Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
| Data(s) |
2005
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| Resumo |
We report on the photoluminescence (PL) properties of InAs/InAlAs/InP quantum wires (QWRs) with various InAs deposited thickness. The PL linewidth of the QWRs decreases with increasing InAs deposited thickness due to the different thicknesses of the QWRs and defects in the samples. The defects and lateral composition modulation of the InAlAs layers play an important role in the temperature-dependent PL properties of the samples. (c) 2005 Elsevier B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Lei W; Chen YH; Wang YL; Huang XQ; Zhao C; Liu JQ; Xu B; Jin P; Zeng YP; Wang ZG .Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness ,JOURNAL OF CRYSTAL GROWTH,2005,286(1):23-27 |
| Palavras-Chave | #半导体材料 #defects #lateral composition modulation #photoluminescence #molecular beam epitaxy #quantum wires #semiconductor III-V material #DOTS #HETEROSTRUCTURES #INALAS/INP(001) #SPECTROSCOPY #WAVELENGTH #INP(001) |
| Tipo |
期刊论文 |
