A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

A new idea of power device, which contains highly nitrogen-doped CVD diamond and Schottky contact, is proposed to actualise a power device with diamond. Two-dimensional simulation is conducted using ISE TCAD device simulator. While comparably high current is obtained in a transient simulation as expected, this current does not contribute to the drain-source current because of the symmetry of the device. Using an asymmetric structure or bias conditions, the device has high potential as an electric device for extremely high power, high frequency and high temperature. © 2003 Elsevier Science B.V. All rights reserved.

Effect of liquid nitrogen freezing and subsequent storage on survival of Staphylococcus aureus and Streptococcus pyogenes in treated prawn meat

Prawn meat treated with Streptococcus pyogenes B-49-2 culture and Staphylococcus aureus ATCC-12598 culture were frozen in conventional plate freezer at -40°C and by spray type liquid nitrogen freezer. The frozen products were stored at -18°C. Streptococcus pyogenes B-49-2 showed low sensitivity to cold injury during freezing and frozen storage. Staphylococcus aureus ATCC-12598 survived during the entire storage period of 240 days. Total bacterial count of untreated prawn meat was found to be always lesser in liquid nitrogen frozen products than that in plate frozen products.

Effect on nitrogen acceptor as Mg is alloyed into ZnO

Our Raman measurement indicates that the intensity of the peaks (510 and 645 cm(-1)) related to nitrogen concentration is enhanced in MgZnO compared with that in ZnO. Using first-principles band structure methods, we calculated the formation energy and transition energy level for nitrogen acceptor in ZnO and random MgxZn1-xO (with x=0.25) alloy. Our calculations show that the incorporation of nitrogen can be enhanced as Mg is alloyed into ZnO, which agrees with our experiments. The acceptor energy level deeper in the alloy ascribes to the downward shift of the valence-band maximum edge in the presence of magnesium. (c) 2008 American Institute of Physics.