to unity (0.979) at R = I nm, and changes from a positive value to a negative value around R = 4.1 nm. The linear polarization factor of the dielectric effect is 0.934, independent of radius, as long as the radius remains much less than the electromagnetic wavelength. The result for the two effects shows that the quantum confinement effect gives a correction to the dielectric effect result. It is found that the linear polarization factor of very long (treated approximately as infinitely long) quantum wires is in the range of [0.8, 1]. The linear polarization factors of the quantum confinement effect of CdSe wurtzite quantum wires are calculated for comparison. In the CdSe case, the linear polarization factor of R = I nm is 0.857, in agreement with the experimental results (Hu et al 2001 Science 292 2060). This value is much smaller than unity, unlike 0.979 in the GaN case, mainly due to the big spin-orbit splitting energy Delta(so) of CdSe material with wurtzite structure.

High uniformity of self-organized InAs quantum wires on InAlAs buffers grown on misoriented InP(001)

Highly uniform InAs quantum wires (QWRs) have been obtained on the In0.5Al0.5As buffer layer grown on the InP substrate 8 degrees off (001) towards (111) by molecular-beam epitaxy. The quasi-periodic composition modulation was spontaneously formed in the In0.5Al0.5As buffer layer on this misoriented InP (001). The width and period of the In-rich bands are about 10 and 40 nm, respectively. The periodic In-rich bands play a major role in the sequent InAs QWRs growth and the InAs QWRs are well positioned atop In-rich bands. The photoluminescence (PL) measurements showed a significant reduction in full width at half maximum and enhanced PL efficiency for InAs QWRs on misoriented InP(001) as compared to that on normal InP(001). (c) 2006 American Institute of Physics.

Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness

We report on the photoluminescence (PL) properties of InAs/InAlAs/InP quantum wires (QWRs) with various InAs deposited thickness. The PL linewidth of the QWRs decreases with increasing InAs deposited thickness due to the different thicknesses of the QWRs and defects in the samples. The defects and lateral composition modulation of the InAlAs layers play an important role in the temperature-dependent PL properties of the samples. (c) 2005 Elsevier B.V. All rights reserved.

Self-organized InAs quantum wires on GaAs (331)A substrates

Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7.9 nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.

Collective and single-particle excitations in coupled quantum wires in magnetic fields

The full spectra of magnetoplasmons and single-particle excitations are obtained of coupled one-dimensional electron gases in parallel semiconductor quantum wires with tunneling. We show the effects of the interwire Coulomb interaction and the tunneling, as well as the magnetic-field-induced localization on the elementary excitations in symmetric and asymmetric coulped quantum wire structures. The interacton and resonance between the plasmon and the intersubband single-particle excitations are found in magnetic fields.

Self-assembled quantum dots, wires and quantum-dot lasers

Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

Mechanisms for extra conductance plateaus in quantum wires

Spin-density-functional theory is employed to calculate the conductance G through a quasi-one-dimensional quantum wire. In addition to the usual subband quantization plateaus at G=n(2e(2)/h), we find additional structures at (n+1/2)(2e(2)/h). The extra structures appear whether or not the electrons in the wire spin polarize. However, only the spin-polarized case reproduces the experimental temperature and magnetic field dependences.

Self-assembled InAs quantum wires on InP(001)

Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As, In0.53Ga0.47As, and (In0.52Al0.48As)(n)/(In0.53Ga0.47As)(m)-short-period-lattice matrices on InP(001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x 4 direction in the 2 x 4 reconstructed (001) surface as revealed with reflection high-energy electron diffraction (RHEED). Alignment of quantum wires in different layers in the InAs/spacer multilayer structures depends on the composition of spacer layers. (C) 2000 Elsevier Science B.V. All rights reserved.

Metamorphosis of self-organized quantum dots into quantum wires

Spontaneous formation of InAs quantum wires in InAlAs on InP(001) via sequential chain-like coalescence of quantum dots along [1 (1) over bar 0] is realized. Theoretical calculations based on the energetics of interacting steps provide a qualitative explanation for the experimental results. Sequential coalescence of initially isolated dots reduces the total free energy strikingly. Thus the wire-like structure is energetically favorable. (C) 1998 Elsevier Science B.V.

Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires

Quantum-confined Stark effects are investigated theoretically in GaAs/AlxGa1-xAs quantum wires formed in V-grooved structures. The electronic structures of the V-shaped quantum wires are calculated within the effective mass envelope function theory in the presence of electric field. The binding energies of excitons are also studied by two-dimensional Fourier transformation and variational method. The blue Stark shifts are found when the electric field is applied in the growth direction. A possible mechanism in which the blueshifts of photoluminescence peaks are attributed to two factors, one factor comes from the asymmetric structure of quantum wire along the electric field and another factor arises from the electric-field-induced change of the Coulomb interaction. The numerical results are compared with the recent experiment measurement.