Fabrication of 1.3 mu m Si-based MEMS tunable optical filter

In this paper we report the fabrication of 1.3 mum Si-based MEMS tunable optical filter, by surface micromaching. Through wet etching of polyimide sacrificial layer, a tunable Fabry-Perot filter was successfully fabricated. We make the capacitance measurement of the prototype device, compare the experimental curve with the theoretical one, and explain the difference between them.

Long-wavelength Si-based MQW photodetectors for application in optical fiber communication

Si-based SiGe/Si strained MQW long-wavelength photodetectors (PD) with cycle type (Ring Shape) waveguide (CWG) and resonant-cavity-enhanced (RCE) structure have been investigated for the first time for improving the quantum efficiency and response time. The results show that the responsivities are higher than that of conventional PD with a same Ge content reported previously. In addition, RCE-PD has an obvious narrow band response with FWHM less than 6nm.

Fabrication of silicon-on-reflector for Si-based resonant-cavity-enhanced photodetectors

A novel silicon-on-reflector substrate for Si-based resonant-cavity-enhanced photodetectors has been fabricated by using Si-based sol-gel and smart-cut techniques. The Si/SiO2 Bragg reflector is controlled in situ by electron beam evaporation and the thickness can be adjusted to get high reflectivity. The reflectance spectra of the silicon-on-reflector substrate with five pairs of Si/SiO2 reflector have been measured and simulated by transfer matrix model. The reflectivity at operating wavelength is close to 100%. Based on the silicon-on-reflector substrate, SiGe/Si multiple quantum wells resonant-cavity-enhanced photodetectors for 1.3 mu m wavelength have been designed and simulated. Ten-fold enhancement of the quantum efficiency of resonant-cavity-enhanced photodetectors compared with conventional photodetectors is predicted.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Si-based resonant-cavity-enhanced photodetector

Resonant-cavity-enhanced (RCE) photodetectors have been demonstrated to be able to improve the bandwidth-efficiency product. We report one top-illumination and one bottom-illumination SiGe/Si multiple quantum-well (MQW) RCE photodetectors fabricated on a separation-by-implanted-oxygen (SIMOX) wafer operating near 1300nm, The buried oxide layer in SIMOX is used as a mirror to form a vertical cavity with the silicon dioxide/silicon Bragg reflector deposited on the top surface. A peak responsivity with a reverse bias of 5V is measured 10.2mA/W at 1285nm, and a full-width at half maximum of 25nm for the top-illumination RCE photodetector, and 19mA/W at 1305nm, and a full-width at half maximum of 14nm for the bottom-illumination one. The external quantum efficiency of the bottom-illumination RCE photodetector is up to 2.9% at 1305nm with a reverse bias of 25V. The responsivity of the bottom-illumination RCE photodetector is improved by two-fold compared with that of the top-illumination one.

Si-based optoelectronic devices and their attractive applications

The semiconductor photonics and optoelectronics which have a great significance in the development of advanced high technology of information systems will be discussed in this paper. The emphasis will be put on the recent research carried out in our laboratory in enhanced luminescence from low dimensional materials such as SiGe/Si and Er-doped Si-rich SiO2/Si and Er-doped SixNy/Si. A ring shape waveguide structure, used to promote the effective absorption coefficient in PIN photodetector for 1.3 mu m wavelength and a resonant cavity enhanced structure, used to improve the quantum efficiency and response in heterostructure photo-transistor (HPT), are also proposed in this paper.

Cellulose acetate polymer film modified microstructured polymer optical fiber towards a nitrite optical probe

A novel microstructured polymer optical fiber (MPOF) probe for nitrites (NO(2)(-)) detection was made by forming rhodamine 6G (Rh 6G)-doped cellulose acetate (CA) on the side wall of array holes in a MPOF It was found that the MPOF probe only have a response to nitrites in a certain concentration of sulfuric acid solution The calibration graph of fluorescence intensity versus nitrites concentration was linear in the range of 2.0 x 10(-4) g/ml-5.0 x 10(-3) g/ml. The method possesses case of chemical modification, low cost design, and potential for direct integration with existing instrumentation, and has been applied to the determination of nitrites in real samples with satisfactory results. (C) 2010 Elsevier B.V. All rights reserved

Pattern formation in a confined polymer film induced by a temperature gradient

We have studied a morphological instability of a double layer comprising the polymer film and air gap confined between the two plates set to different temperatures. The temperature gradient across the double layer causes the breakup of the polymer film into well-defined columnar, striped or spiral structures spanning the two plates. The pattern formation mechanisms have been discussed. The formed patterns can be transferred to produce PDMS stamp, a key element of soft lithography for future microfabrication.

