981 resultados para Semiconductor quantum dots


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The time-resolved photoluminescence and steady photoluminescence (TRPL and PL) spectra on self-assembled InAs/GaAs quantum dots (QDs) are investigated. By depositing GaAs/InAs short period superlattices (SLs), 1. 48 μtm emission is obtained at room temperature. Temperature dependent PL measurements show that the PL intensity of the emission is very steady. It decays only to half as the temperature increases from 15 K to room temperature, while at the same time, the intensity of the other emission decreases by a factor of 5 orders of magnitude. These two emissions are attributed to large-size QDs and short period superlattices (SLs), respectively. Large-size QDs are easier to capture and confine carriers,which benefits the lifetime of PL, and therefore makes the emission intensity insensitive to the temperature.

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Self-organized In_(0.5)Ga_(0.5)As/GaAs quantum island structure emitting at 1. 35 (im at room temperature has been successfully fabricated by molecular beam epitaxy (MBE) via cycled (InAs)_1/( GaAs)_1 monolayer deposition method. Photoluminescence (PL) measurement shows that very narrow PL linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In_(0.5)Ga_(0.5)As islands structure. Our results provide important information for optimizing the epitaxial structures of 1.3 μm wavelength quantum dot (QD) devices.

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The size and shape Evolution of self-assembled InAs quantum dots (QDs) influenced by 2.0-ML InAs seed layer has been systematically investigated for 2.0, 2.5, and 2.9-ML deposition on GaAs(1 0 0) substrate. Based on comparisons with the evolution of InAs islands on single layer samples at late growth stage, the bimodal size distribution of InAs islands at 2.5-ML InAs coverage and the formation of larger InAs quantum dots at 2.9-ML deposition have been observed on the second InAs layer. The further cross-sectional transmission electron microscopy measurement indicates the larger InAs QDs: at 2.9-ML deposition on the second layer are free of dislocation. In addition, the interpretations for the size and shape evolution of InAs/GaAs QDs on the second layer will be presented. (C) 2001 Elsevier Science B.V. All lights reserved.

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Red shifts of emission wavelength of self-organized In(Cla)As/GaAs quantum dots (QDs) covered by 3 nm thick InxGa1-xAs layer with three different In mole fractions (x = 0.1, 0.2 and 0.3, respectively) have been observed. Transmission electron microscopy images demonstrate that the stress along growth direction in the InAs dots was reduced due to introducing the InxGa1-xAs (x = 0.1, 0.2 and 0.3) covering layer instead of GaAs layer. Atomic force microscopy pictures show a smoother surface of InAs islands covered by an In0.2Ga0.8As layer. It is explained by the calculations that the redshifts of the photoluminescence (PL) spectra from the QDs covered by the InxGa1-xAs (x greater than or equal to 0.1) layers were mainly due to the reducing of the strain other than the InAs/GaAs intermixing in the InAs QDs. The temperature dependent PL spectra further confirm that the InGaAs covering layer can effectively suppress the temperature sensitivity of PL emissions. 1.3 mum emission wavelength with a very narrow linewidth of 19.2 mcV at room temperature has been obtained successfully from In,In0.5Ga0.5As/GaAs self-assembled QDs covered by a 3-nm In0.2Ga0.2As strain reducing layer. (C) 2001 Elsevier Science B.V. All rights reserved.

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Molecular beam epitaxy-grown self-assembled In(Ga)As/GaAs and InAs/InAlAs/InP quantum dots (QDs) and quantum wires (QWRs) have been studied. By adjusting growth conditions, surprising alignment. preferential elongation, and pronounced sequential coalescence of dots and wires under specific condition are realized. The lateral ordering of QDs and the vertical anti-correlation of QWRs are theoretically discussed. Room-temperature (RT) continuous-wave (CW) lasing at the wavelength of 960 nm with output power of 3.6 W from both uncoated facets is achieved fi-om vertical coupled InAs/GaAs QDs ensemble. The RT threshold current density is 218 A/cm(2). A RT CW output power of 0.6 W/facet ensures at least 3570 h lasing (only drops 0.83 dB). (C) 2001 Elsevier Science B.V, All rights reserved.

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The unique surface-sensitive properties make quantum dots (QDs) great potential in the development of sensors for various analytes. However, quantum dots are not only sensitive to a certain analyte, but also to the surrounding conditions. The controlled response to analyte may be the first step in the designing of functional quantum dots sensors. In this study, taking the quenching effect of benzoquinone (BQ) on CdTe QDs as model, several critical parameters of buffer solution conditions with potential effect on the sensors were investigated. The pH value and the concentration of sodium citrate in the buffer solution critically influenced the quenching effects of BQ.

