Comparison of uniform amplitude beam and intercepted Gaussian beam superresolution theories

The general superresolution theories for uniform amplitude beams and intercepted Gaussian beams are investigated. For these two types of incident beam, both two-zone amplitude and pure-phase filters are adopted to provide specific numerical descriptions of their differences in superresolution performances. Simulated results of comparisons between their performances indicate that, with the same spot size ratio, the intercepted Gaussian beam achieves a higher central image brightness ratio and significantly lower side-lobe effect irrespective of the filter used. (c) 2008 Elsevier Ltd. All rights reserved.

激光束质量实时测量技术

提出一种新型光束质量实时测量技术, 该技术主要基于由平板反射镜组成的多平面成像系统, 一次性将激光束腰附近2倍瑞利距离内的多个光斑成像在同一个平面上, 用CCD相机获取这些光斑的光强分布图样。通过图像处理获知接收到的光斑的光强分布。采用远场发散角、焦点尺寸、桶中功率比和M2因子四种光束质量评价标准对激光光束质量进行评价。利用该方法实时测量了高能钕玻璃双板条激光器的输出光束。

Dynamic analysis of V-folded cavity for TEM00 operation of end-pumped solid-state laser

Based on graphic analysis design method of optical resonator, a simple design expression of V-folded cavity of end-pumped solid-state lasers with TEM00 operation is described, which satisfies two criterias of the resonator design. We give numerical simulation of spot size as a function of thermal focal length using this design approach whose advantages are validated experimentally.

Far-field intensity distribution of beam generated by Gaussian mirror resonator

Based on scalar diffraction theory, we investigated far-field intensity distribution (FFID) of beam generated by Gaussian mirror resonator. We found usable analytical expressions of diffracted field with respect to variation of diffraction parameters. Particular attention was paid to the parameters such as mirror spot size and radius of the Gaussian mirror, which determine the FFID. All analyses were limited to TEM00 fundamental mode. (c) 2004 Elsevier B.V. All rights reserved.

Far-field intensity distribution, M-2 factor of beams generated by Gaussian mirror resonator

We investigated M-2 factor and far-field distribution of beams generated by Gaussian mirror resonator. And we found usable analytical expressions of the M2 factor and the far-field distribution intensity with respect to variation of diffraction parameters. Particular attention was paid to the parameters such as mirror spot size and reflectance of the Gaussian mirror. (c) 2006 Elsevier GrnbH. All rights reserved.

Produção de IL-1β, IL-6 e IL-8 por fibroblastos estimulados por cimentos endodônticos e submetidos à terapia laser de baixa potência

O sucesso do tratamento endodôntico depende da cuidadosa realização de todas as suas fases, terminando com uma obturação tridimensional que alcance todo o sistema de canais radiculares. Desta forma, os materiais obturadores, ou as substâncias liberadas, entrarão em contato com os tecidos perirradiculares, o que poderá influenciar a resposta inflamatória e o processo de reparo. A terapia laser de baixa potência (TLBP) tem sido estudada quanto à sua ação anti-inflamatória, favorecendo o reparo. O objetivo deste estudo foi investigar a produção das citocinas IL-1β, IL-6 e IL-8 por fibroblastos de gengiva humana (linhagem FMM1) como resposta à presença dos extratos dos cimentos endodônticos AH Plus, MTA Fillapex e EndoSequence BC Sealer, bem como a eficácia da TLBP, neste modelo. Para isto, extratos destes cimentos, recém-manipulados e após 24 h do endurecimento, foram preparados em meio de cultura DMEM fresco, conforme as normas ISO 10993-12. Inicialmente, a citotoxicidade dos cimentos foi avaliada, após a interação das células com a diluição seriada destes extratos (1:1 a 1:16), por meio do ensaio MTT. Para a análise da produção de citocinas, 106 células por poço foram cultivadas em placas de cultura de 24 poços, para a interação com os extratos dos cimentos, na diluição 1:4. Estabeleceram-se os grupos não irradiado e irradiado. No grupo irradiado, as culturas celulares receberam duas irradiações do laser InGaAlP (660 nm, 30 mW, 5 J/cm2 e área do feixe de 0,028 cm2), com intervalo de 12 h. O grupo não irradiado foi submetido às mesmas condições ambientais que o irradiado. Os sobrenadantes das culturas foram coletados, centrifugados, aliquotados e armazenados congelados, para a posterior análise pelo ensaio de ELISA. Todos os dados obtidos (médias erro padrão) foram tratados estatisticamente por ANOVA one-way, complementado pelo teste de Tuckey e ANOVA two-way, com correção de Bonferroni (p< 0,05). A citotoxicidade dos cimentos AH Plus e EndoSequence BC Sealer revelou-se tempo/concentração-dependente, enquanto a do MTA Fillapex mostrou-se concentração-dependente. Os cimentos endodônticos induziram a produção das citocinas IL-1β, IL-6 e IL-8 pelos fibroblastos, sem diferença significativa com os controles (p> 0,05). Somente o LPS de E. coli induziu a secreção de IL-8, com diferença estatística (p< 0,05). A TLBP não foi capaz de modular a produção das citocinas em questão, significativamente.