Ordered droplet formation by thin polymer film dewetting on a stripe-patterned substrate

The dewetting process of thin polystyrene (PS) film on flat and stripe-patterned substrates is presented. Different dewetting processes were observed when the thin PS films annealed at above the glass transition temperature on these different kinds of substrates. The final dewetting on the flat substrate led to formation of polygonal liquid droplets, while on the stripe-patterned substrate, the droplets were observed to align at the centers of the stripes. A possible explanation for the dewetting process on the stripe-patterned substrate is proposed.

A composite polymer film with both superhydrophobicity and superoleophilicity

A composite film composed of porous polyurethane (PU) and polystyrene (PS) microspheres with both superhydrophobicity and superoleophilicity has been prepared. In this film, the dual-scale structure enhances both the hydrophobicity and oleophilicity of the surface material. The composite film with such an 'intelligent' wettability property can be utilized to separate oil and water systems efficiently.

Plasticizer effect on the ionic conductivity of PEO-based polymer electrolyte

The effects of plasticizer ethylene carbonate (EC) on the AC impedance spectra and the ionic conductivity are reported. With increasing of EC concentration the semicircle in high frequency disappears, and the slope of the straight line in low frequency decreases. The data obtained from impedance experiments can be explained using an equivalent circuit proposed. On the other hand, the room temperature conductivity increases with EC concentration because of the increase of the segmental flexibility of PEO. For lower EC concentration samples, the temperature dependence of conductivity in low temperature range follows Arrhenius type, but when EC concentration is larger than 20%, the temperature dependence of conductivity obeys the Vogel-Tamman-Fulcher (VTF) equation in all temperature ranges.

ELECTROACTIVE COATINGS OF DICYANO-BIS(1,10-PHENANTHROLINE)IRON(II) ATTACHED TO NAFION POLYMER FILM-MODIFIED ELECTRODES VIA ADSORPTION

A dicyano-bis(1,10-phenanthroline)iron(II) modified elecrode was prepared. The voltammetric and the spectroelectrochemical behavior of this electrode were investigated. The influence of pH and the amount of Nafion and dicyano-bis(1,10-phenanthroline) iron(II) (DBPI) used in the electrode preparation on the electrochemical behavior is presented.

STUDY ON MASS-TRANSPORT IN EASTMAN-AQ POLYMER FILM BY USING NON-STEADY-STATE CHRONOAMPEROMETRY AT AN ULTRAMICRODISK ELECTRODE

Non-steady-state chronoamperometry of ultramicroelectrodes is a powerful method for the study of mass transport in polymer films. This method has many advantages over the conventional methods at a macroelectrode and the steady state method at an ultramicroelectrode, which yield the most information. The apparent diffusion coefficient, D(app), and the concentration of reactant in the film, c(f), can be determined from a single experiment without knowing the thickness of the film. We studied the transport of several species such as Ru(NH3)63+, Ru(bpy)3(2+), NR and MV2+ in Eastman-AQ polymer film coated ultramicroelectrodes by using this method.

Ionophore Based Bismuth Film Electrode for Lead

A Nafion/ionophore, 4-tert-butylcalix[4]arene-tetrakis(N,N-dimethylthioacetamide) composite coated and bismuth film modified glassy carbon electrode. (GC/NA-IONO/BiFE) was described to determine trace lead sensitively and selectively. The characteristics of such modified GC/NA-IONO/BiFE were studied by scanning electron microscopy and cyclic voltammetry. The influence of various experimental parameters upon the stripping lead signal at the GC/NA-IONO/BiFE was explored. Under the optimized conditions, the differential pulse voltammetric stripping response is highly linear over the 0.1-8.0 nM lead range examined (180s preconcentration at -1.2V), with a detection limit of 0.044nM and good precision (RSD=5.4% at 0.5nM). Also applicability to seawater samples was demonstrated at such modified electrode. The high selectivity of ionophore coupled with the excellent electrochemical characteristics of bismuth endow the GC/NA-IONO/BiFE a promising and robust tool for monitoring of trace lead rapidly and precisely.

Fast imaging of an atmospheric pressure glow discharge in he with a polymer film

To visualize the development of an atmospheric pressure glow discharge in He and the influence of polymer film on the discharge, short exposure time images were recorded using a gated intensified charge coupled detector. If the polymer film is stretched in the middle of the gap, a discharge region on each side of the polymer is created with the characteristic structure of a glow discharge. In this case, strongly asymmetric discharge current pulses can be generated depending on the frequency and the applied voltage.