Electronic structure of ZnO wurtzite quantum wires


Autoria(s): Xia JB (Xia J. B.); Zhanga XW (Zhang X. W.)
Data(s)

2006

Resumo

The electronic structure and optical properties of ZnO wurtzite quantum wires with radius R >= 3 nm are studied in the framework of six-band effective-mass envelope function theory. The hole effective-mass parameters of ZnO wurtzite material are calculated by the empirical pseudopotential method. It is found that the electron states are either two-fold or four-fold degenerate. There is a dark exciton effect when the radius R of the ZnO quantum wires is in the range of [3,19.1] nm (dark range in our model). The dark ranges of other wurtzite semiconductor quantum wires are calculated for comparison. The dark range becomes smaller when the |Delta(so)| is larger, which also happens in the quantum-dot systems. The linear polarization factor of ZnO quantum wires is larger when the temperature is higher.

Identificador

http://ir.semi.ac.cn/handle/172111/10262

http://www.irgrid.ac.cn/handle/1471x/64324

Idioma(s)

英语

Fonte

Xia JB (Xia J. B.); Zhanga XW (Zhang X. W.) .Electronic structure of ZnO wurtzite quantum wires ,EUROPEAN PHYSICAL JOURNAL B,2006,49(4):415-420

Palavras-Chave #半导体物理 #LOW-TEMPERATURE GROWTH #BINDING-ENERGIES #NANOWIRE ARRAYS #PHOTOLUMINESCENCE #PHOTODETECTORS #SPECTROSCOPY #SAPPHIRE #CRYSTAL #GAN
Tipo

期刊论文