A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response
Data(s) |
2005
|
---|---|
Resumo |
A silicon-on-insulator-based thermo-optic waveguide switch integrated with spot size converters is designed and fabricated by inductively coupled plasma reactive ion etching. The device shows good characteristics, including low, insertion loss of 8 +/- 1 dB for wavelength 1530-1580 nm and fast response times of 4.6 As for rising edge and 1.9 mu s for failing edge. The extinction ratios of the two channels are 19.1 and 18 dB, respectively. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Li, YP; Yu, JZ; Chen, SW .A silicon-on-insulator-based thermo-optic waveguide switch with low insertion loss and fast response ,CHINESE PHYSICS LETTERS,JUN 2005,22 (6):1449-1451 |
Palavras-Chave | #光电子学 #LOW-POWER CONSUMPTION |
Tipo |
期刊论文 |