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A simple and sensitive assay system for glucose based on the glutathione (GSH)-capped CdTe quantum dots (QDs) was developed. GSH-capped CdTe QDs exhibit higher sensitivity to H2O2 produced from the glucose oxidase catalyzed oxidation Of glucose, and are also more biocompatible than other thiols-capped QDs. Based on the quenching of H2O2 on GSH-capped QDs, glucose can be detected. The detection conditions containing reaction time, the concentration of glucose oxidase and the sizes of QDs were optimized and the detection limits for glucose was determined to be 0.1 mu M; two detection ranges of glucose from 1.0 mu M to 0.5 mM and from 1.0 mM to 20 mM, respectively Were obtained. The detection limit was almost a 1000 times lower than other QDs-based optical glucose sensing systems. The developed glucose detection system was simple and facile with no need of complicated enzyme immobilization and modification of QDs.

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Practical realisation of quantum information science is a challenge being addressed by researchers employing various technologies. One of them is based on quantum dots (QD), usually referred to as artificial atoms. Being capable to emit single and polarization entangled photons, they are attractive as sources of quantum bits (qubits) which can be relatively easily integrated into photonic circuits using conventional semiconductor technologies. However, the dominant self-assembled QD systems suffer from asymmetry related problems which modify the energetic structure. The main issue is the degeneracy lifting (the fine-structure splitting, FSS) of an optically allowed neutral exciton state which participates in a polarization-entanglement realisation scheme. The FSS complicates polarization-entanglement detection unless a particular FSS manipulation technique is utilized to reduce it to vanishing values, or a careful selection of intrinsically good candidates from the vast number of QDs is carried out, preventing the possibility of constructing vast arrays of emitters on the same sample. In this work, site-controlled InGaAs QDs grown on (111)B oriented GaAs substrates prepatterned with 7.5 μm pitch tetrahedrons were studied in order to overcome QD asymmetry related problems. By exploiting an intrinsically high rotational symmetry, pyramidal QDs were shown as polarization-entangled photon sources emitting photons with the fidelity of the expected maximally entangled state as high as 0.721. It is the first site-controlled QD system of entangled photon emitters. Moreover, the density of such emitters was found to be as high as 15% in some areas: the density much higher than in any other QD system. The associated physical phenomena (e.g., carrier dynamic, QD energetic structure) were studied, as well, by different techniques: photon correlation spectroscopy, polarization-resolved microphotoluminescence and magneto-photoluminescence.

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A facile sonochemical method has been developed to prepare very small zinc sulfide nanoparticles (ZnS NPs) of extremely small size about 1. nm in diameter using a set of ionic liquids based on the bis (trifluoromethylsulfonyl) imide anion and different cations of 1-alkyl-3-methyl-imidazolium. The structural features and optical properties of the NPs were determined in depth with X-ray powder diffraction (XRD), transmission electron microscopy (TEM), high-resolution TEM (HRTEM), Fourier transform infrared (FTIR) spectroscopy, dynamic light scattering (DLS) analysis, and UV-vis absorption spectroscopy. The energy band gap measurements of ZnS NPs were calculated by UV-vis absorption spectroscopy. One of the interesting features of the present work is that the wide band gap semiconductor ZnS nanocrystals were prepared which are used in the fabrication of photonic devices.

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Recent advances in the application of semiconductor nanocrystals, or quantum dots, as biochemical sensors are reviewed. Quantum dots have unique optical properties that make them promising alternatives to traditional dyes in many luminescence based bioanalytical techniques. An overview of the more relevant progresses in the application of quantum dots as biochemical probes is addressed. Special focus will be given to configurations where the sensing dots are incorporated in solid membranes and immobilized in optical fibers or planar waveguide platforms.

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We introduce semiconductor quantum dot-based fluorescence imaging with approximately 2-fold increased optical resolution in three dimensions as a method that allows both studying cellular structures and spatial organization of biomolecules in membranes and subcellular organelles. Target biomolecules are labelled with quantum dots via immunocytochemistry. The resolution enhancement is achieved by three-photon absorption of quantum dots and subsequent fluorescence emission from a higher-order excitonic state. Different from conventional multiphoton microscopy, this approach can be realized on any confocal microscope without the need for pulsed excitation light. We demonstrate quantum dot triexciton imaging (QDTI) of the microtubule network of U373 cells, 3D imaging of TNF receptor 2 on the plasma membrane of HeLa cells, and multicolor 3D imaging of mitochondrial cytochrome c oxidase and actin in COS-7 cells.