Negative index photonic crystal lenses based on carbon nanotube arrays

We report a novel utilization of periodic arrays of carbon nanotubes in the realization of diffractive photonic crystal lenses. Carbon nanotube arrays with nanoscale dimensions (lattice constant 400 nm and tube radius 50 nm) displayed a negative refractive index in the optical regime where the wavelength is of the order of array spacing. A detailed computational analysis of band gaps and optical transmission through the nanotubes based planar, convex and concave shaped lenses was performed. Due to the negative-index these lenses behaved in an opposite fashion compared to their conventional counter parts. A plano-concave lens was established and numerically tested, displaying ultra-small focal length of 1.5 μm (∼2.3 λ) and a near diffraction-limited spot size of 400 nm (∼0.61 λ). © 2012 Elsevier B.V. All rights reserved.

Plasmonic nanofocusing of light in an integrated silicon photonics platform.

The capability to focus electromagnetic energy at the nanoscale plays an important role in nanoscinece and nanotechnology. It allows enhancing light matter interactions at the nanoscale with applications related to nonlinear optics, light emission and light detection. It may also be used for enhancing resolution in microscopy, lithography and optical storage systems. Hereby we propose and experimentally demonstrate the nanoscale focusing of surface plasmons by constructing an integrated plasmonic/photonic on chip nanofocusing device in silicon platform. The device was tested directly by measuring the optical intensity along it using a near-field microscope. We found an order of magnitude enhancement of the intensity at the tip's apex. The spot size is estimated to be 50 nm. The demonstrated device may be used as a building block for "lab on a chip" systems and for enhancing light matter interactions at the apex of the tip.

Rearrangeable nonblocking SOI waveguide thermooptic 4x4 switch matrix with low insertion loss and fast response

A rearrangeable nonblocking 4 x 4 thermooptic silicon-on-insulator waveguide switch matrix at 1.55-mu m integrated spot size converters is designed and fabricated for the first time. The insertion losses and polarization-dependent losses of the four channels are less than 10 and 0.8 dB, respectively. The extinction ratios are larger than 20 dB. The response times are 4.6 mu s for rising edge and 1.9 mu s for failing edge.

A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response

A silicon-on-insulator-based thermo-optic waveguide switch integrated with spot size converters is designed and fabricated by inductively coupled plasma reactive ion etching. The device shows good characteristics, including low, insertion loss of 8 +/- 1 dB for wavelength 1530-1580 nm and fast response times of 4.6 As for rising edge and 1.9 mu s for failing edge. The extinction ratios of the two channels are 19.1 and 18 dB, respectively.

SOI-based 16x16 thermo-optic waveguide switch matrix

A 16 x 16 thermo-optic wavelenght switch matrix has been designed and febricated on silicon-on-insulator wafer. For reducing device lenght, blocking switch matrix configuration is chosen. The building block of a matix is a 2 x 2 cell with Mach-Zehnder interferometer configuration, where a multi-mode interferometer serves as splitters/combiners. Spot size converters and isolating grooves are integrated on the same chip to reduce loss and power consumption. Average power consumption of the switch cell is 220 mW. The switching time of a switch cell is less than 3 mu s.

Detect the sub-wavelength data by applying a very-small-aperture laser

We present a theoretical and experimental research about applying a very-small-aperture laser (VSAL) to detect sub-wavelength data. Near-field distribution of a VSAL, which is essential for the application of such near-field devices, will be affected by the sample or fiber posited in the near-field region of the aperture. When the device is applied to detect the sub-wavelength data, the real resolution depends on the near-field spot size, the divergent angle of the beam and the distance from the aperture to the sample. Experimental results, including the near-field detection of the spot and detection of the sub-wavelength data by using the VSAL, are presented in this paper. We realize the two dimensional scanning about the sub-wavelength data (with the width 600 nm) by employing a VSAL with a 300 nm x 300 nm aperture.

Near-field scanning optical microscopy with an active probe

A near-field scanning optical microscopy (NSOM) system employing a very-small-aperture laser (VSAL) as an active probe is reported in this Letter. The VSAL in our experiment has an aperture size of 300 nmx300 nm and a near-field spot size of about 600 nm. The resolution of the NSOM system with the VSAL can reach about 600 nm, and even 400 nm. Considering the high output power of the VSAL, such a NSOM system is a potentially useful tool for nanodetection, data storage, nanolithography, and nanobiology.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.