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Der light harvesting complex II (LHCII) ist ein pflanzliches Membranprotein, das in seiner trimeren Form über 40 Chlorophylle bindet. In der Pflanze kann er besonders effizient Licht sammeln und die Anregungsenergie anschließend fast verlustfrei über andere chlorophyll-bindende Proteine an die Reaktionszentren weiterleiten. Aufgrund dieser besonderen Eigenschaften war es ein Ziel dieser Arbeit, rekombinanten LHCII mit synthetischen Komponenten zu kombinieren, die zur Ladungstrennung befähigt sind. Zu diesem Zweck wurden unter anderem Halbleiternanokristalle (Quantum Dots, QDs) ausgewählt, die je nach Zusammensetzung sowohl als Energieakzeptoren als auch als Energiedonoren in Frage kamen. Durch Optimierung des Puffers gelang es, die Fluoreszenzquantenausbeute der QDs in wässriger Lösung zu erhöhen und zu stabilisieren, so dass die Grundvoraussetzungen für die spektroskopische Untersuchung verschiedener LHCII-QD-Hybridkomplexe erfüllt waren.rnUnter Verwendung bereits etablierter Affinitätssequenzen zur Bindung des LHCII an die QDs konnte gezeigt werden, dass die in dieser Arbeit verwendeten Typ-I QDs aus CdSe und ZnS sich kaum als Energie-Donoren für den LHCII eignen. Ein Hauptgrund lag im vergleichsweise kleinen Försterradius R0 von 4,1 nm. Im Gegensatz dazu wurde ein R0 von 6,4 nm für den LHCII als Donor und Typ-II QDs aus CdTe, CdSe und ZnS als Akzeptor errechnet, wodurch in diesem System eine höhere Effizienz des Energietransfers zu erwarten war. Fluoreszenzspektroskopische Untersuchungen von Hybridkomplexen aus LHCII und Typ-II QDs ergaben eine hohe Plausibilität für einen Fluoreszenz Resonanz Energietransfer (FRET) vom Lichtsammler auf die QDs. Weitere QD-Affinitätssequenzen für den LHCII wurden identifiziert und deren Bindekonstanten ermittelt. Versuche mit dem Elektronenakzeptor Methylviologen lieferten gute Hinweise auf eine LHCII-sensibilisierte Ladungstrennung der Typ-II QDs, auch wenn dies noch anhand alternativer Messmethoden wie z.B. durch transiente Absorptionsspektroskopie bestätigt werden muss. rnEin weiteres Ziel war die Verwendung von LHCII als Lichtsammler in dye-sensitized solar cells (DSSC). Geeignete dotierte TiO2-Platten wurden ermittelt, das Verfahren zur Belegung der Platten optimiert und daher mit wenig Aufwand eine hohe LHCII-Belegungsdichte erzielt. Erste Messungen von Aktionsspektren mit LHCII und einem zur Ladungstrennung fähigen Rylenfarbstoff zeigen eine, wenn auch geringe, LHCII sensibilisierte Ladungstrennung. rnDie Verwendung von Lanthanide-Binding-Tags (LBTs) ist ein potentielles Verfahren zur in vivo-Markierung von Proteinen mit Lanthanoiden wie Europium und Terbium. Diese Metalle besitzen eine überdurchschnittlich lange Lumineszenzlebensdauer, so dass sie leicht von anderen fluoreszierenden Molekülen unterschieden werden können. Im Rahmen der vorliegenden Arbeit gelang es, eine LBT in rekombinanten LHCII einzubauen und einen Lumineszenz Resonanz Energietransfer (LRET) vom Europium auf den LHCII nachzuweisen.rn

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The power of advanced transmission electron microscopy in determining the nanostructures and chemistry of nanosized materials on the applications in semiconductor quantum structures was demonstrated.

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Thesis (Ph.D.)--University of Washington, 2016-06

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We present transport measurements on a system of two lateral quantum dots in a perpendicular magnetic field. Due to edge channel formation in an open conducting region, the quantum dots are chirally coupled. When both quantum dots are tuned into the Kondo regime simultaneously, we observe a change in the temperature dependence of the differential conductance. This is explained by the RKKY exchange interaction between the two dots. As a function of bias the differential conductance shows a splitting of the Kondo resonance which changes in the presence of RKKY interaction.